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Sangya R Jain

from Bridgewater, NJ
Age ~70
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Also known as:
Fangya Jain, Sansy Jain, Sa Jan, Jan Sa, A Jain
Phone and address:
891 Ardsley Ln, Bridgewater, NJ 08807
(908) 231-6790
Related to:
Ajay K Jain, 63Epri JainPd JainRahul Jain, 44Rahul JainA JainAshok Jain, 74A Jain, 61Rajiv Jain, 61R JainJan AshSuraj JainRanjana Jain, 71Gian C JainS JainAnish Nys Jain
Connected to:
Aashish Jain, 36Abhi Jain, 28Achint Jain, 41Advait Jain, 39Ajay K Jain, 56Akash Jain, 48Akinchan Jain, 47Akshat K Jain, 53Akshi Jain, 33Alekh Jain, 41

Sangya Jain Phones & Addresses

  • 891 Ardsley Ln, Bridgewater, NJ 08807 (908) 231-6790 (908) 253-8909
  • New York, NY
  • Arlington, VA
  • Hillsborough, NJ
  • Flemington, NJ
  • Somerset, NJ

Resumes

Resumes

Sangya Jain Photo 1

Accademia Costume E Moda

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Location:
New York, NY
Industry:
Textiles
Work:
Safe Earth Jul 2016 - Jun 2017
Textile Designer
Crimsoune Club Jul 2015 - Jun 2016
Textile Designer
Niift Co., Ltd 2011 - 2015
Textile Designer
Abhis International Dec 2013 - Mar 2014
Accessories Designer-Industrial Training
Ncdpd 2013 - 2014
Ncdpd
Education:
Northern Indian Instittue Fashion Technology 2011 - 2015
Bachelors P.k.r. Jain Public School, Ambala City 2009 - 2011
Skills:
Accessories
Printmaking
Cad
Photoshop Rendering
Logo Designing
Fashion Jewelry
Textiles
Microsoft Office
Home Improvement
Handicraft
Packaging
Interests:
Arts and Culture
Languages:
English
Hindi
Sangya Jain Photo 2

Sangya Jain

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Location:
New York, NY
Industry:
Law Practice
Work:
AZ Electronic Materials - Somerville, NJ since Jul 2011
Global Manager of Intellectual Property Department
AZ Electronic Materials previously Clariant Corp previously Hoechst-Celanese Corp Mar 1991 - Sep 2011
Senior Patent Agent
AZ Electronic Materials 1988 - 1991
Group Leader Product Development
AZ Electronic Materials 1982 - 1988
Senior Research Chemist
RCA Corp Sep 1978 - Feb 1982
Scientist
Education:
Rutgers, The State University of New Jersey-New Brunswick 1982 - 1987
MS, Chemistry King's College London, U. of London 1975 - 1976
PGEducation, Education Imperial College London 1972 - 1975
BSc, Chemistry First Class Honors
Skills:
Coatings
Semiconductors
Lithography
Patents
Intellectual Property
Electronic Materials
Chemistry
R&D
Patent Prosecution
Materials Science
Patent Preparation
Prosecution
Organic Chemistry
Electronics
Characterization
Product Development
Materials
Spectroscopy
Polymers
Languages:
French
German
Certifications:
Patent Agent Usa
Uspto
Sangya Jain Photo 3

Sangya Jain

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Publications

Us Patents

Image Reversal Negative Working O-Quinone Diazide And Cross-Linking Compound Containing Photoresist Process With Thermal Curing Treatment And Element Produced Therefrom

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US Patent:
52178404, Jun 8, 1993
Filed:
May 25, 1990
Appl. No.:
7/530545
Inventors:
Mark A. Spak - Edison NJ
Donald Mammato - Lebanon NJ
Dana Durham - East Greenwich RI
Sangya Jain - Bridgewater NJ
Assignee:
Hoechst Celanese Corporation - Somerville NJ
International Classification:
G03F 7023
G03F 709
G03F 730
G03F 738
US Classification:
430165
Abstract:
A process for converting a normally positive working photosensitive composition to a negative working composition. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image.

Postive Working Multi-Level Photoresist

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US Patent:
48638277, Sep 5, 1989
Filed:
Oct 20, 1986
Appl. No.:
6/921291
Inventors:
Sangya Jain - Bridgewater NJ
Assignee:
American Hoechst Corporation - Somerville NJ
International Classification:
G03F 726
US Classification:
430145
Abstract:
A process for forming a multi-level positive working photosensitive element. One forms a composition containing an alkali soluble resin, an o-quinonediazide compound and an in-situ generated acid catalyzed crosslinker in a solvent mixture. After coating on a substrate, drying and partially cross-linking the first layer, a second positive working light sensitive layer is applied. Each light sensitive layer is activated by u. v. radiation in different parts of the spectrum. The top layer is imagewise exposed and developed to form a mask. The second layer is flood exposed through this mask and developed. Each development is conducted with an aqueous alkaline solution.

Image Reversal Negative Working O-Quinone Diazide And Cross-Linking Compound Containing Photoresist Process With Thermal Curing Treatment

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US Patent:
49313819, Jun 5, 1990
Filed:
Nov 8, 1988
Appl. No.:
7/268640
Inventors:
Mark A. Spak - Edison NJ
Donald Mammato - Lebanon NJ
Dana Durham - Bloomsbury NJ
Sangya Jain - Somerville NJ
Assignee:
Hoechst Celanese Corporation - Somerville NJ
International Classification:
G03F 726
US Classification:
430325
Abstract:
A process for converting a normally positive working photosensitive composition to a negative working composition. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image.

Method Of Producing An Image Reversal Negative Photoresist Having A Photo-Labile Blocked Imide

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US Patent:
50194887, May 28, 1991
Filed:
Apr 24, 1990
Appl. No.:
7/517530
Inventors:
Donald C. Mammato - Lebanon NJ
Sangya Jain - Bridgewater NJ
Dana Durham - East Greenwich RI
Mark A. Spak - Edison NJ
Douglas A. Usifer - Belle Mead NJ
Michael McFarland - Washington NJ
Assignee:
Hoechst Celanese Corporation - Somerville NJ
International Classification:
G03C 516
G03F 740
G03F 7022
G03F 7039
US Classification:
430325
Abstract:
A method for producing a negative image by coating a substrate with a photosensitive layer containing a blocked hydrophobic polymer capable of deblocking in the presence of an acid, and an oxime sulfonate ester or o-quinone-4-sulfonyl-containing diazide, then imagewise exposing, treating with a gaseous base, removing excess base, overall flood exposing, baking and developing with an aqueous alkaline solution.

Image Reversal Negative Working O-Naphthoquinone Diazide And Cross-Linking Compound Containing Photoresist Process With Thermal Curing

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US Patent:
52565220, Oct 26, 1993
Filed:
Dec 30, 1991
Appl. No.:
7/815645
Inventors:
Mark A. Spak - Edison NJ
Donald Mammato - Lebanon NJ
Dana Durham - East Greenwich RI
Sangya Jain - Bridgewater NJ
Assignee:
Hoechst Celanese Corporation - Somerville NJ
International Classification:
G03F 730
US Classification:
430325
Abstract:
A process for converting a normally positive working photosensitive composition to a negative working composition is disclosed. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image. The image-reversal negative-working photoresists of this invention have superior storage stability and shelf life.

Image Reversal Negative Working O-Napthoquinone Diazide And Cross-Linking Compound Containing Photoresist Process With Thermal Curing

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US Patent:
49295365, May 29, 1990
Filed:
Nov 8, 1988
Appl. No.:
7/268639
Inventors:
Mark A. Spak - Edison NJ
Donald Mammato - Lebanon NJ
Dana Durham - Bloomsbury NJ
Sangya Jain - Bridgewater NJ
Assignee:
Hoechst Celanese Corporation - Somerville NJ
International Classification:
G03F 726
US Classification:
430325
Abstract:
A process for converting a normally positive working photosensitive composition to a negative working composition is disclosed. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image. The image-reversal negative-working photoresists of this invention have superior storage stability and shelf life.

Image Reversal Negative Working Photoresist Containing O-Quinone Diazide And Cross-Linking Compound

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US Patent:
53994566, Mar 21, 1995
Filed:
Nov 19, 1992
Appl. No.:
7/978099
Inventors:
Mark A. Spak - Edison NJ
Donald Mammato - Lebanon NJ
Dana Durham - East Greenwich RI
Sangya Jain - Bridgewater NJ
Assignee:
Hoechst Celanese Corporation - Somerville NJ
International Classification:
G03F 7023
US Classification:
430165
Abstract:
A process for converting a normally positive working photosensitive composition to a negative working composition. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image.

Photoresist Article Having A Portable, Conformable, Built-On Mask

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US Patent:
52408078, Aug 31, 1993
Filed:
Aug 2, 1989
Appl. No.:
7/388769
Inventors:
Sangya Jain - Bridgewater NJ
Salvatore Emmi - Beaverton OR
Thomas S. Phillips - W. Warwick RI
Assignee:
Hoechst Celanese Corporation - Somerville NJ
International Classification:
G03C 518
G03F 112
G03F 700
US Classification:
430148
Abstract:
A water soluble built-on mask layer is provided on a photoresist composition disposed on a substrate. The photoresist comprises an o-quinone diazide and a novolak or paravinyl phenol resin. The built-on mask layer comprises a water soluble, photobleachable diazonium salt, a coupler for the diazonium salt and an acidic, polymeric, film forming resin such as polystyrene sulfonic acid.
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Sangya R Jain from Bridgewater, NJ, age ~70 Get Report