Search

Ritu S Sodhi

from Chatsworth, CA
Age ~56
Get Report
Also known as:
Ritu Soni Sodhi, Ritu D Sodhi, Ritu C Sodhi, Ritu K Soni, Ritu Soni Soohi, Ritu S Delpak
Related to:
Keerti L Sodhi, 23Indra SodhiVandana K Soni, 59Brij Mohan SodhiAshok A Ghooi, 59Charanjit GhooiDeepak D Sodhi, 61Brijmohan SodhiB M SodhiSantosh K Soni, 89Monita K Soni, 65
Connected to:
Amrita Sodhi, 43Farah B Sodhi, 48Gurpreet G Sodhi, 43Jagdeep K Sodhi, 67Kanwal D Sodhi, 45Kanwaljit S Sodhi, 72Khushpal S Sodhi, 77Paul J Sodhi, 42Rajinder S Sodhi, 39Rani Sodhi, 68

Ritu Sodhi Phones & Addresses

  • Chatsworth, CA
  • Porter Ranch, CA
  • Jericho, NY
  • Woodbury, NY
  • Marina, CA
  • Melville, NY

Resumes

Resumes

Ritu Sodhi Photo 1

President

View page
Location:
Chatsworth, CA
Industry:
Accounting
Work:

President
Ritu Sodhi Photo 2

Ritu Sodhi

View page

Business Records

Name / Title
Company / Classification
Phones & Addresses
Ritu Soni Sodhi
Branch Manager
Divine Designs USA, Inc
Whol Homefurnishings Business Services
22860 Hialeah Way, Chatsworth, CA 91311
(818) 332-1667
Ritu Soni Sodhi
President
MINOLI LIFESTYLES, INC
22860 Hialeah Way, Chatsworth, CA 91311

Publications

Us Patents

Method For Manufacturing A Semiconductor Device With A Trench Termination

View page
US Patent:
6921699, Jul 26, 2005
Filed:
Sep 29, 2003
Appl. No.:
10/674444
Inventors:
Ling Ma - Los Angeles CA, US
Adam Amali - Hawthorne CA, US
Siddharth Kiyawat - El Segundo CA, US
Ashita Mirchandani - El Segundo CA, US
Donald He - Redondo Beach CA, US
Naresh Thapar - Los Angeles CA, US
Ritu Sodhi - Redondo Beach CA, US
Kyle Spring - Temecula CA, US
Daniel Kinzer - El Segundo CA, US
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L021/36
US Classification:
438270, 438700
Abstract:
A process for manufacturing a semiconductor device of the trench variety with reduced feature sizes and improved characteristics which process includes forming a termination structure having a field oxide disposed in a recess below the surface of the semiconductor die in which the active elements of the device are formed, and forming source regions after the major thermal steps have been performed.

Integrated Fet And Schottky Device

View page
US Patent:
6987305, Jan 17, 2006
Filed:
Aug 4, 2003
Appl. No.:
10/633824
Inventors:
Donald He - Redondo Beach CA, US
Ritu Sodhi - Redondo Beach CA, US
Davide Chiola - Marina del Rey CA, US
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 29/76
US Classification:
257417, 257330, 257327
Abstract:
A semiconductor device including a schottky device and a trench type semiconductor switching device such as a MOSFET formed in a common die.

Integrated Fet And Schottky Device

View page
US Patent:
7510953, Mar 31, 2009
Filed:
Oct 21, 2005
Appl. No.:
11/255745
Inventors:
Donald He - Redondo Beach CA, US
Ritu Sodhi - Redondo Beach CA, US
Davide Chiola - Marina Del Rey CA, US
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 21/28
US Classification:
438570, 257283, 257E29317, 257E27068, 257E29271
Abstract:
A semiconductor device including a schottky device and a trench type semiconductor switching device such as a MOSFET formed in a common die.

Silicide Gate Process For Trench Mosfet

View page
US Patent:
20030168695, Sep 11, 2003
Filed:
Mar 7, 2003
Appl. No.:
10/384897
Inventors:
Ritu Sodhi - Redondo Beach CA, US
Hamilton Lu - Los Angeles CA, US
Milton Boden - Redondo Beach CA, US
Assignee:
International Rectifier Corp.
International Classification:
H01L029/76
H01L029/94
H01L031/062
H01L031/113
H01L031/119
US Classification:
257/328000
Abstract:
The tops of the conductive polysilicon gates of a trench device have a layer of a silicide such as titanium silicide which is more conductive than the polysilicon gate, thereby reducing gate resistance.

Trench Mosfet Technology For Dc-Dc Converter Applications

View page
US Patent:
20040251491, Dec 16, 2004
Filed:
Jan 27, 2004
Appl. No.:
10/766465
Inventors:
Ling Ma - Los Angeles CA, US
Adam Amali - Hawthorne CA, US
Siddharth Kiyawat - El Segundo CA, US
Ashita Mirchandani - Torrance CA, US
Donald He - Redondo Beach CA, US
Naresh Thapar - Redondo Beach CA, US
Ritu Sodhi - Redondo Beach CA, US
Kyle Spring - Temecula CA, US
Daniel Kinzer - El Segundo CA, US
International Classification:
H01L029/76
US Classification:
257/329000
Abstract:
A trench power semiconductor device including a recessed termination structure.

Trench Fet With Non Overlapping Poly And Remote Contact Therefor

View page
US Patent:
6838735, Jan 4, 2005
Filed:
Feb 24, 2000
Appl. No.:
09/512497
Inventors:
Daniel M. Kinzer - El Segundo CA, US
Ritu Sodhi - Redondo Beach CA, US
Mark Pavier - Guildford, GB
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 2976
H01L 2994
US Classification:
257365, 257270, 257271, 257328, 257329, 257330, 257331, 257341
Abstract:
A power MOSFET has a plurality of spaced rows of parallel coextensive trenches. The trenches are lined with a gate oxide and are filled with conductive polysilicon. Spaced narrow polysilicon strips overlie the silicon surface and connects adjacent trenches to one another. The source contact is made at a location remote from the trenches and between the rows of trenches. The trenches are 1. 8 microns deep, are 0. 6 microns wide and are spaced by about 0. 6 microns or greater. The device has a very low figure of merit and is useful especially in low voltage circuits.
Control profile
Ritu S Sodhi from Chatsworth, CA, age ~56 Get Report