Michael D Sugino

7616632, Nov 10, 2009

Jul 15, 2004

10/891872

Michael Sugino - Mesa AZ, US

H04L 12/28

370389, 370252, 370401, 370408

A small world infrastructure (SWI) of a general packet communications network and a method of determining, establishing and maintaining a hierarchical forwarding path (HFP) interconnecting communications units (CUs) of the small world infrastructure. The SWI includes a domain that has a given communication unit CU as a message packet source, a plurality of associated communications units each in direct contact with the given CU, and a plurality of HFPs each providing the direct contact between the given CU and one of the associated CUs, respectively. The method includes providing these communications units in which there are HFPs between first and second CUs and between the second and the third CUs, and a third HFP is constructed between the first and the third CUs.

20050083858, Apr 21, 2005

Oct 7, 2004

10/960882

Michael Sugino - Mesa AZ, US

H04L012/28

370254000, 370397000, 370399000, 706014000

A small world infrastructure network of communication units, a plurality of which are stigmergic-capable nodes that are capable of generating and supporting virtual ants. A virtual ant can carry information relating to a node, such as its identification and sequence information, and can be sent by the node to one or more neighboring nodes to establish, recursively, hierarchical forwarding paths. A virtual ant interacts with a node through alteration of the table entries of the destination node receiving the virtual ant.

43193951, Mar 16, 1982

Jun 28, 1979

6/053132

Clarence A. Lund - Mesa AZ
Edward W. Barron - Mesa AZ
Howard E. Holstin - Tempe AZ
Michael D. Sugino - Scottsdale AZ

Motorola, Inc. - Schaumburg IL

H01L 21306
H01L 21441

29571

A self-aligned MOS transistor having improved operating characteristics and higher packing density and a method for fabricating the device. Resistance of the gate electrode is reduced substantially by forming the electrode of a metal silicide. Resistance of the source and drain regions is likewise reduced substantially by forming a metal silicide in the doped junction region which allows those regions to be smaller and to require less area. The silicided source and drain regions are self-aligned with and closely spaced to the silicided gate electrode. This is provided by a process which utilizes and makes possible an undercut etching of a polycrystalline silicon gate electrode.

45034516, Mar 5, 1985

Jul 30, 1982

6/404264

Clarence A. Lund - Phoenix AZ
Michael D. Sugino - Mesa AZ

Motorola, Inc. - Schaumburg IL

H01L 2352
H01L 2704

357 50

In a channel formed in one surface of a semiconductor substrate having a first conductivity, e. g. N type, a layer of material having a second conductivity type, e. g. P type boron, and a layer of relatively low resistance material such as Tungsten in contact with the first layer but insulated from the substrate. Second conductivity type tubs and the like can be formed adjacent the bus and in direct contact therewith through the first layer.

45918902, May 27, 1986

Dec 20, 1982

6/450869

Clarence A. Lund - Phoenix AZ
Michael D. Sugino - Mesa AZ

Motorola Inc. - Schaumburg IL

H01L 2978

357 2311

Radiation hard, N-channel MOS devices comprising active regions surrounded by field oxide protected by an underlying region of heavily doped p-type material. The guard region is doped heavily enough to provide field inversion voltages in the range of 50 V to 60 V prior to irradiation. The guard region is separated from the source and drain regions to provide acceptably high breakdown voltages. The devices are produced with minor variations to well known, high density local oxidation of silicon-type processes.