Marty A Pichler

47642610, Aug 16, 1988

Nov 23, 1987

7/123821

Miroslav Ondris - Chagrin Falls OH
Marty A. Pichler - Parma OH

Stemcor Corporation - Cleveland OH

C25D 550
C25D 904
H01L 3118

204 371

A three layer, photovoltaic structure having polycrystalline semiconductor layers disposed in series optically and in sequential touching contact includes a relatively wide optical bandgap energy window layer, a light-absorbing layer and a third, relatively wide bandgap energy layer that forms a minority carrier mirror with the light-absorbing layer. All three layers have different compositions so that the structure includes two heterojunctions. The light-absorbing layer and third layer are of the same conductivity type. The structure is conveniently realized using II-VI semiconductor compounds such as a cadmium sulfide or zinc sulfide window layer, a mercury cadmium telluride, cadmium telluride, zinc cadmium telluride or mercury zinc telluride light-absorbing layer and a third layer of cadmium telluride, zinc telluride, zinc cadmium telluride, mercury cadmium telluride or cadmium manganese telluride. Cadmium is present in at least two of the three layers of the novel structures. Tellurium is present in two of the three layers.

47536845, Jun 28, 1988

Oct 31, 1986

6/926283

Miroslav Ondris - Chagrin Falls OH
Marty A. Pichler - Parma OH

The Standard Oil Company - Cleveland OH

H01L 3106

136258

A three layer, photovoltaic structure having polycrystalline semiconductor layers disposed in series optically and in sequential touching contact includes a relatively wide optical bandgap energy window layer, a light-absorbing layer and a third, relatively wide bandgap energy layer that forms a minority carrier mirror with the light-absorbing layer. All three layers have different compositions so that the structure includes two heterojunctions. The light-absorbing layer and third layer are of the same conductivity type. The structure is conveniently realized using II-VI semiconductor compounds such as a cadmium sulfide or zinc sulfide window layer, a mercury cadmium telluride, cadmium telluride, zinc cadmium telluride or mercury zinc telluride light-absorbing layer and a third layer of cadmium telluride, zinc telluride, zinc cadmium telluride, mercury cadmium telluride or cadmium manganese telluride. Cadmium is present in at least two of the three layers of the novel structures. Tellurium is present in two of the three layers.

43819770, May 3, 1983

Sep 21, 1981

6/304211

V. Frances Gaylor - Parma OH
Janice L. Greene - Chagrin Falls OH
Arthur F. Miller - Lyndhurst OH
Marty A. Pichler - Parma OH

The Standard Oil Company - Cleveland OH

C25B 100
C25B 300
C07C10372

204 74

An electrochemical method is provided for maintaining the optimum activity of copper-containing catalysts for the production of amides from nitriles and water. Also provided is a process for producing amides from nitriles and water by hydrolysis.

49098578, Mar 20, 1990

Dec 21, 1988

7/287930

Miroslav Ondris - Chagrin Falls OH
Marty A. Pichler - Parma OH
Richard E. Brownfield - North Canton OH

Standard Oil Company - Cleveland OH

H01L 3106

136260

A method of electrodepositing a doped compound semiconductor film including tellurium and a metal selected from Group IIB of the Period Table of Elements by adding an effective concentration of dopant ions to the electrolyte bath. Cadmium telluride, mercury cadmium telluride and zinc cadmium telluride may be doped with copper, silver and gold. The conductivity type of the electrodeposited doped layers may be changed by a heat treatment. Thin film photovoltaic cells incorporating the doped layer to form a heterojunction with a semiconductor layer of the opposite conductivity type show substantial improvements in open circuit voltage, fill factor and efficiency over similar devices employing undoped electrodeposited layers.

48161209, Mar 28, 1989

Jan 26, 1988

7/148195

Miroslav Ondris - Chagrin Falls OH
Marty A. Pichler - Parma OH
Richard E. Brownfield - North Canton OH

The Standard Oil Company - Cleveland OH

C25D 550
H01L 3118
H01L 3106

204 371

A method of electrodepositing a doped compound semiconductor film including tellurium and a metal selected from Group IIB of the Period Table of Elements by adding an effective concentration of dopant ions to the electrolyte bath. Cadmium telluride, mercury cadmium telluride and zinc cadmium telluride may be doped with copper, silver and gold. The conductivity type of the electrodeposited doped layers may be changed by a heat treatment. Thin film photovoltaic cells incorporating the doped layer to form a heterojunction with a semiconductor layer of the opposite conductivity type show substantial improvements in open circuit voltage, fill factor and efficiency over similar devices employing undoped electrodeposited layers.

43138039, Feb 2, 1982

Apr 1, 1980

6/136191

V. Frances Gaylor - Parma OH
Janice L. Greene - Chagrin Falls OH
Arthur F. Miller - Lyndhurst OH
Marty A. Pichler - Parma OH

The Standard Oil Company - Cleveland OH

C25B 100
C25B 300
C07C10312

204 74

An electrochemical method is provided for maintaining the optimum activity of copper-containing catalysts for the production of amides from nitriles and water. Also provided is a process for producing amides from nitriles and water by hydrolysis.