Search

Krishna Koliwad Phones & Addresses

  • 429 Paulette Pl, La Canada Flintridge, CA 91011 (818) 790-1517 (818) 790-7324
  • La Canada, CA
  • 497 California Blvd, Pasadena, CA 91106 (626) 568-3269
  • 497 E California Blvd #215, Pasadena, CA 91106 (626) 568-3269
  • Los Angeles, CA
  • La Canada Flt, CA
  • 429 Paulette Pl, La Canada Flintridge, CA 91011 (818) 426-3676

Work

Company: Nasa/jet proopulsion lab Aug 1975 to Jun 2006 Position: Retired space technologist

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Cornell University 1963 to 1966 Specialities: Applied Physics, Philosophy

Skills

Development • Laboratory • Clinical Research • Research • Management Consulting

Languages

English

Interests

Kids • Medicine • Exercise • Electronics • Home Improvement • Reading • Fitness • Home Decoration • Health

Industries

Management Consulting

Resumes

Resumes

Krishna Koliwad Photo 1

Krishna Koliwad

View page
Location:
429 Paulette Pl, La Canada Flintridge, CA 91011
Industry:
Management Consulting
Work:
Nasa/Jet Proopulsion Lab Aug 1975 - Jun 2006
Retired Space Technologist

Semiconductor Research and Development Laboratory at Texas Instrument Apr 1970 - Apr 1975
Member of Technical Staff
Education:
Cornell University 1963 - 1966
Doctorates, Doctor of Philosophy, Applied Physics, Philosophy
Skills:
Development
Laboratory
Clinical Research
Research
Management Consulting
Interests:
Kids
Medicine
Exercise
Electronics
Home Improvement
Reading
Fitness
Home Decoration
Health
Languages:
English

Publications

Us Patents

Copper Doped Polycrystalline Silicon Solar Cell

View page
US Patent:
42499577, Feb 10, 1981
Filed:
May 30, 1979
Appl. No.:
6/043941
Inventors:
Alan M. Administrator of the National Aeronautics and Space Lovelace
Krishna M. Koliwad - La Canada CA
Taher Daud - La Crescenta CA
International Classification:
H01L 3106
US Classification:
136258
Abstract:
Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

Method Of Increasing Minority Carrier Lifetime In Silicon Web Or The Like

View page
US Patent:
44015054, Aug 30, 1983
Filed:
Mar 31, 1982
Appl. No.:
6/364092
Inventors:
James K. Liu - Glendale CA
Guenter H. Schwuttke - Poughkeepsie NY
Krishna M. Koliwad - La Canada CA
Assignee:
The United States of America as represented by the Administrator
National Aeronautics and Space Administration - Washington DC
International Classification:
C30B 1534
C30B 2906
C30B 3300
US Classification:
156608
Abstract:
A silicon dendrite is grown as a ribbon forming two silicon crystal layers which are separated by an interface layer which contains a large number of defects. Significant increase of minority carrier lifetime with homogeneous distribution at the outer surfaces of the two silicon crystal layers are achieved by processing the web in an atmosphere of a selected gas, e. g. oxygen, nitrogen or an inert gas, for about 30 minutes to several hours at a temperature preferably on the order of 900. degree. C. -1200. degree. C.
Krishna M Koliwad from La Canada, CA, age ~87 Get Report