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Edgar B Genio

from Santa Clara, CA
Age ~60
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Also known as:
Edgar B Gnio
Related to:
Leonard Sheila Garrison, 67Maria L Genio, 54
Connected to:
Maria Genio, 67Al Genis, 72Alan Genis, 73Jul Genis, 66Margarita Genis, 38Marie G Genis, 52Sharon Genis, 84Laura L Genise, 33Alexandra N Genito, 35Dennis J Genito, 71

Edgar Genio Phones & Addresses

  • Santa Clara, CA
  • San Jose, CA
  • Menlo Park, CA
  • Goleta, CA
  • Gainesville, FL

Work

Company: Institute of microelectronics, chinese academy of sciences Mar 2010 Position: Professor

Education

Degree: Ph.D. School / High School: University of Florida Specialities: Physics

Industries

Semiconductors

Resumes

Resumes

Edgar Genio Photo 1

Principal Consultant

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Location:
San Francisco, CA
Industry:
Semiconductors
Work:
Institute of Microelectronics, Chinese Academy of Sciences since Mar 2010
Professor
startup since 2009
Technology Development
Applied Materials 2002 - 2009
Technologist
Boxer Cross Inc. 2002 - 2003
Development Scientist
University of California Santa Barbara and BEST: JPL-NASA-UCSB Int'l Space Station Collaboration 1997 - 2001
Post Doctoral Scientist
Education:
University of Florida
Ph.D., Physics University of the Philippines
B.S., Physics

Business Records

Name / Title
Company / Classification
Phones & Addresses
Edgar Genio
President
Apris Technologies, Inc
3333 Bowers Ave, Santa Clara, CA 95054
2635 N 1 St, San Jose, CA 95134

Publications

Us Patents

Evaluation Of Openings In A Dielectric Layer

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US Patent:
7379185, May 27, 2008
Filed:
Nov 1, 2004
Appl. No.:
10/979397
Inventors:
Peter G. Borden - San Mateo CA, US
Jiping Li - Fremont CA, US
Edgar Genio - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G01N 21/55
US Classification:
356445, 356635, 3562371
Abstract:
A patterned dielectric layer is evaluated by measuring reflectance of a region which has openings. A heating beam may be chosen for having reflectance from an underlying conductive layer that is several times greater than absorptance, to provide a heightened sensitivity to presence of residue and/or changes in dimension of the openings. Reflectance may be measured by illuminating the region with a heating beam modulated at a preset frequency, and measuring power of a probe beam that reflects from the region at the preset frequency. Openings of many embodiments have sub-wavelength dimensions (i. e. smaller than the wavelength of the heating beam). The underlying conductive layer may be patterned into links of length smaller than the diameter of heating beam, so that the links float to a temperature higher than a corresponding temperature attained by a continuous trace that transfers heat away from the illuminated region by conduction.

Spectrometric Metrology Of Workpieces Using A Permanent Window As A Spectral Reference

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US Patent:
7911603, Mar 22, 2011
Filed:
Feb 18, 2009
Appl. No.:
12/388222
Inventors:
Edgar Genio - Santa Clara CA, US
Edward W. Budiarto - Fremont CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G01J 3/42
US Classification:
356300, 356326
Abstract:
In a spectrographic workpiece metrology system having an optical viewing window, the viewing window is calibrated against a reference sample of a known absolute reflectance spectrum to produce a normalized reflectance spectrum of the reference sample, which is combined with the absolute reflectance spectrum to produce a correction factor. Successive production workpieces are measured through the window and calibrated against the viewing window reflectance, and transformed to absolute reflectance spectra using the same correction factor without having to re-load the reference sample.

Spectrographic Metrology Of Patterned Wafers

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US Patent:
7969568, Jun 28, 2011
Filed:
Feb 11, 2009
Appl. No.:
12/369627
Inventors:
James Matthew Holden - San Jose CA, US
Edgar Genio - Santa Clara CA, US
Todd J. Egan - Fremont CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G01J 3/00
US Classification:
356300, 382145
Abstract:
Light reflected from respective image elements of a workpiece is channeled through respective light channeling elements to respective locations of a spectrographic light disperser. Spectral distributions of the respective image elements produced by the spectrographic light disperser are recorded. A processor groups similar spectral distributions into respective groups of mutually similar distributions, and classifies the groups by the number of distributions contained in each group.

Metrology Of Thin Film Devices Using An Addressable Micromirror Array

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US Patent:
8018586, Sep 13, 2011
Filed:
Feb 18, 2009
Appl. No.:
12/388173
Inventors:
Edgar Genio - Santa Clara CA, US
Edward W. Budiarto - Fremont CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G01N 21/00
US Classification:
3562372, 3562371
Abstract:
An addressable micromirror array is employed in conjunction with circuit topology navigation software to rapidly wavelength sample selected measurement points in an integrated circuit region.

Spectrometric Metrology Of Workpieces Using A Permanent Window As A Spectral Reference

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US Patent:
8027031, Sep 27, 2011
Filed:
Feb 10, 2011
Appl. No.:
13/025064
Inventors:
Edgar Genio - Santa Clara CA, US
Edward W. Budiarto - Fremont CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G01J 3/42
US Classification:
356300, 356326
Abstract:
In a spectrographic workpiece metrology system having an optical viewing window, the viewing window is calibrated against a reference sample of a known absolute reflectance spectrum to produce a normalized reflectance spectrum of the reference sample, which is combined with the absolute reflectance spectrum to produce a correction factor. Successive production workpieces are measured through the window and calibrated against the viewing window reflectance, and transformed to absolute reflectance spectra using the same correction factor without having to re-load the reference sample.

Metrology Of Thin Film Devices Using An Addressable Micromirror Array

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US Patent:
8130373, Mar 6, 2012
Filed:
Jun 28, 2011
Appl. No.:
13/170469
Inventors:
Edgar Genio - Santa Clara CA, US
Edward W. Budiarto - Fremont CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G01N 21/00
US Classification:
3562372, 3562371
Abstract:
An addressable micromirror array is employed in conjunction with circuit topology navigation software to rapidly wavelength sample selected measurement points in an integrated circuit region.

High Throughput Measurement Of Via Defects In Interconnects

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US Patent:
20050214956, Sep 29, 2005
Filed:
Mar 29, 2004
Appl. No.:
10/813407
Inventors:
Jiping Li - Fremont CA, US
Peter Borden - San Mateo CA, US
Edgar Genio - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L021/66
US Classification:
438014000
Abstract:
Heat is applied to a conductive structure that includes one or more vias, and the temperature at or near the point of heat application is measured. The measured temperature indicates the integrity or the defectiveness of various features (e.g. vias and/or traces) in the conductive structure, near the point of heat application. Specifically, a higher temperature measurement (as compared to a measurement in a reference structure) indicates a reduced heat transfer from the point of heat application, and therefore indicates a defect. The reference structure can be in the same die as the conductive structure (e.g. to provide a baseline) or outside the die but in the same wafer (e.g. in a test structure) or outside the wafer (e.g. in a reference wafer), depending on the embodiment.
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Edgar B Genio from Santa Clara, CA, age ~60 Get Report