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Zhiqing Shi

from San Jose, CA
Age ~67
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Also known as:
Zhi Qing Shi, Zhiqing S He, Zhi Q Shi
Phone and address:
2723 Nicasio Ct, San Jose, CA 95127
(408) 926-7270
Related to:
Tao LinShihhuang Lin, 53Lili He, 68Jose I Vilches, 68Linda X Shi, 40Steven Shi
Connected to:
Amanda L Shi, 49Anbin Shi, 62Anna Shi, 41Celine Shi, 28Chaojun Shi, 64Chenxuan Shi, 45Dan H Shi, 50Daphne Shi, 68Dylan L Shi, 85Ellen B Shi, 32

Zhiqing Shi Phones & Addresses

  • 2723 Nicasio Ct, San Jose, CA 95127 (408) 926-7270
  • 4300 The Woods Dr, San Jose, CA 95136
  • 11509 Elizabeth St, Beltsville, MD 20705
  • 210 Pardridge Pl, Dekalb, IL 60115
  • Hopatcong, NJ
  • Piscataway, NJ
  • 2723 Nicasio Ct, San Jose, CA 95127

Work

Position: Administrative Support Occupations, Including Clerical Occupations

Education

Degree: Associate degree or higher

Publications

Us Patents

Method For Making A Vertical-Cavity Surface Emitting Laser With Improved Current Confinement

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US Patent:
6534331, Mar 18, 2003
Filed:
Jul 24, 2001
Appl. No.:
09/912803
Inventors:
Andrew Shuh-Huei Liao - San Jose CA
Ghulam Hasnain - Palo Alto CA
Chihping Kuo - Milpitas CA
Zhiqing Shi - San Jose CA
Minh Ngoc Trieu - San Jose CA
Assignee:
LuxNet Corporation - Fremont CA
International Classification:
H01L 2100
US Classification:
438 46, 438 29, 438 45, 372 45, 372 48, 372 50
Abstract:
A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. The aperture-defining layer is constructed by implanting or diffusing elements into one or more of the mirror layers prior to depositing the remaining mirror layers on top of the aperture-defining layer.

Vertical Cavity Surface Emitting Laser Having Improved Light Output Function

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US Patent:
6553053, Apr 22, 2003
Filed:
Jul 25, 2001
Appl. No.:
09/912611
Inventors:
Andrew Shuh-Huei Liao - San Jose CA
Ghulam Hasnain - Palo Alto CA
Chihping Kuo - Milpitas CA
Zhiqing Shi - San Jose CA
Minh Ngoc Trieu - San Jose CA
Assignee:
LuxNet Corporation - Fremont CA
International Classification:
H01S 308
US Classification:
372 96, 372 45, 372 46
Abstract:
A laser diode that includes a light guiding structure that improves the light-output-versus-current curve by altering the multiple spatial modes of the laser diode. A laser diode according to the present invention includes a bottom mirror constructed on an electrically conducting material, an active region constructed from a first conductive spacer situated above the bottom mirror, a light emitting layer, and a second conductive spacer situated above the light emitting layer. The laser diode also includes a top mirror constructed from a plurality of mirror layers of a semiconducting material of a first conductivity type that are located above the second conductive spacer. The adjacent mirror layers have different indexes of refraction. One or more of the top mirror layers is altered to provide an aperture defining layer that includes an aperture region that alters the spatial modes of the device.

Vertical-Cavity Surface Emitting Laser Utilizing A Reversed Biased Diode For Improved Current Confinement

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US Patent:
6680963, Jan 20, 2004
Filed:
Jul 24, 2001
Appl. No.:
09/912801
Inventors:
Andrew Shuh-Huei Liao - San Jose CA
Ghulam Hasnain - Palo Alto CA
Chihping Kuo - Milpitas CA
Zhiqing Shi - San Jose CA
Minh Ngoc Trieu - San Jose CA
Assignee:
Lux Net Corporation - Fremont CA
International Classification:
H01S 5183
US Classification:
372 96, 372 46
Abstract:
A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. In one embodiment of the invention, the confinement region includes a semiconducting material of a second conductivity type.

Vertical-Cavity Surface Emitting Laser Utilizing A High Resistivity Buried Implant For Improved Current Confinement

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US Patent:
20030021318, Jan 30, 2003
Filed:
Jul 24, 2001
Appl. No.:
09/912802
Inventors:
Andrew Liao - San Jose CA, US
Ghulam Hasnain - Palo Alto CA, US
Chihping Kuo - Milpitas CA, US
Zhiqing Shi - San Jose CA, US
Minh Trieu - San Jose CA, US
International Classification:
H01S005/00
H01S003/08
US Classification:
372/046000, 372/096000
Abstract:
A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. In one embodiment of the invention, the confinement region includes a material that has been doped with impurities that increase the resistance of the material to a value greater than 5×10ohm-cm.
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Zhiqing Shi from San Jose, CA, age ~67 Get Report