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Zhimin Wan

from San Francisco, CA
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Connected to:
Alexander S Wan, 57Alexis Wan, 42An C Wan, 38Brenda J Wan, 59Brenton O Wan, 70Carrie S Wan, 32Chelsea Wan, 30Chia Y Wan, 79Cho S Wan, 76Chooi P Wan, 58

Zhimin Wan Phones & Addresses

  • 1274 41St Ave, San Francisco, CA 94122 (415) 242-1875

Resumes

Resumes

Zhimin Wan Photo 1

Vice President Engineering

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Location:
4716 north 91St Ln, Phoenix, AZ 85037
Industry:
Semiconductors
Work:
Aibt
Vice President Engineering
Languages:
English
Zhimin Wan Photo 2

Postdoctoral Fellow

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Work:
Uga
Postdoctoral Fellow

Publications

Us Patents

Method And System For Moving Wafer During Scanning The Wafer

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US Patent:
20100310341, Dec 9, 2010
Filed:
Jun 5, 2009
Appl. No.:
12/479288
Inventors:
Peter MOK - Fremont CA, US
Zhimin Wan - Sunnyvale CA, US
International Classification:
H01L 21/673
US Classification:
41422201, 414806
Abstract:
A system and a method for moving a wafer during scanning the wafer by an ion beam. The proposed system includes an extendable/retractable arm, a holding apparatus and a driving apparatus. At least a length of the extendable/retractable arm is adjustable. The holding apparatus is capable of holding a wafer and is fixed on a specific portion of the extendable/retractable arm. Furthermore, the driving apparatus is capable of extending and/or retracting the extendable/retractable arm, such that the holding apparatus is moved together with the specific portion. In addition, the proposed method includes the following steps. First, hold the wafer by a holding apparatus fixed on a specific portion of an extendable/retractable arm. After that, adjust a length of the extendable/retractable. Therefore, the holding apparatus, i.e. the wafer, can be moved by the extension/retraction of the extendable/retractable arm.

Apparatus And Method For Measuring Ion Beam Current

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US Patent:
20120019257, Jan 26, 2012
Filed:
Jul 22, 2010
Appl. No.:
12/841833
Inventors:
PETER M. KOPALIDIS - Fremont CA, US
ZHIMIN WAN - Sunnyvale CA, US
Assignee:
ADVANCED ION BEAM TECHNOLOGY, INC. - San Jose CA
International Classification:
G01N 27/62
US Classification:
324459
Abstract:
Techniques for ion beam current measurement, especially for measuring low energy ion beam current, are disclosed. In one exemplary embodiment, the techniques may be realized as an ion beam current measurement apparatus has at least a planar Faraday cup and a magnet device. The planar Faraday cup is close to an inner surface of a chamber wall, and may be non-parallel to or parallel to the inner surface. The magnet device is located close to the planar Faraday cup. Therefore, by properly adjusting the magnetic field, secondary electrons, incoming electrons and low energy ions may be adequately suppressed. Further, the planar Faraday cup may surround an opening of an additional Faraday cup being any conventional Faraday cup. Therefore, the whole ion beam may be received and measured well by the larger cross-section area of at least the planar Faraday cup on the ion beam path.

Apparatus And Method For Measuring Ion Beam Current

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US Patent:
20130057250, Mar 7, 2013
Filed:
Sep 7, 2011
Appl. No.:
13/227425
Inventors:
Peter M. KOPALIDIS - Fremont CA, US
Zhimin WAN - Sunnyvale CA, US
Assignee:
ADVANCED ION BEAM TECHNOLOGY, INC. - Fremont CA
International Classification:
G01N 27/62
US Classification:
324 713
Abstract:
Techniques for measuring ion beam current, especially for measuring low energy ion beam current, are disclosed. The technique may be realized as an ion beam current measurement apparatus having at least a planar Faraday cup and a voltage assembly. The planar Faraday cup is located close to an inner surface of a chamber wall, and intersects an ion beam path. The voltage assembly is located outside a chamber having the chamber wall. Therefore, by properly adjusting the electric voltage applied on the planar Faraday cup by the voltage assembly, some undesired charged particles may be adequately suppressed. Further, the planar Faraday cup may surround an opening of an additional Faraday cup being any conventional Faraday cup. Therefore, the whole ion beam may be received and measured well by the larger cross-section area of the planar Faraday cup on the ion beam path.

Method And Apparatus For Anisotropic Pattern Etching And Treatment

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US Patent:
20210151290, May 20, 2021
Filed:
Jan 29, 2021
Appl. No.:
17/163248
Inventors:
- Fremont CA, US
Shuogang Huang - Fremont CA, US
Zhimin Wan - Fremont CA, US
Mark Merrill - Fremont CA, US
International Classification:
H01J 37/305
H01L 21/67
H01L 21/687
H01L 21/3065
H01J 37/32
Abstract:
Methods and apparatuses for providing an anisotropic ion beam for etching and treatment of substrate are discussed. In one embodiment, a system for processing a substrate includes a chamber, a chuck assembly, an ion source, and a grid system. The ion source includes grid system interfaces both the chamber and the ion source and includes a plurality of holes through which ions are extracted from the ion source to form an ion beam. The grid system is oriented so the ion beam is directed into the chamber toward the substrate support, and the array of holes of the grid system is defined vertically by a y-axis and horizontally by an x-axis, The array of holes is defined by hole densities that vary vertically in the y-axis such that the ion beam is caused to have an energy density gradient that is defined vertically in the y-axis.

Method And Apparatus For Anisotropic Pattern Etching And Treatment

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US Patent:
20190148109, May 16, 2019
Filed:
Nov 10, 2017
Appl. No.:
15/809957
Inventors:
- Fremont CA, US
Shuogang Huang - Fremont CA, US
Zhimin Wan - Fremont CA, US
Mark Merrill - Fremont CA, US
International Classification:
H01J 37/305
H01L 21/67
H01L 21/687
H01L 21/3065
H01L 21/66
H01J 37/32
H01J 37/20
Abstract:
Methods and apparatuses for providing an anisotropic ion beam for etching and treatment of substrate are discussed. In one embodiment, a system for processing a substrate includes a chamber, a chuck assembly, an ion source, and a grid system. The ion source includes grid system interfaces both the chamber and the ion source and includes a plurality of holes through which ions are extracted from the ion source to form an ion beam. The size of the plurality holes varies along an axis such that the ion density of the ion beam also varies along the axis. The density of the plurality of holes varies along an axis such that the ion density of the ion beam also varies along the axis. In some embodiments, the energies of a beamlet or multiple beamlets may be individual defined to adjust beam energy density.

Ion Source Of An Ion Implanter

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US Patent:
20150056380, Feb 26, 2015
Filed:
Aug 23, 2013
Appl. No.:
13/975206
Inventors:
- Fremont CA, US
Xiao Bai - Fremont CA, US
Zhimin Wan - Sunnyvale CA, US
Peter M. Kopalidis - Fremont CA, US
Assignee:
ADVANCED ION BEAM TECHNOLOGY , INC. - Fremont CA
International Classification:
H01J 37/317
US Classification:
427523, 31511181
Abstract:
An ion source uses at least one induction coil to generate ac magnetic field to couple rf/VHF power into a plasma within a vessel, where the excitation coil may be a single set of turns each turn having lobes or multiple separate sets of windings. The excitation coil is positioned outside and proximate that side of the vessel that is opposite to the extraction slit, and elongated parallel to the length dimension of the extraction slit. The conducting shield(s) positioned outside or integrated with the well of the vessel are used to block the capacitive coupling to the plasma and/or to collect any rf/VHF current may be coupled into the plasma. The conducting shield positioned between the vessel and the coil set can either shield the plasma from capacitive coupling from the excitation coils, or be tuned to have a higher rf/VHF voltage to ignite or clean the source.
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Zhimin Wan from San Francisco, CA Get Report