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Zhimin Wan

from Sunnyvale, CA
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Related to:
Heng G Chen, 66Jiang WanzXiao Qun Wan, 67Zhiwei Wei Shi, 73
Connected to:
Alexander S Wan, 57Alexis Wan, 42An C Wan, 38Brenda J Wan, 59Brenton O Wan, 70Carrie S Wan, 32Chelsea Wan, 30Chia Y Wan, 79Cho S Wan, 76Chooi P Wan, 58

Zhimin Wan Phones & Addresses

  • 366 Mary Ave, Sunnyvale, CA 94086 (408) 773-8341 (201) 947-5040
  • 368 Mary Ave, Sunnyvale, CA 94086
  • 366 S Mary Ave, Sunnyvale, CA 94086 (408) 529-0030

Work

Position: Service Occupations

Education

Degree: Graduate or professional degree

Emails

z***[email protected]

Resumes

Resumes

Zhimin Wan Photo 1

Vice President Engineering

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Location:
4716 north 91St Ln, Phoenix, AZ 85037
Industry:
Semiconductors
Work:
Aibt
Vice President Engineering
Languages:
English
Zhimin Wan Photo 2

Postdoctoral Fellow

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Work:
Uga
Postdoctoral Fellow
Zhimin Wan Photo 3

Vice President Engineering

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Location:
Sunnyvale, CA
Industry:
Semiconductors
Work:
Aibt
Vice President Engineering

Business Records

Name / Title
Company / Classification
Phones & Addresses
Zhimin Wan
Director
ADVANCED ION BEAM TECHNOLOGY, INC
Commercial Physical Research
47370 Fremont Blvd, Fremont, CA 94538
81 Daggett Dr, San Jose, CA 95134
(408) 240-3200, (408) 434-0490

Publications

Us Patents

Apparatus And Method For Uniformly Depositing Thin Films Over Substrates

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US Patent:
6579420, Jun 17, 2003
Filed:
Feb 9, 2001
Appl. No.:
09/780212
Inventors:
Zhimin Wan - Sunnyvale CA
Jiong Chen - San Jose CA
Peiching Ling - San Jose CA
Jianmin Qiao - Fremont CA
Assignee:
Advanced Optical Solutions, Inc. - Sunnyvale CA
International Classification:
C23C 1600
US Classification:
20419211, 20419212, 20429804, 20429811, 20429823, 20429827, 20429828, 20429829, 427523, 427526, 118729, 118730
Abstract:
A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles. The method further includes a step of providing a rotational means for rotating the substrate holder to rotate each of the substrates exposed to the thin-film particles for depositing a thin film thereon. And, the method further includes a step of providing a laterally reciprocal moving means for reciprocally moving said substrate holder for said beam traversing on said substrate holder from one side of the edge to the other side of the edge or at least passing through the central area of said substrate holder.

Apparatus And Method For Reducing Implant Angle Variations Across A Large Wafer For A Batch Disk

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US Patent:
6806479, Oct 19, 2004
Filed:
Aug 13, 2003
Appl. No.:
10/641219
Inventors:
Zhimin Wan - Sunnyvale CA
Jiong Chen - San Jose CA
John D. Pollock - Rowley MA
Assignee:
Advanced Ion Beam Technology, Inc. - San Jose CA
International Classification:
H01J 3720
US Classification:
25049221, 25044211
Abstract:
A method to rotate individual pad of a batch disk to an implant angle and lock them in place, with the pad surface having conical or near conical surface to minimize the implant angle variation across a wafer on the pad for both tilt angle and twist angle, at large tilt angle implant. The implanter includes a disk with multiple attached pads that can hold substrates securely when the hub is at rest or rotates. The disk rotates around its spin axis, which moves laterally at a programmed speed profile so that all substrates on the hub can get evenly touched by the fixed ion beam. The pad rotation axis is at an angle with the disk spin axis, and the angle is preferable 90 degrees. The nominal of the pad surface is at an angle, i. e. , a tilt angle, relative to the incident ion beam. A rotation mechanism is applied to each individual pad to rotate the pad to the desired tilt angle.

Apparatus For Ion Beam Implantation

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US Patent:
6918351, Jul 19, 2005
Filed:
Apr 26, 2002
Appl. No.:
10/133140
Inventors:
Jiong Chen - San Jose CA, US
Zhimin Wan - Sunnyvale CA, US
Assignee:
Advanced Ion Beam Technology, Inc. - Sunnyvale CA
International Classification:
C23C016/00
H01G037/317
US Classification:
118723CB, 118723 EB, 118723 FE, 25049221, 25049223
Abstract:
This invention discloses an ion implantation apparatus that has an ion source and an ion extraction device for extracting an ion beam therefrom. The ion implantation apparatus includes an ion beam sweeping-and-deflecting device disposed immediately next to the ion extraction device. The ion implantation apparatus further includes a magnetic analyzer for guiding the ion beam passed through the deflecting-and-sweeping device. The mass analyzer is also used for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. The sweeping-and-deflecting device is applied to deflect the ion beam to project through the magnetic mass analyzer and the mass slit for sweeping the ion beam over a surface of the substrate to carry out an ion implantation.

Ion Implantation Method And Application Thereof

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US Patent:
7745804, Jun 29, 2010
Filed:
Feb 13, 2009
Appl. No.:
12/371182
Inventors:
Zhimin Wan - Sunnyvale CA, US
Assignee:
Advanced Ion Beam Technology, Inc. - San Jose CA
International Classification:
H01J 37/317
H01L 21/265
US Classification:
25049221, 25044211, 2504923, 7386491
Abstract:
An ion implantation method for achieving angular uniformity throughout a workpiece and application thereof are provided. The ion beam has at least one beamlet striking the workpiece surface with corresponding incident angles. The workpiece is mapped to an imaginary planar coordinate system. The incident angle of a center beamlet of the ion beam has a projection on the coordinate system forming a projection angle with an axis thereof. A workpiece orientation of the workpiece is adjusted based on the projection angle such that the contribution of each beamlet to the overall ion beam intensity upon striking the workpiece surface is rendered substantially the same from respective directions of each of the coordinate axes.

Ion Implanter And Method For Implanting A Wafer

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US Patent:
7750323, Jul 6, 2010
Filed:
May 13, 2009
Appl. No.:
12/465189
Inventors:
Zhimin Wan - Sunnyvale CA, US
Cheng-Hui Shen - Hsinchu County, TW
Assignee:
Advanced Ion Beam Technology, Inc. - Hsinchu
International Classification:
H01J 37/317
H01J 37/08
H01L 21/265
US Classification:
25049221, 25049222, 2504922, 250396 R
Abstract:
An ion implanter and a method for implanting a wafer are provided, wherein the method includes the following steps. First, a wafer has at least a first portion requiring a first doping density and a second portion requiring a second doping density is provided. The first doping density is larger than the second doping density. Thereafter, the first portion is scanned by an ion beam with a first scanning parameter value, and the second portion is scanned by the ion beam with a second scanning parameter value. The first scanning parameter value can be a first scan velocity, and the second scanning parameter value can be a second scan velocity different than the first scan velocity. Alternatively, the first scanning parameter value can be a first beam current, and the second scanning parameter value can be a second beam current different than the first beam current.

Ion Implanter And Method For Adjusting Ion Beam

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US Patent:
7807986, Oct 5, 2010
Filed:
May 27, 2009
Appl. No.:
12/473167
Inventors:
York Yang - Taichung, TW
Zhimin Wan - Sunnyvale CA, US
Assignee:
Advanced Ion Beam Technology, Inc. - Hsin-Chu
International Classification:
H01J 37/317
H01J 49/20
US Classification:
25049221, 250396 R, 250396 ML, 2504923, 3133611, 31511141
Abstract:
An ion implanter and method for adjusting the shape of an ion beam are disclosed. After an ion beam is outputted from an analyzer magnet unit, at least one set of bar magnets is used to adjust the shape of the ion beam when the ion beam passes through a space enclosed by the bar magnets. The set of bar magnets can apply a multi-stage magnetic field on the ion beam. Hence, different portions of the ion beam will have different deformations or alterations, because the multi-stage magnetic field will apply a non-uniform force to change the trajectory of ions. Moreover, each bar magnet of the set is powered by one and only one power source, such that the set of bar magnets essentially only can adjust the magnitude of the multi-stage magnetic field. Particular structures and techniques for achieving the multi-stage magnetic field are not limited.

Method For Low Temperature Ion Implantation

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US Patent:
8039374, Oct 18, 2011
Filed:
Mar 19, 2010
Appl. No.:
12/727573
Inventors:
John D. Pollock - Rowley MA, US
Zhimin Wan - Sunnyvale CA, US
Erik Collart - North Andover MA, US
Assignee:
Advanced Ion Beam Technology, Inc. - San Jose CA
International Classification:
H01L 21/425
US Classification:
438514, 438509, 438905, 257E21043, 257E21077, 257E2116, 257E21248, 257E21269
Abstract:
Techniques for low temperature ion implantation are provided to improve throughput. Specifically, the pressure of the backside gas may temporarily, continually or continuously increase before the starting of the implant process, such that the wafer may be quickly cooled down from room temperature to be essentially equal to the prescribed implant temperature. Further, after the vacuum venting process, the wafer may wait an extra time in the load lock chamber before the wafer is moved out the ion implanter, in order to allow the wafer temperature to reach a higher temperature quickly for minimizing water condensation on the wafer surface. Furthermore, to accurately monitor the wafer temperature during a period of changing wafer temperature, a non-contact type temperature measuring device may be used to monitor wafer temperature in a real time manner with minimized condensation.

Method For Low Temperature Ion Implantation

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US Patent:
8124508, Feb 28, 2012
Filed:
Mar 31, 2010
Appl. No.:
12/750983
Inventors:
John D. Pollock - Rowley MA, US
Zhimin Wan - Sunnyvale CA, US
Erik Collart - North Andover MA, US
Assignee:
Advanced Ion Beam Technology, Inc. - San Jose CA
International Classification:
H01L 21/425
US Classification:
438514, 438530
Abstract:
Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.
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Zhimin Wan from Sunnyvale, CA Get Report