US Patent:
20230012946, Jan 19, 2023
Inventors:
- Veldhoven, NL
Zhengwei ZHOU - San Jose CA, US
Lingling PU - San Jose CA, US
Assignee:
ASML NETHERLANDS B.V. - Veldhoven
International Classification:
H01J 37/28
H01J 37/24
H01J 37/26
H01J 37/244
Abstract:
A system and method for defect inspection using voltage contrast in a charged particle system are provided. Some embodiments of the system and method include positioning the stage at a first position to enable a first beam of the plurality of beams to scan a first surface area of the wafer at a first time to generate a first image associated with the first surface area; positioning the stage at a second position to enable a second beam of the plurality of beams to scan the first surface area at a second time to generate a second image associated with the first surface area; and comparing the first image with the second image to enable detecting whether a defect is identified in the first surface area of the wafer.