Zhen Ye Zhang

7113896, Sep 26, 2006

May 13, 2002

10/144455

Zhen Zhang - Dayton MD, US
Hong Zhang - Savannah GA, US

G06F 17/10

703 2, 705 7

A system and method for processing information in a data set that contains samples of at least two classes using an empirical risk minimization model, wherein each sample in the data set has an importance score. In one embodiment, the method includes the step of selecting samples of a first class being labeled with class label +1 and a second class with class label −1, from the data set, prescribing an empirical risk minimization model using the selected samples with an objective function and a plurality of constraints which adequately describes the solution of a classifier to separate the selected samples into the first class and the second class, modifying the empirical risk minimization model to include terms that individually limit the influence of each sample relative to its importance score in the solution of the empirical risk minimization model, and solving the modified empirical risk minimization model to obtain the corresponding classifier to separate the samples into the first class and the second class.

7529740, May 5, 2009

Aug 14, 2006

11/503713

Yuan-chi Chang - Bayside NY, US
Lipyeow Lim - North White Plains NY, US
Min Wang - Cortlandt Manor NY, US
Zhen Zhang - Champaign IL, US

International Business Machines Corporation - Armonk NY

G06F 17/30

707 3, 707200, 707204, 707205

A method for organizing deep Web services is provided. In one aspect, the method obtains a collection of sources and their associated attributes and/or input modes, for instance, using a crawling algorithm. The method uses this information to organize the sources into communities. A mining algorithm such as the hyperclique mining algorithm is used to obtain cliques of highly correlated attributes. A clustering algorithm such as the hierarchical agglomerative clustering algorithm is used to further cluster the cliques of attributes into larger cliques, which in the present disclosure is referred to as signatures. The sources that are associated with each signature form a community and a graph representation of the communities is constructed, where the vertices are communities and the edges are the shared attributes.

7533085, May 12, 2009

Aug 14, 2006

11/503754

Yuan-chi Chang - Bayside NY, US
Lipyeow Lim - North White Plains NY, US
Min Wang - Cortlandt Manor NY, US
Zhen Zhang - Champaign IL, US

International Business Machines Corporation - Armonk NY

G06F 17/30

707 3

A method for searching deep web services is provided. The method in one aspect allows organizing communities, sources and schema attributes in a multi-tier containment relationship; searching representative schema attributes in one or more communities; searching representative services in one or more communities; searching for related schema attributes; and searching for related communities.

7605003, Oct 20, 2009

Aug 5, 2003

10/635308

Daniel W. Chan - Clarksville MD, US
Zhen Zhang - Dayton MD, US
Eric Fung - Mountain View CA, US
Xiao-Ying Meng - Fremont CA, US

The Johns Hopkins University - Baltimore MD
Vermillion, Inc. - Fremont CA

G01N 33/43
G01N 33/50
G01N 33/53
G01N 30/72

436178, 436 64, 436153, 436171, 436173, 436811, 436813, 436815, 436824, 436825, 435 4, 435 71, 435807, 435967, 435973

The present invention relates to a method of qualifying ovarian cancer status in a subject comprising: (a) measuring at least one biomarker in a sample from the subject and (b) correlating the measurement with ovarian cancer status. The invention further relates to kits for qualifying ovarian cancer status in a subject.

7951529, May 31, 2011

Sep 16, 2005

11/662830

Jinong Li - Ellicott City MD, US
Carolyn N. White - Baltimore MD, US
Zhen Zhang - Dayton MD, US
Daniel W. Chan - Clarksville MD, US
Eric T. Fung - Los Altos CA, US
Xiao-Ying Meng - Fremont CA, US

The Johns Hopkins University - Baltimore MD
Vermillion, Inc. - Austin TX

C12Q 1/00

435 4

The present invention provides protein-based biomarkers and biomarker combinations that are useful in qualifying breast cancer status in a patient. In particular, the biomarkers of this invention are useful to classify a subject sample as breast cancer or non-breast cancer. The biomarkers can be detected by SELDI mass spectrometry.

8030154, Oct 4, 2011

Aug 3, 2010

12/849223

Ahmet S. Ozcan - Pleasantville NY, US
Christian Lavoie - Ossining NY, US
Zhen Zhang - Ossining NY, US
Bin Yang - Ossining NY, US

International Business Machines Corporation - Armonk NY
GLOBALFOUNDRIES, Inc. - Grand Cayman

H01L 21/8238

438230, 438199, 438581, 438696

In one embodiment, a method of forming a semiconductor device is provided that includes providing a gate structure on a semiconductor substrate. Sidewall spacers may be formed adjacent to the gate structure. A metal semiconductor alloy may be formed on the upper surface of the gate structure and on an exposed surface of the semiconductor substrate that is adjacent to the gate structure. An upper surface of the metal semiconductor alloy is converted to an oxygen-containing protective layer. The sidewall spacers are removed using an etch that is selective to the oxygen-containing protective layer. A strain-inducing layer is formed over the gate structure and the semiconductor surface, in which at least a portion of the strain-inducing layer is in direct contact with the sidewall surface of the gate structure. In another embodiment, the oxygen-containing protective layer of the metal semiconductor alloy is provided by a two stage annealing process.

8168503, May 1, 2012

Mar 18, 2010

12/726736

Marwan H. Khater - Astoria NY, US
Christian Lavoie - Ossining NY, US
Bin Yang - Ossining NY, US
Zhen Zhang - Ossining NY, US

International Business Machines Corporation - Armonk NY

H01L 21/336

438300, 438285

A method of fabricating a Schottky field effect transistor is provided that includes providing a substrate having at least a first semiconductor layer overlying a dielectric layer, wherein the first semiconductor layer has a thickness of less than 10. 0 nm. A gate structure is formed directly on the first semiconductor layer. A raised semiconductor material is selectively formed on the first semiconductor layer adjacent to the gate structure. The raised semiconductor material is converted into Schottky source and drain regions composed of a metal semiconductor alloy. A non-reacted semiconductor material is present between the Schottky source and drain regions and the dielectric layer.

8247319, Aug 21, 2012

Feb 7, 2011

13/022474

Benjamin Luke Fletcher - Elmsford NY, US
Christian Lavoie - Pleasantville NY, US
Siegfried Lutz Maurer - Stormville NY, US
Zhen Zhang - Ossining NY, US

International Business Machines Corporation - Armonk NY

H01L 21/28
H01L 21/44

438581, 438583, 438664, 438682, 257E21164, 257E21165, 977890, 977900

Techniques for silicide, germanide or germanosilicide formation in extremely small structures are provided. In one aspect, a method for forming a silicide, germanide or germanosilicide in a three-dimensional silicon, germanium or silicon germanium structure having extremely small dimensions is provided. The method includes the following steps. At least one element is implanted into the structure. At least one metal is deposited onto the structure. The structure is annealed to intersperse the metal within the silicon, germanium or silicon germanium to form the silicide, germanide or germanosilicide wherein the implanted element serves to prevent morphological degradation of the silicide, germanide or germanosilicide. The implanted element can include at least one of carbon, fluorine and silicon.