Zhen Hui Zhang

7529740, May 5, 2009

Aug 14, 2006

11/503713

Yuan-chi Chang - Bayside NY, US
Lipyeow Lim - North White Plains NY, US
Min Wang - Cortlandt Manor NY, US
Zhen Zhang - Champaign IL, US

International Business Machines Corporation - Armonk NY

G06F 17/30

707 3, 707200, 707204, 707205

A method for organizing deep Web services is provided. In one aspect, the method obtains a collection of sources and their associated attributes and/or input modes, for instance, using a crawling algorithm. The method uses this information to organize the sources into communities. A mining algorithm such as the hyperclique mining algorithm is used to obtain cliques of highly correlated attributes. A clustering algorithm such as the hierarchical agglomerative clustering algorithm is used to further cluster the cliques of attributes into larger cliques, which in the present disclosure is referred to as signatures. The sources that are associated with each signature form a community and a graph representation of the communities is constructed, where the vertices are communities and the edges are the shared attributes.

7533085, May 12, 2009

Aug 14, 2006

11/503754

Yuan-chi Chang - Bayside NY, US
Lipyeow Lim - North White Plains NY, US
Min Wang - Cortlandt Manor NY, US
Zhen Zhang - Champaign IL, US

International Business Machines Corporation - Armonk NY

G06F 17/30

707 3

A method for searching deep web services is provided. The method in one aspect allows organizing communities, sources and schema attributes in a multi-tier containment relationship; searching representative schema attributes in one or more communities; searching representative services in one or more communities; searching for related schema attributes; and searching for related communities.

8168503, May 1, 2012

Mar 18, 2010

12/726736

Marwan H. Khater - Astoria NY, US
Christian Lavoie - Ossining NY, US
Bin Yang - Ossining NY, US
Zhen Zhang - Ossining NY, US

International Business Machines Corporation - Armonk NY

H01L 21/336

438300, 438285

A method of fabricating a Schottky field effect transistor is provided that includes providing a substrate having at least a first semiconductor layer overlying a dielectric layer, wherein the first semiconductor layer has a thickness of less than 10. 0 nm. A gate structure is formed directly on the first semiconductor layer. A raised semiconductor material is selectively formed on the first semiconductor layer adjacent to the gate structure. The raised semiconductor material is converted into Schottky source and drain regions composed of a metal semiconductor alloy. A non-reacted semiconductor material is present between the Schottky source and drain regions and the dielectric layer.

8247319, Aug 21, 2012

Feb 7, 2011

13/022474

Benjamin Luke Fletcher - Elmsford NY, US
Christian Lavoie - Pleasantville NY, US
Siegfried Lutz Maurer - Stormville NY, US
Zhen Zhang - Ossining NY, US

International Business Machines Corporation - Armonk NY

H01L 21/28
H01L 21/44

438581, 438583, 438664, 438682, 257E21164, 257E21165, 977890, 977900

Techniques for silicide, germanide or germanosilicide formation in extremely small structures are provided. In one aspect, a method for forming a silicide, germanide or germanosilicide in a three-dimensional silicon, germanium or silicon germanium structure having extremely small dimensions is provided. The method includes the following steps. At least one element is implanted into the structure. At least one metal is deposited onto the structure. The structure is annealed to intersperse the metal within the silicon, germanium or silicon germanium to form the silicide, germanide or germanosilicide wherein the implanted element serves to prevent morphological degradation of the silicide, germanide or germanosilicide. The implanted element can include at least one of carbon, fluorine and silicon.

8415748, Apr 9, 2013

Apr 23, 2010

12/766468

Marwan H. Khater - Astoria NY, US
Christian Lavoie - Ossining NY, US
Bin Yang - Ossining NY, US
Zhen Zhang - Ossining NY, US

International Business Machines Corporation - Armonk NY

H01L 21/02
H01L 31/07
H01L 29/47

257384, 257382, 257486, 257E21296, 257E29271

An epitaxial Ni silicide film that is substantially non-agglomerated at high temperatures, and a method for forming the epitaxial Ni silicide film, is provided. The Ni silicide film of the present disclosure is especially useful in the formation of ETSOI (extremely thin silicon-on-insulator) Schottky junction source/drain FETs. The resulting epitaxial Ni silicide film exhibits improved thermal stability and does not agglomerate at high temperatures.

8482084, Jul 9, 2013

Mar 18, 2010

12/726789

Marwan H. Khater - Astoria NY, US
Christian Lavoie - Ossining CA, US
Bin Yang - Ossining NY, US
Zhen Zhang - Ossining NY, US

International Business Machines Corporation - Armonk NY
Global Foundries, Inc. - Grand Cayman

H01L 29/76
H01L 31/00

257382, 257384, 257454, 257455

A Schottky field effect transistor is provided that includes a substrate having a layer of semiconductor material atop a dielectric layer, wherein the layer of semiconductor material has a thickness of less than 10. 0 nm. A gate structure is present on the layer of semiconductor material. Raised source and drain regions comprised of a metal semiconductor alloy are present on the layer of semiconductor material on opposing sides of the gate structure. The raised source and drain regions are Schottky source and drain regions. In one embodiment, a first portion of the Schottky source and drain regions that is adjacent to a channel region of the Schottky field effect transistor contacts the dielectric layer, and a non-reacted semiconductor material is present between a second portion of the Schottky source and drain regions and the dielectric layer.

20050196348, Sep 8, 2005

Mar 3, 2004

10/792370

Constantine Georgiades - East Brunswick NJ, US
Seema Mody - Montville NJ, US
Andre Soshinsky - Randolph NJ, US
Zhen Zhang - Basking Ridge NJ, US

A61K009/68
A61K007/20

424048000, 424053000

This invention relates to a stabilized, oral composition, and more particularly, to such composition comprising peroxide compounds.

20050196350, Sep 8, 2005

Jan 7, 2005

11/030845

Constantine Georgiades - East Brunswick NJ, US
Seema Mody - Montville NJ, US
Andre Soshinsky - Randolph NJ, US
Zhen Zhang - Basking Ridge NJ, US

A61K009/68
A61K007/20

424048000, 424053000

This invention relates to a stabilized, oral composition, and more particularly, to such composition comprising peroxide compounds.