Search

Yueying Liu

from Cary, NC
Age ~46
Get Report
Also known as:
Yueying Slyva, Ying Liu Yue
Phone and address:
202 Governors House Dr, Cary, NC 27560
Related to:
Margaret C Liu, 50Alan Xin-Ze Liu, 31Xiaoyuan Liu, 32Zhenzi Liu, 44Xiao Liu, 52Xintian Li, 52Ming LiuYan S Liu, 61Yuehua Liu, 47Qing Shi, 61
Connected to:
Abraham C Liu, 109Adele T Liu, 64Adi P Liu, 35Alan Y Liu, 39Albert Y Liu, 36Alen K Liu, 39Alma R Liu, 72Amanda T Liu, 54Ambrose M Liu, 52An P Liu, 59

Yueying Liu Phones & Addresses

  • 202 Governors House Dr, Morrisville, NC 27560
  • Cary, NC
  • San Jose, CA
  • Allen, TX
  • Plano, TX
  • Richardson, TX
  • Irving, TX
  • Raleigh, NC
  • Houston, TX

Work

Company: Triquint semiconductor May 2011 Position: Model design engineer

Education

School / High School: North Carolina State University May 2009 Specialities: Ph.D in Solid State Electronics

Skills

Physics • Semiconductors • Rf • Simulations • Ic • Agilent Ads • R&D • Radio Frequency • Circuit Design • Characterization • Analog • Analog Circuit Design • Pcb Design • Electronics • Mems • Cmos • Matlab • Mixed Signal • Integrated Circuits

Industries

Electrical/Electronic Manufacturing

Resumes

Resumes

Yueying Liu Photo 1

Rf Device Modeling Manager

View page
Location:
1104 Euphony Ln, Morrisville, NC 27560
Industry:
Electrical/Electronic Manufacturing
Work:
Cree Dec 2014 - Jun 2016
Rf Application Engineer
Wolfspeed Dec 2014 - Jun 2016
Rf Device Modeling Manager
Infineon Technologies Jul 2013 - Dec 2014
Rf Pa Designer
Triquint Semiconductor May 2011 - Jun 2013
Modeling Design Engineer
Triquint Semiconductor May 2010 - Aug 2011
Gan Product Engineer
Education:
North Carolina State University 2003 - 2009
Doctorates, Doctor of Philosophy, Philosophy, Electronics
Skills:
Physics
Semiconductors
Rf
Simulations
Ic
Agilent Ads
R&D
Radio Frequency
Circuit Design
Characterization
Analog
Analog Circuit Design
Pcb Design
Electronics
Mems
Cmos
Matlab
Mixed Signal
Integrated Circuits
Yueying Liu Photo 2

Yueying Liu Allen, TX

View page
Work:
Triquint Semiconductor

May 2011 to 2000
Model Design Engineer
Triquint Semiconductor
Richardson, TX
May 2010 to May 2011
GaN Product Engineer
ECE Dept. North Carolina State University

Aug 2004 to May 2009
Research Assistant
ECE Dept. North Carolina State University

Aug 2007 to Dec 2007
Device Engineer Intern
Education:
North Carolina State University
May 2009
Ph.D in Solid State Electronics
Chinese Academy of Sciences
M.S. in Microelectronics
Beijing University of Aeronautics and Astronautics
B.S. in Mechanical Engineering and Automation

Publications

Wikipedia

Liu Shan

View page

Liu Bei even told Zhuge Liang to seize the throne if Liu Shan proved to be incapable ... Huang Yueying Liu Chen Meng Huo

Us Patents

Depletion Mode Semiconductor Devices Including Current Dependent Resistance

View page
US Patent:
20190333767, Oct 31, 2019
Filed:
Jul 3, 2019
Appl. No.:
16/502771
Inventors:
- Durham NC, US
Yueying Liu - Morrisville NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
H01L 21/266
H01L 29/08
H01L 29/778
H01L 29/20
Abstract:
A transistor device is provided. The transistor device includes a substrate, a channel layer on the substrate, the channel layer including a GaN material, a barrier layer that is on the channel layer and that includes an AlGaN material, a drain electrode that is on the barrier layer in a drain region of the device, a source ohmic structure that is at least partially recessed into the barrier layer in a source region of the device, a source electrode that is on the source ohmic structure and a gate contact that is on the barrier layer and that is in a gate region of the device that is between the drain region and the source region.

Depletion Mode Semiconductor Devices Including Current Dependent Resistance

View page
US Patent:
20170373179, Dec 28, 2017
Filed:
Jun 22, 2017
Appl. No.:
15/613328
Inventors:
- Durham NC, US
Yueying Liu - Morrisville NC, US
International Classification:
H01L 29/778
H01L 29/20
H01L 29/08
H01L 29/06
H01L 21/266
H01L 29/207
H01L 21/265
Abstract:
A transistor device is provided. The transistor device includes a substrate, a channel layer on the substrate, the channel layer including a GaN material, a barrier layer that is on the channel layer and that includes an AlGaN material, a drain electrode that is on the barrier layer in a drain region of the device, a source ohmic structure that is at least partially recessed into the barrier layer in a source region of the device, a source electrode that is on the source ohmic structure and a gate contact that is on the barrier layer and that is in a gate region of the device that is between the drain region and the source region.
Control profile
Yueying Liu from Cary, NC, age ~46 Get Report