You L Li

7678371, Mar 16, 2010

Mar 6, 2006

11/369641

Alexey Alexandrovich Lugovskoy - Woburn MA, US
Karl Hanf - Billerica MA, US
You Li - Newton MA, US
Kenneth Simon - Cambridge MA, US
Herman Van Vlijmen - Mechelen, BE

Biogen Idec MA Inc. - Cambridge MA

A61K 39/00

4241331, 5303871

The present invention is based, at least in part, on the discovery that strategic modifications of non-human donor antibody CDR residue(s) can be used to humanize antibodies. Such modifications modulate the 3D structural fit between donor antibody CDRs and human acceptor antibody framework regions that comprise the variable domains of a CDR-grafted antibody. Whereas prior art methods of humanization have relied on making framework substitutions (in which selected human framework residues are backmutated to the corresponding amino acid residue present in the non-human donor antibody), the instant invention is based, at least in part, on a method of humanizing antibodies in which selected CDR residues, and optionally adjacent FR residues, are changed in order to accommodate differences in FR amino acid sequences between donor and acceptor antibodies.

8349324, Jan 8, 2013

Dec 1, 2009

12/628898

Alexey Alexandrovich Lugovskoy - Woburn MA, US
Karl Hanf - Billerica MA, US
You Li - Newton MA, US
Kenneth Simon - Cambridge MA, US
Herman Van Vlijmen - Mechelen, BE

Biogen Idec MA Inc. - Cambridge MA

A61K 39/395

4241331, 5303871

The present invention is based, at least in part, on the discovery that strategic modifications of non-human donor antibody CDR residue(s) can be used to humanize antibodies. Such modifications modulate the 3D structural fit between donor antibody CDRs and human acceptor antibody framework regions that comprise the variable domains of a CDR-grafted antibody. Whereas prior art methods of humanization have relied on making framework substitutions (in which selected human framework residues are backmutated to the corresponding amino acid residue present in the non-human donor antibody), the instant invention is based, at least in part, on a method of humanizing antibodies in which selected CDR residues, and optionally adjacent FR residues, are changed in order to accommodate differences in FR amino acid sequences between donor and acceptor antibodies.

20040031779, Feb 19, 2004

May 15, 2003

10/438533

Steven Cahill - Newton MA, US
Jonathan Ehrmann - Sudbury MA, US
You Li - Reading MA, US
Rainer Schramm - Everett MA, US
Kurt Pelsue - Wayland MA, US

B23K026/03

219/121830, 700/166000, 347/224000

A method of calibrating a laser marking system includes calibrating a laser marking system in three dimensions. The step of calibrating includes storing data corresponding to a plurality of heights. A position measurement of a workpiece is obtained to be marked. Stored calibration data is associated with the position measurement. A method and system for calibrating a laser processing or marking system is provided. The method includes: calibrating a laser marker over a marking field; obtaining a position measurement of a workpiece to be marked; associating stored calibration data with the position measurement; relatively positioning a marking beam and the workpiece based on at least the associated calibration data; and calibrating a laser marking system in at least three degrees of freedom. The step of calibrating includes storing data corresponding to a plurality of positions and controllably and relatively positioning a marking beam based on the stored data corresponding to the plurality of positions.

20040144760, Jul 29, 2004

May 15, 2003

10/438500

Steven Cahill - Newton MA, US
Jonathan Ehrmann - Sudbury MA, US
John Gillespie - Salem MA, US
You Li - Reading MA, US
Chris Nemets - Camarillo CA, US
Rainer Schramm - Everett MA, US
Kevin Sullivan - Everett MA, US
Walter Leslie - Westborough MA, US
Michael Woelki - Stow MA, US
Kurt Pelsue - Wayland MA, US

B23K026/00
B23K026/06

219/121680, 219/121830

A system for semiconductor wafer marking is provided. The system includes: (a) a first positioning subsystem for positioning a laser marking field relative to a wafer, the positioning along a first direction; (b) an alignment vision subsystem; (c) a laser marker including a laser for marking a location within the marking field with a laser marking beam; (d) a calibration program for calibrating at least one subsystem of the system; and (e) a controller. The marking field is substantially smaller than the wafer, and the laser marker includes a scan lens for optically maintaining a spot formed by the beam on the wafer within an acceptable range about the location within the marking field so as to avoid undesirable mark variations associated with wafer sag or other variations in depth within the field.

20060054608, Mar 16, 2006

Nov 4, 2005

11/266844

Steven Cahill - Newton MA, US
Jonathan Ehrmann - Sudbury MA, US
You Li - Reading MA, US
Rainer Schramm - Everett MA, US
Kurt Pelsue - Wayland MA, US

GSI Lumonics Corporation - Billerica MA

B23K 26/02

219121830, 219121690

A method of calibrating a laser marking system includes calibrating a laser marking system in three dimensions. The step of calibrating includes storing data corresponding to a plurality of heights. A position measurement of a workpiece is obtained to be marked. Stored calibration data is associated with the position measurement. A method and system for calibrating a laser processing or marking system is provided. The method includes: calibrating a laser marker over a marking field; obtaining a position measurement of a workpiece to be marked; associating stored calibration data with the position measurement; relatively positioning a marking beam and the workpiece based on at least the associated calibration data; and calibrating a laser marking system in at least three degrees of freedom. The step of calibrating includes storing data corresponding to a plurality of positions and controllably and relatively positioning a marking beam based on the stored data corresponding to the plurality of positions.

20080169183, Jul 17, 2008

Jan 16, 2007

11/623739

Richard J. Hertel - Boxford MA, US
You Chia Li - Reading MA, US
Philip J. McGrail - Northwood NH, US
Timothy J. Miller - Ipswich MA, US
Harold M. Persing - Westbrook ME, US
Vikram Singh - North Andover MA, US

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA

H05F 3/00

204164, 118723 I

A plasma source having a plasma chamber with metal chamber walls contains a process gas. A dielectric window passes a RF signal into the plasma chamber. The RF signal excites and ionizes the process gas, thereby forming a plasma in the plasma chamber. A plasma chamber liner that is positioned inside the plasma chamber provides line-of-site shielding of the inside of the plasma chamber from metal sputtered by ions striking the metal walls of the plasma chamber.

20210383995, Dec 9, 2021

Aug 20, 2021

17/407714

- Santa Clara CA, US
Frank Sinclair - Boston MA, US
Alexandre Likhanskii - Malden MA, US
Svetlana Radovanov - Brookline MA, US
Alexander Perel - Danvers MA, US
Graham Wright - Gloucester MA, US
Jay T. Scheuer - Rowley MA, US
Daniel Tieger - Manchester MA, US
You Chia Li - Reading MA, US
Jay Johnson - Gloucester MA, US
Tseh-Jen Hsieh - Rowley MA, US
Ronald Johnson - Gloucester MA, US

Applied Materials, Inc. - Santa Clara CA

H01J 27/02

An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having an opening formed in a front half thereof nearest the extraction aperture, wherein a rear half of the tubular cathode furthest from the extraction aperture is closed.

20210287872, Sep 16, 2021

Mar 12, 2020

16/817500

- Santa Clara CA, US
Frank Sinclair - Boston MA, US
Alexandre Likhanskii - Malden MA, US
Svetlana Radovanov - Brookline MA, US
Alexander Perel - Danvers MA, US
Graham Wright - Gloucester MA, US
Jay T. Scheuer - Rowley MA, US
Daniel Tieger - Manchester MA, US
You Chia Li - Reading MA, US
Jay Johnson - Gloucester MA, US
Tseh-Jen Hsieh - Rowley MA, US
Ronald Johnson - Gloucester MA, US

Applied Materials, Inc. - Santa Clara CA

H01J 37/08
H01J 37/317

An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.