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Yong Lu Lu

from Kendall Park, NJ
Age ~61

Yong Lu Phones & Addresses

  • Kendall Park, NJ
  • 52 Hampton Rd, Scarsdale, NY 10583 (914) 472-0343
  • 13 Brookline Rd, Scarsdale, NY 10583
  • Hinsdale, IL
  • Willowbrook, IL
  • Westchester, NY
  • Seattle, WA

Work

Company: The clinton group inc Address: 9 W 57Th St Fl 26, New York, NY 10019 Phones: (212) 825-0400 Position: Senior strategist Industries: Security Brokers, Dealers, and Flotation Companies

Resumes

Resumes

Yong Lu Photo 1

Yong Lu

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Location:
New York, NY
Industry:
Financial Services
Work:
Clinton Group Dec 1, 2006 - Oct 2018
Senior Portfolio Manager, Medical Doctor

Citadel Llc 1999 - 2006
Qr

University of Chicago 1992 - 1998
Assistant Professor
Education:
University of Science and Technology of China
Bachelors, Bachelor of Science, Physics
The Ohio State University
Doctorates, Doctor of Philosophy, Physics
Carnegie Mellon University - Tepper School of Business
Master of Science, Masters, Finance
Yong Lu Photo 2

Yong Lu

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Yong Lu Photo 3

Yong Lu

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Yong Lu Photo 4

Yong Lu

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Location:
United States
Yong Lu Photo 5

Researcher At Renaissance

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Location:
Greater New York City Area
Industry:
Investment Management
Yong Lu Photo 6

Executive Director At Ccs

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Position:
Executive Director at CCS
Location:
Greater New York City Area
Industry:
Philanthropy
Work:
CCS - New York, NY since Feb 2011
Executive Director

Committee of 100 - New York, NY Dec 2006 - Feb 2011
Director of Research

Carnegie Endowment for International Peace - Washington, DC Jul 2004 - Dec 2006
Program Manager
Education:
Yale University 2002 - 2004
Fudan University 1998 - 2002
Yong Lu Photo 7

Yong Lu

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Location:
United States

Business Records

Name / Title
Company / Classification
Phones & Addresses
Yong Lu
Senior Strategist
The Clinton Group Inc
Security Brokers, Dealers, and Flotation Comp...
9 W 57Th St Fl 26, New York, NY 10019
Yong Lu
President
SUNNY TRAIL INC
Intercity/Rural Bus Line
487 Spotswood Gravel Hl Rd, Monroe Township, NJ 08831
55 Devon Dr, East Brunswick, NJ 08816
487 Spotswood Grav Hl Rd, Monroe Twp, NJ 08831
Yong Lu
Director
Committee of 100
Nonprofit Organization Management · Civic/Social Association · Human Rights Organizations
257 Park Ave South, 19, New York, NY 10010
257 Park Ave S, New York, NY 10010
677 5 Ave, New York, NY 10022
(212) 371-6565
Yong Lu
President
EVERGREEN BUFFET, INC
Eating Place · Eating Places
109 Lafayette St #302  , New York, NY 10013
11001 Menaul Blvd Ne  , Albuquerque, NM 87112
11001 Menaul Blvd NE, Albuquerque, NM 87112
(505) 298-8400
Yong Lu
President
EVERGREEN RESTAURANT INC
109 Lafayette Blvd Ne  , New York, NY 10013
5220 Eubank Blvd Ne  , Albuquerque, NM 87111
Yong Qiang Lu
Principal
L & B LAUNDROMAT INC
Coin-Operated Laundry
835 Un St, Brooklyn, NY 11215
6812 Bay Pkwy, Brooklyn, NY 11204
(718) 789-9420
Yong Lu
Senior Strategist
CLINTON GROUP, INC
Security Broker/Dealer · Nonclassifiable Establishments · Investment Advice
601 Lexington Ave 51, New York, NY 10022
601 Lexington Ave RM 5101, New York, NY 10022
9 W 57 St, New York, NY 10019
(212) 825-0400, (212) 377-4185, (212) 825-0079
Yong Lu
President,Chairman
CHINA PROFESSIONAL SERVICE CENTER, INC
Yong Lu
Senior Strategist
The Clinton Group Inc
Security Brokers, Dealers, and Flotation Comp...
9 W 57Th St Fl 26, New York, NY 10019

Publications

Us Patents

Mram Architecture Using Offset Bits For Increased Write Selectivity

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US Patent:
6424561, Jul 23, 2002
Filed:
Jul 18, 2000
Appl. No.:
09/618504
Inventors:
Shaoping Li - Naperville IL
Theodore Zhu - Maple Grove MN
Anthony S. Arrott - Washington DC
Harry Liu - Plymouth MN
William L. Larson - Eden Prairie MN
Yong Lu - Plymouth MN
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
G11C 1100
US Classification:
365158, 365171, 365173
Abstract:
MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

Mram Architectures For Increased Write Selectivity

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US Patent:
6424564, Jul 23, 2002
Filed:
Sep 26, 2001
Appl. No.:
09/964217
Inventors:
Shaoping Li - Naperville IL
Theodore Zhu - Maple Grove MN
Anthony S. Arrott - Washington DC
Harry Liu - Plymouth MN
William L. Larson - Eden Prairie MN
Yong Lu - Plymouth MN
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
G11C 1100
US Classification:
365158, 365171, 365173, 365 66
Abstract:
MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

Mram Architectures For Increased Write Selectivity

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US Patent:
6522574, Feb 18, 2003
Filed:
Sep 25, 2001
Appl. No.:
09/964218
Inventors:
Shaoping Li - Naperville IL
Theodore Zhu - Maple Grove MN
Anthony S. Arrott - Washington DC
Harry Liu - Plymouth MN
William L. Larson - Eden Prairie MN
Yong Lu - Plymouth MN
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
G11C 1100
US Classification:
365158, 365171, 365173, 365 66
Abstract:
MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

Methods Of Increasing Write Selectivity In An Mram

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US Patent:
6756240, Jun 29, 2004
Filed:
Jul 7, 2003
Appl. No.:
10/614622
Inventors:
Shaoping Li - Naperville IL
Theodore Zhu - Maple Grove MN
Anthony S. Arrott - Washington DC
Harry Liu - Plymouth MN
William L. Larson - Eden Prairie MN
Yong Lu - Plymouth MN
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 2100
US Classification:
438 3, 438238, 438381
Abstract:
MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

Methods Of Increasing Write Selectivity In An Mram

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US Patent:
6791856, Sep 14, 2004
Filed:
Dec 20, 2002
Appl. No.:
10/327581
Inventors:
Shaoping Li - Naperville IL
Theodore Zhu - Maple Grove MN
Anthony S. Arrott - Washington DC
Harry Liu - Plymouth MN
William L. Larson - Eden Prairie MN
Yong Lu - Plymouth MN
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
G11C 506
US Classification:
365 63, 365158, 365171, 365173
Abstract:
MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

Methods Of Increasing Write Selectivity In An Mram

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US Patent:
6992918, Jan 31, 2006
Filed:
Jul 7, 2003
Appl. No.:
10/614709
Inventors:
Shaoping Li - Naperville IL, US
Theodore Zhu - Maple Grove MN, US
Anthony S. Arrott - Washington DC, US
Harry Liu - Plymouth MN, US
William L. Larson - Eden Prairie MN, US
Yong Lu - Plymouth MN, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
G11C 11/00
US Classification:
365158, 365171, 365173
Abstract:
MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.
Yong Lu Lu from Kendall Park, NJ, age ~61 Get Report