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Xuming X Xiong

from Canton, MI
Age ~59
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Also known as:
Xing Xuming
Related to:
Chaoxuan Xiong, 31
Connected to:
Abraham Xiong, 32Ali Xiong, 34Bennie Xiong, 32Bong Xiong, 33Candi T Xiong, 39Chance N Xiong, 36Chang Xiong, 52Chenou Xiong, 41Dallas P Xiong, 39Dan C Xiong, 38

Xuming Xiong Phones & Addresses

  • Canton, MI
  • Carleton, MI
  • Sugar Land, TX
  • Schenectady, NY
  • 2710 Grants Lake Blvd UNIT B, Sugar Land, TX 77479

Work

Company: Superpower inc 2006 Position: Principle scientist, leader of both ibad

Education

School / High School: Science & Technology Center- Carleton Jan 2012 Specialities: Career and education

Resumes

Resumes

Xuming Xiong Photo 1

Xuming Xiong Canton, MI

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Work:
SuperPower Inc

2006 to 2009
Principle Scientist, Leader of both IBAD
SuperPower Inc

2004 to 2006
Senior Scientist, Leader of both IBAD
SuperPower Inc
Schenectady, NY
Sep 2002 to 2004
Senior Scientist, Leader of IBAD
Birmingham University
Birmingham
Jan 2000 to Jul 2002
Research fellow/clean room manager
Chalmers University of Technology

Dec 1997 to Jan 2000
Postdoctoral researcher
Institute of Physics

Aug 1997 to Dec 1997
Assistant Researcher
Institute of Physics

Sep 1994 to Jul 1997
Institute of Physics

Aug 1990 to Aug 1994
Assistant Researcher
M. Sci. in Optics

Sep 1987 to Jul 1990
B. Sci. in Physics, Department of Physics, Zhejiang University
Hangzhou, CN
Sep 1983 to Jul 1987
Education:
Science & Technology Center
Carleton
Jan 2012 to Apr 2013
Career and education
University of Houston
2009 to Jan 2012
Superpower Inc
process in SuperPower's Development Centre in University of Houston
film

Publications

Us Patents

Superconductor Fabrication Processes

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US Patent:
7338683, Mar 4, 2008
Filed:
May 10, 2004
Appl. No.:
10/842619
Inventors:
Venkat Selvamanickam - Wynantskill NY, US
Xuming Xiong - Niskayuna NY, US
Assignee:
Superpower, Inc. - Schenectady NY
International Classification:
H01L 39/24
B05D 5/12
C23C 14/08
C23C 14/48
C23C 14/54
US Classification:
427 8, 427523, 427529, 427533, 427595, 505434, 505480
Abstract:
A method of forming a superconductive device is provided, including providing a substrate having a dimension ratio of not less than about 10, depositing a buffer film to overlie the substrate by ion beam assisted deposition utilizing and ion beam, monitoring spatial ion beam density of the ion beam over a target area, and depositing a superconductor layer to overlie the buffer film. Monitoring may be carried out by utilizing an ion detector having an acceptance angle of not less than 10.

Method Of Forming A Superconducting Article

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US Patent:
7445808, Nov 4, 2008
Filed:
Dec 28, 2005
Appl. No.:
11/320104
Inventors:
Xuming Xiong - Niskayuna NY, US
Venkat Selvamanickam - Wynantskill NY, US
Ping Hou - Schenectady NY, US
Assignee:
Superpower, Inc. - Schenectady NY
International Classification:
B05D 5/12
B05D 3/00
H01L 39/24
US Classification:
427 62, 427561, 427585, 29599, 505434, 505470, 505740, 20419215, 20419224
Abstract:
A superconducting article and a method of making a superconducting article is described. The method of forming a superconducting article includes providing a substrate, forming a buffer layer to overlie the substrate, the buffer layer including a first buffer film deposited in the presence of an ion beam assist source and having a uniaxial crystal texture. The method further includes forming a superconducting layer to overlie the buffer layer.

Biaxially-Textured Film Deposition For Superconductor Coated Tapes

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US Patent:
7718574, May 18, 2010
Filed:
Apr 8, 2004
Appl. No.:
10/821010
Inventors:
Xuming Xiong - Niskayuna NY, US
Venkat Selvamanickam - Wynantskill NY, US
Assignee:
SuperPower, Inc. - Schenectady NY
International Classification:
H01L 39/00
H01B 12/00
B05D 5/12
US Classification:
505300, 505430, 505473, 505730, 428701, 428702, 428698, 428930, 2041921, 20419224, 427595, 427596, 427 62
Abstract:
Methods for depositing, at a very high deposition rate, a biaxially-textured film on a continuously moving metal tape substrate are disclosed. These methods comprise: depositing a film on the substrate with a deposition flux having an oblique incident angle of about 5 to about 80 from the substrate normal, while simultaneously bombarding the deposited film using an ion beam at an ion beam incident angle arranged along either a best ion texture direction of the film or along a second best ion texture direction of the film, thereby forming the biaxially-textured film, wherein a deposition flux incident plane is arranged parallel to a direction along which the biaxially-textured film has a fast in-plane growth rate. Superconducting articles comprising a substrate, a biaxially-textured film deposited on said substrate by said methods above; and a superconducting layer disposed on the biaxially-textured film are also disclosed.

Anti-Epitaxial Film In A Superconducting Article And Related Articles, Devices And Systems

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US Patent:
7781377, Aug 24, 2010
Filed:
Dec 28, 2005
Appl. No.:
11/319971
Inventors:
Xuming Xiong - Niskayuna NY, US
Venkat Selvamanickam - Wynantskill NY, US
Ping Hou - Schenectady NY, US
Assignee:
Superpower, Inc. - Schenectady NY
International Classification:
H01L 39/24
US Classification:
505237, 428689, 428699, 428701, 505234, 505238
Abstract:
A superconducting article is provided that includes a substrate, an anti-epitaxial film over the substrate, a buffer film having biaxial crystal texture over the anti-epitaxial film, and a superconductor layer over the second buffer film. Also provided is a superconducting article as a tape, in a power cable, and a power transformer.

Superconducting Fault Current-Limiter With Variable Shunt Impedance

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US Patent:
8588875, Nov 19, 2013
Filed:
Jan 21, 2010
Appl. No.:
12/691325
Inventors:
Juan Carlos H. Llambes - Schenectady NY, US
Xuming Xiong - Sugar Land TX, US
Assignee:
Superpower, Inc. - Schenectady NY
International Classification:
H01L 39/00
US Classification:
505150, 174 153, 174 154, 174 155, 361 19
Abstract:
A superconducting fault current-limiter is provided, including a superconducting element configured to resistively or inductively limit a fault current, and one or more variable-impedance shunts electrically coupled in parallel with the superconducting element. The variable-impedance shunt(s) is configured to present a first impedance during a superconducting state of the superconducting element and a second impedance during a normal resistive state of the superconducting element. The superconducting element transitions from the superconducting state to the normal resistive state responsive to the fault current, and responsive thereto, the variable-impedance shunt(s) transitions from the first to the second impedance. The second impedance of the variable-impedance shunt(s) is a lower impedance than the first impedance, which facilitates current flow through the variable-impedance shunt(s) during a recovery transition of the superconducting element from the normal resistive state to the superconducting state, and thus, facilitates recovery of the superconducting element under load.

Methods For Surface-Biaxially-Texturing Amorphous Films

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US Patent:
20050039672, Feb 24, 2005
Filed:
Aug 19, 2003
Appl. No.:
10/643403
Inventors:
Venkat Selvamanickam - Wynantskill NY, US
Xuming Xiong - Niskayuna NY, US
International Classification:
C30B023/00
C30B025/00
C30B028/12
C30B028/14
US Classification:
117089000
Abstract:
Methods for biaxially-texturing a surface-region of an amorphous material are disclosed, comprising depositing an amorphous material onto a substrate, and supplying active oxygen near the substrate during ion beam bombardment of the amorphous material to create an amorphous material having a biaxially textured surface, wherein the ion beam bombardment occurs at a predetermined oblique incident angle. Methods for producing high-temperature coated superconductors are also disclosed, comprising depositing an amorphous buffer film onto a metal alloy substrate, bombarding a surface-region of the amorphous buffer film with an ion beam at an oblique incident angle while supplying active oxygen to the surface-region of the amorphous buffer film in order to create a biaxially textured surface-region thereon, and growing a superconducting film on the biaxially textured surface-region of the amorphous buffer film to create a high-temperature coated superconductor.

Superconductor Components

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US Patent:
20070238619, Oct 11, 2007
Filed:
Sep 6, 2005
Appl. No.:
11/221144
Inventors:
Xuming Xiong - Niskayuna NY, US
Assignee:
SUPERPOWER, INC. - Schenectady NY
International Classification:
H01L 39/24
H01B 12/00
US Classification:
505100000, 505237000, 505230000
Abstract:
A superconductor component is disclosed that includes a metal alloy substrate having a dimension ratio of not less than 10, a compliance layer overlying the substrate, the compliance layer being comprised of an amorphous or nanocrystalline ceramic material having an average grain size not greater than 50 nm, and an IBAD buffer layer overlying the compliance layer. The IBAD buffer layer has a biaxial crystal texture and comprises a material from the group consisting of fluorite type materials, pyrochlore type materials, rare earth C-type materials, non-cubic materials, and layer structured materials. A superconductor layer overlies the IBAD buffer layer
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Xuming X Xiong from Canton, MI, age ~59 Get Report