Xiewen Wang

61367281, Oct 24, 2000

Jan 5, 1996

8/583640

Xiewen Wang - Orange CT

Yale University - New Haven CT

H01L 2131

438773

A method of fabricating semiconductor devices including the steps of forming a silicon-based dielectric layer containing nitrogen having a concentration that is in a range of a fraction of a percent up to stoichiometric Si. sub. 3 N. sub. 4 ; and annealing the dielectric layer in a water vapor atmosphere.

60280123, Feb 22, 2000

Dec 4, 1996

8/760056

Xiewen Wang - Orange CT

Yale University - New Haven CT

H01L 2978

438779

A method of fabricating a semiconductor structure involving the steps of providing a SiC substrate, treating the SiC substrate with an N. sub. 2 O-containing plasma, and forming a dielectric layer on the surface of the pretreated SiC substrate. A semiconductor structure produced by the method above. An apparatus for forming a dielectric layer on a SiC substrate including a deposition chamber in which the SiC substrate is placed, a first valve that connects a first source providing N. sub. 2 O to the deposition chamber, a second valve that connects a second source providing reactants that form the dielectric layer to the deposition chamber, an energy source for producing an N. sub. 2 O-containing plasma from N. sub. 2 O released from the first source by the first valve, and a controller that programs providing power to the energy source and opening and closing the first and second valves into two phases. A first phase in which power is provided to the energy source, the first valve is kept open, and the second valve is kept closed so that the SiC substrate can be pretreated with N. sub.