Resumes
Resumes
Xiaohang Li Phones & Addresses
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Suwanee, GA
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Duluth, GA
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Johns Creek, GA
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Hillsboro, OR
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Atlanta, GA
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Bethlehem, PA
Publications
Us Patents
Broadband Light Emitting Diodes And Method For Producing Same
View pageUS Patent:
20120217472, Aug 30, 2012
Filed:
Dec 8, 2011
Appl. No.:
13/314685
Inventors:
Nelson Tansu - Bethlehem PA, US
Xiaohang Li - Atlanta GA, US
Hongping Zhao - Cleveland Heights OH, US
Guangyu Liu - Bethlehem PA, US
James Foster Gilchrist - Pasadena CA, US
Xiaohang Li - Atlanta GA, US
Hongping Zhao - Cleveland Heights OH, US
Guangyu Liu - Bethlehem PA, US
James Foster Gilchrist - Pasadena CA, US
Assignee:
Lehigh University - Bethlehem PA
International Classification:
H01L 33/04
H01L 33/32
H01L 33/32
US Classification:
257 13, 438 47, 257E33028, 257E33008
Abstract:
A III-Nitride semiconductor LED provides broadband light emission, across all or most of the visible light wavelength spectrum, and a method for producing same. The LED includes a polarization field management template that has a three-dimensional patterned surface. The surface may be patterned with an array of hemispherical cavities, which may be formed by growing the template around a temporary template layer of spherical or other crystals. The method involves growing a quantum well layer on the patterned surface. The topographical variations in the patterned surface of the template cause corresponding topographical variations in the quantum well layer. These variations in spatial orientation of portions of the quantum well layer cause the polarization field of the quantum well layer to vary across the surface of the LED, which leads to energy transition shifting that provides “white” light emission across a broad wavelength spectrum.