Xiao Juan Liu

6353644, Mar 5, 2002

May 3, 1999

09/303730

Lujing Cai - Tinton Falls NJ
Weimin Liu - Aberdeen NJ
Xiao Liu - Ocean NJ
Wenye Yang - Ocean NJ

Globespan, Inc. - Red Bank NJ

H04B 110

375350, 708300, 375285

Disclosed is a system and method for signal conditioning and equalization in the time domain, preferably in a discrete multi-tone (DMT) modem. The system preferably includes a processor operating according to operating logic stored on a memory although a dedicated logical circuit may be employed. The operating logic includes logic executing the function of a low pass filter having a predetermined cutoff frequency configured to process a digitized data signal having a first sample rate f , producing a filtered data signal at a second sample rate f. The operating logic further includes logic which executes the function of a time domain equalizer, the time domain equalizer being configured to process the filtered signal to shorten the impulse response of the channel while at the same time, the time domain equalizer down-samples the filtered signal from the second sample rate f , to a third sample rate f for further processing in the frequency domain.

6896729, May 24, 2005

Jul 3, 2002

10/190001

Xiao Gordon Liu - Fremont CA, US
Wei Guo Liu - Sunnyvale CA, US

AXT, Inc. - Fremont CA

C30B011/06

117 81, 117 82, 117 83, 117223

Group III-V, II-VI and related monocrystalline compounds are grown with a rigid support of a sealed ampoule, carbon doping and resistivity control, and thermal gradient control in a crystal growth furnace. A support cylinder provides structural support for the combined sealed ampoule crucible assembly, while low-density insulating material inside the support cylinder deters convection and conduction heating. Radiation channels penetrating the low-density material provide pathways for radiation heating into and out of the seed well and transition regions of the crystal growth crucible. A hollow core in the insulation material directly beneath the seed well provides cooling in the center of the growing crystal, which enables uniform, level growth of the crystal ingot and a flat crystal-melt interface which results in crystal wafers with uniform electrical properties.

7276787, Oct 2, 2007

Dec 5, 2003

10/729254

Daniel Charles Edelstein - White Plains NY, US
Paul Stephen Andry - Mohegan Lake NY, US
Leena Paivikki Buchwalter - Hopewell Junction NY, US
Jon Alfred Casey - Poughkeepsie NY, US
Sherif A. Goma - Hawthorne NY, US
Raymond R. Horton - Dover Plains NY, US
Gareth Geoffrey Hougham - Ossining NY, US
Michael Wayne Lane - Cortlandt Manor NY, US
Xiao Hu Liu - Croton on Hudson NY, US
Chirag Suryakant Patel - Peekskill NY, US
Edmund Juris Sprogis - Underhill VT, US
Michelle Leigh Steen - Danbury CT, US
Brian Richard Sundlof - Beacon NY, US
Cornelia K. Tsang - Mohegan Lake NY, US
George Frederick Walker - New York NY, US

International Business Machines Corporation - Armonk NY

H01L 23/48
H01L 23/498
H01L 21/4763
H01L 29/40
H01L 23/52

257698, 257E23067, 257E23075, 257E23011, 257E25013, 257E21597, 257E23006, 257E23172, 257E23174, 257774, 257773, 257702, 257680, 257700, 257758

A carrier structure and method for fabricating a carrier structure with through-vias each having a conductive structure with an effective coefficient of thermal expansion which is less than or closely matched to that of the substrate, and having an effective elastic modulus value which is less than or closely matches that of the substrate. The conductive structure may include concentric via fill areas having differing materials disposed concentrically therein, a core of the substrate material surrounded by an annular ring of conductive material, a core of CTE-matched non-conductive material surrounded by an annular ring of conductive material, a conductive via having an inner void with low CTE, or a full fill of a conductive composite material such as a metal-ceramic paste which has been sintered or fused.

7388273, Jun 17, 2008

Jun 14, 2005

11/152750

Geoffrey W. Burr - Cupertino CA, US
Chandrasekharan Kothandaraman - Hopewell Junction NY, US
Chung Hon Lam - Peekskill NY, US
Xiao Hu Liu - Briarcliff Manor NY, US
Stephen M. Rossnagel - Pleasantville NY, US
Christy S. Tyberg - Mahopac NY, US
Robert L. Wisnieff - Ridgefield CT, US

International Business Machines Corporation - Armonk NY

H01L 29/00

257529, 257530, 257E23149, 257E21592

A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.

7394089, Jul 1, 2008

Aug 25, 2006

11/467294

James P. Doyle - Bronx NY, US
Bruce G. Elmegreen - Golden Bridge NY, US
Lia Krusin-Elbaum - Dobbs Ferry NY, US
Chung Hon Lam - Peekskill NY, US
Xiao Hu Liu - Briarcliff Manor NY, US
Dennis M. Newns - Yorktown Heights NY, US
Christy S. Tyberg - Mahopac NY, US

International Business Machines Corporation - Armonk NY

H01L 47/00

257 4, 257209, 257529, 257E2917

An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

7417315, Aug 26, 2008

Dec 5, 2002

10/310532

Gareth Geoffrey Hougham - Ossining NY, US
S. Jay Chey - Ossining NY, US
James Patrick Doyle - Bronx NY, US
Xiao Hu Liu - Croton On Hudson NY, US
Christopher V. Jahnes - Upper Saddle River NJ, US
Paul Alfred Lauro - Brewster NY, US
Nancy C. LaBianca - Yalesville CT, US
Michael J. Rooks - Briarcliff Manor NY, US

International Business Machines Corporation - Armonk NY

H01L 21/302
B32B 5/22
G02B 26/00

257747, 257758, 257E2308, 257E23128, 4283179, 359291

A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called “smart materials” or “responsive materials. ” Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed. These devices have the technologically useful property of volumetrically expanding upon lowering of the device temperature below the reference or processing temperature.

7491965, Feb 17, 2009

May 28, 2008

12/127994

James P. Doyle - Bronx NY, US
Bruce G. Elmegreen - Golden Bridge NY, US
Lia Krusin-Elbaum - Dobbs Ferry NY, US
Chung Hon Lam - Peekskill NY, US
Xiao Hu Liu - Briarcliff Manor NY, US
Dennis M. Newns - Yorktown Heights NY, US
Christy S. Tyberg - Mahopac NY, US

International Business Machines Corporation - Armonk NY

H01L 47/00

257 4, 257209, 257529, 257E2917

An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

7556979, Jul 7, 2009

Oct 31, 2007

11/932385

Gareth Geoffrey Hougham - Ossining NY, US
S. Jay Chey - Ossining NY, US
James Patrick Doyle - Bronx NY, US
Xiao Hu Liu - Croton On Hudson NY, US
Christopher V. Jahnes - Upper Saddle River NJ, US
Paul Alfred Lauro - Brewster NY, US
Nancy C. LaBianca - Yalesville CT, US
Michael J. Rooks - Briarcliff Manor NY, US

International Business Machines Corporation - Armonk NY

H01L 21/00

438 53, 257E21254, 257E27008

A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called “smart materials” or “responsive materials. ” Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed. These devices have the technologically useful property of volumetrically expanding upon lowering of the device temperature below the reference or processing temperature.