Xiang Yang

20160293840, Oct 6, 2016

Jun 14, 2016

15/181761

- Philadelphia PA, US
Xiang Yang - Philadelphia PA, US

H01L 45/00
H01L 27/24

Disclosed herein are resistive switching devices having, e.g., an amorphous layer comprised of an insulating aluminum-based or silicon-based material and a conducting material. The amorphous layer may be disposed between two or more electrodes and be capable of switching between at least two resistance states. Circuits and memory devices including resistive switching devices are also disclosed, and a composition of matter involving an insulating aluminum-based or an silicon-based material and a conducting material. Also disclosed herein are methods for switching the resistance of an amorphous material.

20150029787, Jan 29, 2015

Oct 3, 2014

14/506177

- Philadelphia PA, US
Xiang Yang - Philadelphia PA, US

H01L 45/00
G11C 13/00

365163, 257 4, 438382

Disclosed herein are resistive switching devices having, e.g., an amorphous layer comprised of an insulating aluminum-based or silicon-based material and a conducting material. The amorphous layer may be disposed between two or more electrodes and be capable of switching between at least two resistance states. Circuits and memory devices including resistive switching devices are also disclosed, and a composition of matter involving an insulating aluminum-based or an silicon-based material and a conducting material. Also disclosed herein are methods for switching the resistance of an amorphous material.