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William I Powazinik

from Watertown, MA
Age ~48
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Also known as:
Bill Powazinik, Willi Powazinik, William S
Phone and address:
194 Waverley Ave, Watertown, MA 02472
(617) 393-2393
Related to:
Isaac Dicker, 59William UrquhartFrederick G BeavisShirley UrquhartCatherine G Beavis, 72Majorie Russell, 85
Connected to:
Danuta Powazka, 92Angela L Powderly, 56Betty A Powderly, 96Daniel T Powderly, 43Harry S Powderly, 86Jennifer S Powdermaker, 56Katherine A Powderly, 40Megan L Powderly, 40Meghan Powderly, 51Jimmy D Powders, 73

William Powazinik Phones & Addresses

  • 194 Waverley Ave, Watertown, MA 02472 (617) 393-2393
  • 147 Summer St, Watertown, MA 02472 (617) 744-1855
  • 27 Libby Ave, Marlborough, MA 01752 (508) 485-7756 (508) 509-5341
  • 293 Ash St, Reading, MA 01867
  • North Andover, MA
  • Waltham, MA
  • Lawrence, MA

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William Powazinik

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Publications

Us Patents

Structure For Indium Phosphide/Indium Gallium Arsenide Phosphide Buried Heterostructure Semiconductor

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US Patent:
52220915, Jun 22, 1993
Filed:
Jan 21, 1992
Appl. No.:
7/823499
Inventors:
Roger P. Holmstrom - Wayland MA
Edmund Meland - Chelmsford MA
William Powazinik - Marlborough MA
Assignee:
GTE Laboratories Incorporated - Waltham MA
International Classification:
H01S 319
US Classification:
372 46
Abstract:
A semiconductor laser having a high modulation bandwidth is made by utilizing an InGaAsP cap layer and an InGaAsP active layer of different crystal structure. Channels are anisotropically etched through the cap, cladding and active layers and partially through the buffer layer. The active and cap layers a laterally etched and a semi-insullating material is overlayed the sidewalls. A further etching leaves a thin wall of the semi-insulating material surrounding the active layer. 1. 3. mu. m InGaAsP lasers with 3 dB bandwidths of 24 GHz and intrinsic resonance frequencies in excess of 22 GHz have been successfully fabricated. This is the highest bandwidth ever reported for a semiconductor laser, and the highest resonance frequency for InGaAsP lasers. Excellent modulation efficiencies are observed to high frequencies.

Method For Growing Thin Epitaxial Layers Of A Non-Linear, Optically Active Material

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US Patent:
40010767, Jan 4, 1977
Filed:
Dec 11, 1974
Appl. No.:
5/531570
Inventors:
Lawrence B. Robinson - Cambridge MA
William Powazinik - Marlboro MA
Assignee:
GTE Laboratories Incorporated - Waltham MA
International Classification:
B01J 1720
C01D 1102
C01G 3500
C01G 5700
US Classification:
156624
Abstract:
Thin film epitaxial layers of mixed oxide compounds, or of solid solutions of two mixed oxides, are deposited on a suitable single crystal substrate. Growth is achieved by introducing the substrate into a crucible containing a saturated solution of the oxide(s) in a molten alkali metal halide having additional undissolved oxide(s) present in the crucible. Evaporation of the alkali metal halide solvent produces and/or maintains the supersaturated condition, which is relieved by epitaxial deposition of the oxide(s) onto the substrate. When two mixed oxides are dissolved in the solvent, the composition of the film is determined and fixed by the temperature of growth. To produce a thin film of a constant composition, growth is conducted isothermally. To produce a thin film with a graded composition throughout its thickness, growth is conducted by slowly cooling the temperature of the solution. Excess, undissolved oxide is kept in a region of the crucible such that the undissolved oxide is several degrees hotter than the liquid in contact with the substrate.

Monolithically Integrated Ridge Waveguide Semiconductor Optical Preamplifier

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US Patent:
50695614, Dec 3, 1991
Filed:
Jul 24, 1990
Appl. No.:
7/557276
Inventors:
William C. Rideout - Townsend MA
Roger P. Holmstrom - Wayland MA
Elliot Eichen - Arlington MA
William Powazinik - Marlborough MA
Joanne LaCourse - Hudson MA
John Schlafer - Wayland MA
Robert B. Lauer - Stow MA
Assignee:
GTE Laboratories Incorporated - Waltham MA
International Classification:
H01S 319
US Classification:
385 14
Abstract:
A monolithically integrated optical preamplifier comprises an amplifying region, an optical detection region for detecting amplified light, and an optically transparent and electrically insulating isolation region interposed between the amplifying and optical detection regions. The amplifying region achieves reduced facet reflectivity by being designed to have a large spot size, single-traverse mode waveguide amplifier oriented at an angle with respect to a crystal plane through the preamplifier. The isolation region is preferably an air gap.

Method For Fabricating Indium Phosphide/Indium Gallium Arsenide Phosphide Buried Heterostructure Semiconductor Lasers

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US Patent:
50827995, Jan 21, 1992
Filed:
Sep 14, 1990
Appl. No.:
7/583409
Inventors:
Roger P. Holmstrom - Wayland MA
Edmund Meland - Chelmsford MA
William Powazinik - Marlborough MA
Assignee:
GTE Laboratories Incorporated - Waltham MA
International Classification:
H01L 2120
US Classification:
437129
Abstract:
A semiconductor laser having a high modulation bandwidth is made by utilizing an InGaAsP cap layer and an InGaAsP active layer of different crystal structure. Channels are anisotropically etched through the cap, cladding and active layers and partially through the buffer layer. The active and cap layers a laterally etched and a semi-insulating material is overlaid the sidewalls. A further etching leaves a thin wall of the semi-insulating material surrounding the active layer. 1. 3. mu. m InGaAsP lasers with 3 dB bandwidths of 24 GHz and intrinsic resonance frequencies in excess of 22 GHz have been successfully fabricated. This is the highest bandwidth ever reported for a semiconductor laser, and the highest resonance frequency for InGaAsP lasers. Excellent modulation efficiencies are observed to high frequencies.

Monolithically Integrated Semiconductor Optical Preamplifier

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US Patent:
51034557, Apr 7, 1992
Filed:
May 9, 1990
Appl. No.:
7/521205
Inventors:
Elliot Eichen - Arlington MA
Roger P. Holmstrom - Wayland MA
Joanne LaCourse - Hudson MA
Robert B. Lauer - Stow MA
William Powazinik - Marlborough MA
William C. Rideout - Townsend MA
John Schlafer - Wayland MA
Assignee:
GTE Laboratories Incorporated - Waltham MA
International Classification:
H01S 319
US Classification:
372 50
Abstract:
An optical preamplifier includes a semiconductor optical amplifier monolithically integrated with an optical detector and electrically isolated from the detector by an isolation region. The isolation region consists of a low-loss, preferably transparent, insulating material whose index of refraction is matched to at least the refractive index of the amplifier, leading to reduced facet reflectivity at the amplifier output facet. Alternative device structures may include a waveguiding layer in the isolation region, a grating integrated with or following the optical amplifier, and a tuning region positioned between the amplifier and isolation region for filtering spontaneous emission.
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William I Powazinik from Watertown, MA, age ~48 Get Report