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William P Inhofer

from Plymouth, MN
Age ~67
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Also known as:
Bill Inhofer
Phone and address:
10330 41St Ave N, Minneapolis, MN 55441
(952) 476-6273
Related to:
Marla L Hedgspeth, 55Jeff Inhofer, 35Richard Davidson, 37Alicia Stickney, 30Kathleen Johnson, 83Stephanie Vagle, 53
Connected to:
Pamela B Inhoff, 78Beatrix M Inhulsen, 71Victor E Iniesta, 62Tomasz M Iniewicz, 44David M Iniga, 42Elizabeth Iniga, 39Eric T Inigo, 50Jason M Inigo, 40Julie S Inigo, 36Maritza Inigo, 71

William Inhofer Phones & Addresses

  • 10330 41St Ave N, Minneapolis, MN 55441 (952) 476-6273
  • 18125 27Th St, Minneapolis, MN 55447
  • Plymouth, MN
  • 18125 27Th Pl N, Plymouth, MN 55447

Resumes

Resumes

William Inhofer Photo 1

William Inhofer

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Location:
Greater Minneapolis-St. Paul Area
Industry:
Semiconductors
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William Inhofer

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Publications

Us Patents

Method For Transferring A Microelectronic Device To And From A Processing Chamber

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US Patent:
62511955, Jun 26, 2001
Filed:
Jul 12, 1999
Appl. No.:
9/351939
Inventors:
Thomas J. Wagener - Shorewood MN
John C. Patrin - Chanhassen MN
William P. Inhofer - Plymouth MN
Kevin L. Siefering - Excelsior MN
Assignee:
FSI International, Inc. - Chaska MN
International Classification:
B08B 100
B08B 500
US Classification:
134 7
Abstract:
An apparatus having a processing chamber for processing a semiconductor wafer under evacuated conditions that is capable of transfer of the wafer from the processing chamber under conditions that are substantially equal to the pressure of an adjacent environment. In a preferred embodiment, the processing chamber is pressurized and vented with a source of high purity dry gas that is diffused into the chamber through a diffuser to pressurize the processing chamber after processing of the wafer is completed. A chamber equalization port between the processing chamber and the adjacent environment is opened to maintain the pressure within the chamber at or slightly above the pressure of the adjacent environment, and the chamber valve is then opened. The wafer can then be removed from the processing chamber, and a new wafer can be inserted. The chamber is then sealed by closing the chamber valve and the equalization port, and the atmosphere within the processing chamber is evacuated to a desired level.

Processing System And Method For Providing A Heated Etching Solution

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US Patent:
20140264153, Sep 18, 2014
Filed:
Mar 13, 2014
Appl. No.:
14/209805
Inventors:
- Chaska MN, US
William P. Inhofer - Plymouth MN, US
Assignee:
TEL FSI, Inc. - Chaska MN
International Classification:
C09K 13/04
US Classification:
252 792, 15634511, 15634515
Abstract:
Embodiments of the invention provide a processing system and a method for processing with a heated etching solution. In one example, tight control over temperature and hydration level of an acidic etching solution is provided. According to one embodiment, the method includes forming the heated etching solution in a first circulation loop, providing the heated etching solution in the process chamber for treating a substrate, forming an additional heated etching solution in a second circulation loop, and supplying the additional heated etching solution to the first circulation loop. According to one embodiment, the processing system includes a process chamber for treating the substrate with the heated etching solution, a first circulation loop for providing the heated etching solution into the process chamber, and a second circulation loop for forming an additional heated etching solution and supplying the additional heated etching solution to the first circulation loop.

Processing System And Method For Providing A Heated Etching Solution

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US Patent:
20140277682, Sep 18, 2014
Filed:
Mar 13, 2014
Appl. No.:
14/209966
Inventors:
- Chaska MN, US
William P. Inhofer - Plymouth MN, US
David DeKraker - Burnsville MN, US
Assignee:
TEL FSI, Inc. - Chaska MN
International Classification:
G05B 19/418
H01L 21/67
US Classification:
700121, 15634515
Abstract:
A method and processing system are provided for independent temperature and hydration control for an etching solution used for treating a wafer in process chamber. The method includes circulating the etching solution in a circulation loop, maintaining the etching solution at a hydration setpoint by adding or removing water from the etching solution, maintaining the etching solution at a temperature setpoint that is below the boiling point of the etching solution in the circulation loop, and dispensing the etching solution into the process chamber for treating the wafer. In one embodiment, the dispensing includes dispensing the etching solution into a processing region proximate the wafer in the process chamber, introducing steam into an exterior region that is removed from the wafer in the process chamber, and treating the wafer with the etching solution and the steam.
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William P Inhofer from Plymouth, MN, age ~67 Get Report