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Wen J Chen

from Kent, WA
Age ~55
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Also known as:
Wen A Chen, Jesseca W Chen, Jessica Wen Chen, Jessica W Chen, Wen C Hen, David Chen
Related to:
Hui Chen, 56Hak Cheng WongHsiao P ShenXiaowei Jiang, 51Christine C Chen, 68Yuu ChenChialing ChenXiu L Bu, 60
Connected to:
Abre G Chen, 65Adele Chen, 52Adeline K Chen, 39Ai M Chen, 60Ai C Chen, 79Aiping Chen, 63Alen Y Chen, 68Alma Chen, 29Amanda Chen, 44Amanda T Chen, 63

Wen Chen Phones & Addresses

  • Kent, WA
  • West Chester, OH
  • 7823 Village Dr, Cincinnati, OH 45242
  • Blue Ash, OH
  • 6574 English Garden Way, Mason, OH 45040
  • Los Angeles, CA
  • Salt Lake City, UT
  • Blue Ridge, GA
  • Fort Worth, TX
  • Elk Grove Village, IL
  • Toledo, OH

Professional Records

License Records

Wen S Chen

License #:
110927 - Expired
Category:
Nursing
Issued Date:
Jan 22, 2008
Effective Date:
Nov 10, 2010
Expiration Date:
Oct 31, 2010
Type:
APRN-Nurse Practitioner

Wen S Chen

License #:
1799 - Expired
Category:
Nursing
Issued Date:
Sep 7, 2007
Effective Date:
Nov 7, 2007
Expiration Date:
Nov 7, 2007
Type:
APRN-Nurse Practitioner Temporary

Wen S Chen

License #:
110927 - Expired
Category:
Nursing
Issued Date:
Jan 22, 2008
Effective Date:
Nov 1, 2010
Type:
APRN-Nurse Practitioner/Practice

Wen S Chen

License #:
50039 - Expired
Category:
Nursing
Issued Date:
Aug 19, 1994
Effective Date:
Nov 8, 2010
Expiration Date:
Oct 31, 2010
Type:
Registered Nurse

Wen Chen

License #:
60442 - Active
Category:
Professional
Issued Date:
Jul 30, 2015
Expiration Date:
Sep 30, 2018

Real Estate Brokers

Wen Chen Photo 1

Wen Chen, Torrance CA

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Specialties:
Buyer's Agent
Listing Agent
Work:
Business Team
2293 190Th Street, Torrance, CA 90504
(310) 371-6945 (Office)

Lawyers & Attorneys

Wen Chen Photo 2

Wen Chen - Lawyer

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ISLN:
912037378
Law School:
National Taiwan University, LL.B., 1956
Wen Chen Photo 3

Wen Chen - Lawyer

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ISLN:
1000713918
Admitted:
2014

Medicine Doctors

Wen Chen Photo 4

Wen Y. Chen

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Specialties:
Ophthalmology
Work:
Quantum Vision
12 Professional Park Dr, Maryville, IL 62062
(618) 288-7266 (phone), (618) 288-4583 (fax)

Quantum Vision Center
2421 Corporate Ctr STE 102, Granite City, IL 62040
(618) 931-6980 (phone), (618) 931-2470 (fax)
Education:
Medical School
Medical University of South Carolina College of Medicine
Graduated: 1986
Procedures:
Eye Muscle Surgery
Corneal Surgery
Lens and Cataract Procedures
Ophthalmological Exam
Conditions:
Cataract
Acute Conjunctivitis
Diabetic Retinopathy
Glaucoma
Keratitis
Languages:
Chinese
English
Description:
Dr. Chen graduated from the Medical University of South Carolina College of Medicine in 1986. He works in Granite City, IL and 1 other location and specializes in Ophthalmology. Dr. Chen is affiliated with Alton Memorial Hospital, Anderson Hospital, Community Memorial Hospital, Gateway Regional Medical Center and HSHS St Josephs Hospital.
Wen Chen Photo 5

Wen Long Chen

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Specialties:
Anesthesiology
Wen Chen Photo 6

Wen Jer Chen

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Specialties:
Family Medicine
General Practice
Pediatrics
Education:
Taipei Medical University (1967)

Business Records

Name / Title
Company / Classification
Phones & Addresses
Wen Chen
Owner
Vancouver TCM
Health & Wellness
M33 970 Burrard St, Vancouver, BC V6Z 2R4
(604) 518-6455
Wen Qing Chen
President
Cwq Trading Inc
305 N Alhambra Ave, Monterey Park, CA 91755
5841 Firestone Blvd, South Gate, CA 90280
Wen Chen
President
Star-Max Group, Inc
Nonclassifiable Establishments
1400 S San Gabriel Blvd, San Gabriel, CA 91776
18958 Daisetta St, Whittier, CA 91748
Wen Chen
President
Worldwide Exchange Network, Inc
Nonclassifiable Establishments
11039 W Pico Blvd, Los Angeles, CA 90064
Wen Chen
Owner
Vancouver TCM
Health & Wellness
(604) 518-6455
Wen Chen
President
Pu Hua Ge Inc
2812 Loganrita Ave, Arcadia, CA 91006
Wen Chung Chen
Owner
Gantech Computers
Whol Computers/Peripherals Ret Computers/Software
1420 E Cypress St, Covina, CA 91724
(626) 915-5008
Wen J. Chen
President
Amm Tech USA Inc
Ret Misc Homefurnishings
14263 Proctor Ave, Whittier, CA 91746

Publications

Us Patents

Methods For Forming Thin-Film Heterojunction Solar Cells From I-Iii-Vi.sub. 2

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US Patent:
RE319686, Aug 13, 1985
Filed:
Jun 14, 1984
Appl. No.:
6/620637
Inventors:
Reid A. Mickelsen - Bellevue WA
Wen S. Chen - Seattle WA
Assignee:
The Boeing Company - Seattle WA
International Classification:
H01L 3106
H01L 3118
US Classification:
136260
Abstract:
An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI. sub. 2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2. 5 microns to about 5. 0 microns (. congruent. 2. 5. mu. m to. congruent. 5. 0. mu. m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U. S.

Methods For Forming Thin-Film Heterojunction Solar Cells From I-Iii-Vi.sub. 2

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US Patent:
43352669, Jun 15, 1982
Filed:
Dec 31, 1980
Appl. No.:
6/221761
Inventors:
Reid A. Mickelsen - Bellevue WA
Wen S. Chen - Seattle WA
Assignee:
The Boeing Company - Seattle WA
International Classification:
H01L 3106
H01L 3118
US Classification:
136260
Abstract:
An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI. sub. 2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2. 5 microns to about 5. 0 microns (. congruent. 2. 5. mu. m to. congruent. 5. mu. m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U. S.

Thin Films Of Mixed Metal Compounds

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US Patent:
45230510, Jun 11, 1985
Filed:
Sep 27, 1983
Appl. No.:
6/536395
Inventors:
Reid A. Mickelsen - Bellevue WA
Wen S. Chen - Seattle WA
Assignee:
The Boeing Company - Seattle WA
International Classification:
H01L 3106
H01L 3118
US Classification:
136260
Abstract:
A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

Cadmium Zinc Sulfide By Solution Growth

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US Patent:
51124106, May 12, 1992
Filed:
Aug 7, 1990
Appl. No.:
7/563494
Inventors:
Wen S. Chen - Seattle WA
Assignee:
The Boeing Company - Seattle WA
International Classification:
H01L 31072
H01L 3118
H01L 310328
US Classification:
136260
Abstract:
A process for depositing thin layers of a II-VI compound cadmium zinc sulfide (CdZnS) by an aqueous solution growth technique with quality suitable for high efficiency photovoltaic or other devices which can benefit from the band edge shift resulting from the inclusion of Zn in the sulfide. A first solution comprising CdCl. sub. 2 2. 5H. sub. 2 O, NH. sub. 4 Cl, NH. sub. 4 OH and ZnCl. sub. 2, and a second solution comprising thiourea ((NH. sub. 2). sub. 2 CS) are combined and placed in a deposition cell, along with a substrate to form a thin i. e. 10 nm film of CdZnS on the substrate. This process can be sequentially repeated with to achieve deposition of independent multiple layers having different Zn concentrations.

Mixed Ternary Heterojunction Solar Cell

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US Patent:
51415640, Aug 25, 1992
Filed:
Jan 17, 1991
Appl. No.:
7/644069
Inventors:
Wen S. Chen - Seattle WA
John M. Stewart - Seattle WA
Assignee:
The Boeing Company - Seattle WA
International Classification:
H01L 31072
H01L 3118
H01L 310328
US Classification:
136258
Abstract:
A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI. sub. 2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe. sub. 2 or CuIn(SSe). sub. 2.

Apparatus For Forming Thin-Film Heterojunction Solar Cells Employing Materials Selected From The Class Of I-Iii-Vi.sub.2 Chalcopyrite Compounds

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US Patent:
43924514, Jul 12, 1983
Filed:
Jul 2, 1981
Appl. No.:
6/278343
Inventors:
Reid A. Mickelsen - Bellevue WA
Wen S. Chen - Seattle WA
Assignee:
The Boeing Company - Seattle WA
International Classification:
C23C 1310
US Classification:
118690
Abstract:
Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI. sub. 2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2. 5 microns to about 5. 0 microns (. congruent. 2. 5. mu. m to. congruent. 5. 0. mu. m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.

I-Iii-Vi.sub.2 Based Solar Cell Utilizing The Structure Cuingase.sub.2 Cdzns/Zno

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US Patent:
50788043, Jan 7, 1992
Filed:
Aug 17, 1990
Appl. No.:
7/569411
Inventors:
Wen S. Chen - Seattle WA
John M. Stewart - Seattle WA
Assignee:
The Boeing Company - Seattle WA
International Classification:
H01L 31072
H01L 310328
H01L 3118
US Classification:
136260
Abstract:
A thin film I-III-VI. sub. 2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12. 5% at Air Mass 1. 5 illumination conditions and 10. 4% under AMO illumination can be achieved.

Isbn (Books And Publications)

Smelting Operations and Advances: Proceedings of the Copper 99-Cobre99 International Conference October 10-13, 1999, Phoenix, Arizona, USA

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Author

Wen Jeng Chen

ISBN #

0873394399

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Wen J Chen from Kent, WA, age ~55 Get Report