Wei Yen Yi

8325507, Dec 4, 2012

Sep 29, 2010

12/893825

Jianhua Yang - Palo Alto CA, US
Wei Yi - Mountain View CA, US
Michael Josef Stuke - Palo Alto CA, US
Shih-Yuan Wang - Palo Alto CA, US

Hewlett-Packard Development Company, L.P. - Houston TX

H01L 29/8605
H01L 21/04
G11C 11/21

365148, 257 1, 257E21363, 257E25014, 257E29326, 257E27047, 438382, 438385

A memristor includes a first electrode of a nanoscale width; a second electrode of a nanoscale width; and an active region disposed between the first and second electrodes. The active region has a both a non-conducting portion and a source of dopants portion induced by electric field. The non-conducting portion comprises an electronically semiconducting or nominally insulating material and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field. The non-conducting portion is in contact with the first electrode and the source of dopants portion is in contact with the second electrode. The second electrode comprises a metal reservoir for the dopants. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.

8331129, Dec 11, 2012

Sep 3, 2010

12/875423

Wei Yi - Mountain View CA, US
Frederick Perner - Santa Barbara CA, US
Matthew D. Pickett - San Francisco CA, US
Muhammad Shakeel Qureshi - Santa Clara CA, US

Hewlett-Packard Development Company, L. P. - Houston TX

G11C 11/00

365148, 365158

A memory array with write feedback includes a number of row lines intersecting a number of column lines, a memory element connected between one of the row lines and one of the column lines, an electrical condition supply to be selectively applied to one of the row lines; and a feedback control loop to control an electrical condition supplied by the electrical condition supply. A method for setting the state of a memory element within a memory array includes applying an electrical condition to the memory element within the memory array, sensing a resistive state of the memory element, and controlling the electrical condition based on the sensed resistive state to cause the memory element to reach a target resistance.

8336217, Dec 25, 2012

May 31, 2010

12/790970

Wei Yi - Mountain View CA, US
John Paul Strachan - Millbrae CA, US

Hewlett-Packard Development Company, L.P. - Houston TX

G01B 11/00
G01B 11/26

33286, 33228

A node placement apparatus, system and method employ an optical source to define a grid for placement of nodes. The node placement apparatus includes a structure that provides a predetermined height and the optical source positioned at the predetermined height. The optical source is configured to produce an optical beam having a predetermined declination angle. The optical beam is configured to provide illumination of a plurality of discrete points on a surface to define the grid. The system further includes the nodes. The method of node placement includes locating the optical source above a fixed point on and at the predetermined height above the surface, illuminating the plurality of discrete points with the optical beam, and positioning a node at a selected discrete point of the plurality of discrete points illuminated by the optical beam.

8503217, Aug 6, 2013

Apr 30, 2011

13/098453

Wei Yi - Mountain View CA, US
Gilberto Medeiros Ribeiro - Palo Alto CA, US
R. Stanley Williams - Portola Valley CA, US

Hewlett-Packard Development Company, L.P. - Houston TX

G11C 11/00

365148, 365158, 365171, 365173, 977935

A two-dimensional array of switching devices comprises a plurality of crossbar tiles. Each crossbar tile has a plurality of row wire segments intersecting a plurality of column wire segments, and a plurality of switching devices each formed at an intersection of a row wire segment and a column wire segment. The array has a plurality of lateral latches disposed in a plane of the switching devices. Each lateral latch is linked to a first wire segment of a first crossbar tile and a second wire segment of a second crossbar tile opposing the first wire segment. The lateral latch is operable to close or open to form or break an electric connection between the first and second wire segments.

8525553, Sep 3, 2013

Apr 30, 2012

13/459877

Wei Yi - Mountain View CA, US
Jianhua Yang - Palo Alto CA, US
Matthew D. Pickett - San Francisco CA, US
Minxian Max Zhang - Mountain View CA, US

Hewlett-Packard Development Company, L.P. - Houston TX

H03K 19/02

326135, 326132, 326134

In one example, an oxide-based negative differential resistance comparator circuit includes a composite NDR device that includes a first electrode, a first thin film oxide-based negative differential resistance (NDR) layer in contact with the first electrode and a central conductive portion. The composite NDR device also includes a second thin film oxide-based NDR layer disposed adjacent to the first NDR layer and a second electrode. A resistor may be placed in series with the composite NDR device and an electrical energy source can apply applying a voltage across the first electrode and second electrode. The composite NDR device produces a threshold based comparator functionality in the comparator circuit.

20020161828, Oct 31, 2002

Apr 30, 2001

09/845573

Michael Edison - Alameda CA, US
Wei Yi - El Cerrito CA, US
Erik Peterson - Alamo CA, US

G06F015/16
G06F009/44

709/203000, 709/315000

A software package comprises an application broker export module exportable from a first device to a second device, the application broker export module including an instance opening sub-module for opening a first instance of an application broker for managing operation of applications exported from the first device to the second device and for opening a second instance of the application broker for managing operation of applications between the second device and a third device. A method of communicating comprises the steps of forwarding to a first device a first request from a second device, the first request including an application broker software package, initiating at the first device a first instance of an application broker from the application broker software package, wherein the first instance includes an object to process the first request and establishing a first connection between the first and second devices in response to the first request. A second request is received at the first device a second request from a third device and a second instance of the application broker is initiated at the first device. A second connection is then established between the first and third devices in response to the second request.

20120001017, Jan 5, 2012

Jul 2, 2010

12/830183

John Paul STRACHAN - Millbrae CA, US
Wei Yi - Mountain View CA, US
Jianhua Yang - Palo Alto CA, US

B64B 1/00

244 24

An installation platform for deploying an earth-based sensor network utilizing a projected pattern from a height. The installation platform includes an aerostatic aircraft, at least one sensor-location projector, and a projector stabilizer. The sensor-location projector is coupled with the aerostatic aircraft, and is configurable to project the projected pattern including at least one sensor-location marker associated with a location for a sensor in the sensor network. The projector stabilizer is configurable for maintaining the sensor-location projector in a sufficiently static orientation relative to the location for the sensor to allow deployment of the sensor within a specified distance of the location on a surface of the earth from the sensor-location marker. A sensor-network-deployment system along with a method for deploying the sensor-network are also provided.

20120104346, May 3, 2012

Oct 29, 2010

12/916414

Wei Yi - Mountain View CA, US
Matthew D. Pickett - San Francisco CA, US
Gilberto Medeiros Ribeiro - Menlo Park CA, US

H01L 45/00
B82Y 99/00

257 4, 257E45003, 977943

A semiconductor device for providing heat management may include a first electrode with low metal thermal conductivity and a second electrode with low metal thermal conductivity. A metal oxide structure which includes a transition metal oxide (TMO) may be electrically coupled to the first electrode and second electrode and the metal oxide structure may be disposed between the first electrode and second electrode. An electrically insulating sheath with low thermal conductivity may surround the metal oxide structure.