Victor N Katsap

6400090, Jun 4, 2002

Mar 27, 2001

09/818799

Victor Katsap - Belle Mead NJ
James Alexander Liddle - Westfield NJ
Warren Kazmir Waskiewicz - Clinton NJ

Agere Systems Guardian Corp - Orlando FL

H01J 2948

31511181, 315 541, 313293, 2504923, 430296, 430942, 445 34

The specification describes a method and apparatus for electron beam lithography wherein a Wehnelt electron gun is modified to improve the uniformity of the electron beam. A mesh grid is applied to the Wehnelt aperture and the mesh grid functions as a multiple secondary emitter to produce a uniform beam flux over a wide area. The grid voltage of the modified gun is substantially lower than in a conventional Wehnelt gun, i. e. less than 100 volts, which can be switched conveniently and economically using semiconductor drive circuits.

6420714, Jul 16, 2002

Jun 9, 2000

09/591626

Victor Katsap - Belle Mead NJ
Eric Munro - London, GB
John Andrew Rouse - London, GB
Warren K Waskiewicz - Clinton NJ
Xieqing Zhu - London, GB

Agere Systems Guardian Corp. - Orlando FL

G21K 108

250396ML, 25049222, 250396 R

An apparatus for projection lithography is disclosed. The apparatus has at least one magnetic doublet lens. An aperture scatter filter is interposed between the two lenses of the magnetic doublet lens. The aperture scatter filter is in the back focal plane of the magnetic doublet lens system, or in an equivalent conjugate plane thereof. The apparatus also has two magnetic clamps interposed between the two lenses in the magnetic doublet lens. The clamps are positioned and configured to prevent substantial overlap of the magnetic lens fields. The magnetic clamps are positioned so that the magnetic fields from the lenses in the magnetic doublet lens do not extend to the aperture scatter filter.

6440620, Aug 27, 2002

Oct 4, 2000

09/679403

Victor Katsap - Belle Mead NJ
Eric Munro - London, GB
John Andrew Rouse - Surrey, GB
Warren K. Waskiewicz - Clinton NJ
Xieqing Zhu - London, GB

Agere Systems, Inc. - Allentown PA

G03C 500

430 30, 430296, 430942

An apparatus and method of focusing including a source for producing an electron beam, a mask and a projection column, through which the electron beam passes, and a wafer on which the electron beam is to be focused. The wafer is located in a plane where spherical aberrations of the projection column reduce the negative defocusing effect caused by chromatic aberrations in the projection column. The apparatus and method are applicable to general electron patterning tools, electron patterning tools where a thickness of the mask is smaller than an electron mean free path of the electron patterning tool, and the SCALPELâ electron patterning tool.

6448569, Sep 10, 2002

Jun 22, 1999

09/337741

Victor Katsap - Belle Mead NJ
Warren K. Waskiewicz - Clinton NJ

Agere Systems Guardian Corporation - Orlando FL

G21G 400

2504931, 250423 F

A bonded article including a single crystal cathode, for use in projection electron beam lithography, such as the SCALPELâ system. Because of its single crystalline structure, the single crystal cathode has only slightly misoriented grains. As a result, the single crystal cathode has few structural non-uniformities, and therefore a uniform emission characteristic. The single crystal cathode may be made of at least one of tantalum, tungsten, rhenium, and molybdenum. A local bonding technique for bonding a single crystal cathode with a conventional member. The local bonding technique does not recrystallize a center of the single crystal cathode, and therefore produces a bonded article which is usable in a projection electron lithography system, such as the SCALPELâ system. The local bonding technique may be laser welding and the single crystal cathode may be made of at least one of tantalum, tungsten, rhenium, and molybdenum. The member may be a conventional filament and the filament may be made of one of tungsten, a tungsten-rhenium alloy, and a tungsten-tantalum alloy.

6492647, Dec 10, 2002

May 7, 1999

09/310701

Victor Katsap - Belle Mead NJ
James Alexander Liddle - Westfield NJ
Warren Kazmir Waskiewicz - Clinton NJ

Agere Systems, Inc. - Allentown PA

H01J 3730

2504922, 25049223, 250423 F, 313308, 3131611, 313158, 21912127, 21912119

The specification describes a method and apparatus for electron beam lithography wherein a Wehnelt electron gun is modified to improve the uniformity of the electron beam. The bias on the Wehnelt aperture is reversed from the conventional bias so that it is biased positively with respect to the cathode. The Wehnelt opening is tapered with a disk emitter inserted into the taper. The result of these modifications is an electron beam output with low brightness which is highly uniform over the beam cross section.

6528799, Mar 4, 2003

Oct 20, 2000

09/692150

Victor Katsap - Belle Mead NJ
James A. Liddle - Westfield NJ
Masis Mkrtchyan - Gillette NJ
Stuart T. Stanton - Bridgewater NJ

Lucent Technologies, Inc. - Murray Hill NJ
eLITH LLC - New Providence NJ

H01J 37063

250398, 25049222, 25049223, 430296

An electron beam lithographic apparatus has an electron gun providing a beam of accelerated electrons, a mask stage adapted to hold a mask in a path of the beam of accelerated electrons, and a workpiece stage adapted to hold a workpiece in a path of electrons that have passed through the mask. The electron gun has a cathode having an electron emission surface, an anode adapted to be connected to a high-voltage power supply to provide an electric field between the cathode and the anode to accelerate electrons emitted from the cathode toward the anode, and a current-density-profile control grid disposed between the anode and the cathode. The current-density-profile control grid is configured to provide an electron gun that produces an electron beam having a non-uniform current density profile. A method of producing a micro-device includes generating a beam of charged particles having a non-uniform charged-particle current density, illuminating a mask with the beam of charged particles, and exposing a workpiece with charged particles from the beam of charged particles.

6620565, Sep 16, 2003

Jul 3, 2002

10/188030

Victor Katsap - Belle Mead NJ
Eric Munro - London, GB
John Andrew Rouse - Surrey, GB
Warren K. Waskiewicz - Clinton NJ
Xieqing Zhu - London, GB

Agere Systems, Inc. - Allentown PA

G03F 900

430 30, 430296, 430942, 2504923

An apparatus and method of focusing including a source for producing an electron beam, a mask and a projection column, through which the electron beam passes, and a wafer on which the electron beam is to be focused. The wafer is located in a plane where spherical aberrations of the projection column reduce the negative defocusing effect caused by chromatic aberrations in the projection column. The apparatus and method are applicable to general electron patterning tools, electron patterning tools where a thickness of the mask is smaller than an electron mean free path of the electron patterning tool, and the SCALPELâ electron patterning tool.

6815876, Nov 9, 2004

Jun 23, 1999

09/338520

Sungho Jin - Millington NJ
Victor Katsap - Belle Mead NJ
Warren K. Waskiewicz - Clinton NJ
Wei Zhu - Warren NJ

Agere Systems Inc. - Allentown PA

H01J 120

313310, 313346 DC, 313349, 313337

A cathode with an improved work function, for use in a lithographic system, such as the SCALPELâ system, which includes a buffer between a substrate and an emissive layer, where the buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth. The buffer layer may be a solid solution or a multiphase alloy. A method of making the cathode by depositing a buffer between a surface of the substrate and an emissive layer, where the deposited buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth.