Van Quynh Ton

7062141, Jun 13, 2006

Dec 12, 2002

10/319417

Rong Pan - San Jose CA, US
Van Q. Ton - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

G02B 6/10

385129, 385131, 65386

Undercladding and uppercladding layers that form part of an optical waveguide are deposited with a thermal CVD technique. The optical waveguide has a structure in which optical cores are formed over the undercladding layer and in which the uppercladding layer is formed over and between the optical cores. Generally, the optical cores have a refractive index greater than a refractive index of the cladding layers. A borophosphosilicate-glass layer may be used as one or both of the cladding layers. Thick cladding layers may be formed by cyclically depositing and annealing portions of the layer.

20050136684, Jun 23, 2005

Dec 23, 2003

10/746695

Kevin Mukai - Santa Clara CA, US
Kimberly Branshaw - Santa Clara CA, US
Zheng Yuan - Fremont CA, US
Xinyun Xia - San Jose CA, US
Xiaolin Chen - San Jose CA, US
Dongqing Li - Santa Clara CA, US
M. Karim - San Jose CA, US
Van Ton - San Jose CA, US
Cary Ching - Sunnyvale CA, US
Nitin Ingle - Campbell CA, US

APPLIED MATERIALS, INC. - Santa Clara CA

H01L021/31
H01L021/469

438778000, 438788000

A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.

6621883, Sep 16, 2003

Jan 4, 2000

09/476922

Van T. Ton - San Jose CA

Seagate Technology LLC - Scotts Valley CA

H04L 2300

375377, 713400, 327141

A method for data detection includes signal transition detection of an input signal. When a falling edge is detected, a rising edge in a negative signal is generated. When a rising edge is detected, a rising edge in a positive signal is generated. Data is latched from the bus for the rising edge of the positive/negative edge signal. A falling edge in the positive/negative edge signal is generated after a period of time. The steps are repeated for each detected signal transition. A data detection apparatus includes a QAEDN to generate a rising edge on the negative signal for detected falling edges. A memory unit latches data from the bus for rising edges of the negative signal. A QAEDP generates a rising edge on a positive edge signal in response to detected rising edges. A memory unit latches data from the bus for rising edges of the positive signal.