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Tsurugi Sudo

from Cupertino, CA
Age ~56
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Also known as:
Sudoh Tsurugi
Phone and address:
10721 Carver Dr, Cupertino, CA 95014
Related to:
Sayuri Sudo, 54
Connected to:
Maryann Sudo, 82Momoko Sudo, 56Tomoaki Sudo, 58Yuri Sudo, 45Karla S Sudock, 60Robert S Sudock, 77Adam Sudol, 99Alison L Sudol, 40Amy A Sudol, 57Anthony Sudol, 60

Tsurugi Sudo Phones & Addresses

  • 10721 Carver Dr, Cupertino, CA 95014
  • 210 Hudson Ave, Pasadena, CA 91101 (626) 449-3151
  • San Jose, CA
  • Santa Clara, CA
  • 2400 Ridgeview Dr, Chino Hills, CA 91709 (909) 393-1042
  • Diamond Bar, CA
  • Sunnyvale, CA
  • El Monte, CA
  • Arcadia, CA

Work

Company: Finisar Nov 2007 Position: Director, design engineering

Education

Degree: Ph.D. School / High School: The University of Tokyo 1989 to 1997 Specialities: Electronic Engineering

Skills

Engineering Management • Semiconductor Lasers • Device Characterization • Failure Analysis • Product Development

Industries

Telecommunications

Resumes

Resumes

Tsurugi Sudo Photo 1

Senior Director, Design Engineering

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Location:
1389 Moffett Park Dr, Sunnyvale, CA 94089
Industry:
Telecommunications
Work:
Finisar since Nov 2007
Director, Design Engineering
Finisar Dec 2005 - Oct 2007
Senior Development Engineer
Adtech Optics Jul 2003 - Dec 2005
Senior Opto-Electronics Engineer
Demeter (a subsidiary of Finisar) Dec 2001 - Jun 2003
Senior Optoelectronics Engineer
Novalux Sep 2001 - Nov 2001
Device Engineer
Education:
The University of Tokyo 1989 - 1997
Ph.D., Electronic Engineering* Ph.D. thesis under Prof. Yoshiaki Nakano: wavelength trimming technology for multiple-wavelength semiconductor laser arrays * M.E. thesis under Prof. Yoshiaki Nakano: dynamic property of absorptive-grating gain-coupled distributed-feedback semiconductor lasers * B.E. thesis under Prof. Kazuro Kikuchi: shot noise reduction by intra-cavity second harmonic generation Awards/Fellowships * Research fellowships for young scientists from the Japan Society for the Promotion of Science * The 1st Young Scientist Award for the Presentation of an Excellent Paper from the Japan Society of Applied Physics * LEOS'96 Best Student Paper Award
Skills:
Engineering Management
Semiconductor Lasers
Device Characterization
Failure Analysis
Product Development

Publications

Us Patents

Semiconductor Laser Having Low Stress Passivation Layer

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US Patent:
7567601, Jul 28, 2009
Filed:
May 15, 2007
Appl. No.:
11/749047
Inventors:
Tsurugi Sudo - San Jose CA, US
Ashish Verma - San Jose CA, US
Jing Chai - Fremont CA, US
Sumesh Mani K. Thiyagarajan - Fremont CA, US
Assignee:
Finisar Corporation - Sunnyvale CA
International Classification:
H01S 5/00
US Classification:
372 4301, 372 4501, 372 4601
Abstract:
A laser diode having a composite passivation layer configured to control parasitic capacitance, especially in high speed laser applications, is disclosed. In one embodiment, a ridge waveguide laser is disclosed and includes: a substrate, an active layer disposed on the substrate, a ridge structure disposed on the active layer, and a contact layer disposed on the ridge structure. A composite passivation layer is disposed substantially laterally to the ridge structure. The composite passivation layer includes a silicon nitride bottom layer, a silicon nitride top layer, and a silicon dioxide middle layer interposed between the bottom and top layers. The passivation layers possess differing stress components that, when combined, cancel out the overall mechanical stress of the passivation layer. This enables relatively thick passivation layers to be employed in high speed laser diodes without increasing the risk of layer stress cracking and laser damage.

Laser Facet Pre-Coating Etch For Controlling Leakage Current

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US Patent:
7763485, Jul 27, 2010
Filed:
May 15, 2007
Appl. No.:
11/749061
Inventors:
Roman Dimitrov - San Jose CA, US
Ashish Verma - San Jose CA, US
Tsurugi Sudo - San Jose CA, US
Scott Lehmann - Oakland CA, US
Assignee:
Finisar Corporation - Sunnyvale CA
International Classification:
H01L 21/00
US Classification:
438 42, 257E21119, 257E21131, 438 16
Abstract:
A method for etching facets of a laser die prior to coating in such a way as to control the formation of oxides and metallic films on the facet is disclosed. In one embodiment, the method includes placing a wafer on which the laser is included in the interior volume of an etching chamber. Nitrogen is introduced into the interior volume to define a nitrogen-rich environment. The laser facet is then etched in the nitrogen-rich environment with argon delivered from an ion gun. In another embodiment, the method includes placing the laser in an ion beam etching chamber, then physically etching the facet of the laser with an ion beam that includes an argon/nitrogen mixture. The laser facet(s) can then be coated as desired. The etching method reduces the incidence of leakage current during operation of the laser die caused by metallic film formation on the facet before coating.

High-Power Optical Burn-In

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US Patent:
7795896, Sep 14, 2010
Filed:
Aug 13, 2008
Appl. No.:
12/190914
Inventors:
Robert W. Herrick - San Jose CA, US
Charles B. Roxlo - Saratoga CA, US
T. H. Ola Sjolund - Morgan Hill CA, US
Tsurugi Sudo - San Jose CA, US
Assignee:
Finisar Corporation - Sunnyvale CA
International Classification:
G01R 31/26
US Classification:
324765, 324760
Abstract:
Semiconductor lasers are aged to identify weak or flawed devices, resulting in improved reliability of the remaining devices. The lasers can be aged using a high-power optical burn-in that includes providing a high drive current to the lasers for a period of time, and maintaining the ambient temperature of the lasers at a low temperature. After the high-power optical burn-in, the output of the lasers can be measured to determine if the lasers are operating within specifications. Those that are not can be discarded, while those that are can be further aged using a high-temperature thermal burn-in that includes providing a drive current to the lasers while maintaining the ambient temperature of the lasers at a high-temperature.

Distributed Feedback Laser Having Enhanced Etch Stop Features

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US Patent:
7813395, Oct 12, 2010
Filed:
Jun 12, 2008
Appl. No.:
12/138361
Inventors:
Ashish K. Verma - San Jose CA, US
Tsurugi Sudo - San Jose CA, US
Sumesh Mani K. Thiyagarajan - Fremont CA, US
David Bruce Young - Oakland CA, US
Assignee:
Finisar Corporation - Sunnyvale CA
International Classification:
H01S 5/00
US Classification:
372 4301, 372 4601, 372 5011, 372 96
Abstract:
In one example embodiment, a DFB laser includes a substrate, an active region positioned above the substrate, and a grating layer positioned above the active region. The grating layer includes a portion that serves as a primary etch stop layer. The DFB laser also includes a secondary etch stop layer located either above or below the grating layer, and a spacer layer interposed between the grating layer and the active region.

Cleaving Edge-Emitting Lasers From A Wafer Cell

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US Patent:
7858493, Dec 28, 2010
Filed:
Feb 22, 2008
Appl. No.:
12/036157
Inventors:
Weizhong Sun - Fremont CA, US
Tsurugi Sudo - San Jose CA, US
Jing Chai - Fremont CA, US
Assignee:
Finisar Corporation - Sunnyvale CA
International Classification:
H01L 21/46
US Classification:
438455, 438456, 438457, 438458, 438459, 438460, 438461, 438462, 438463, 438113, 438114, 438120
Abstract:
In one example embodiment, a process for cleaving a wafer cell includes several acts. First a wafer cell is affixed to an adhesive film. Next, the adhesive film is stretched substantially uniformly. Then, the adhesive film is further stretched in a direction that is substantially orthogonal to a predetermined reference direction. Next, the wafer cell is scribed to form a notch that is oriented substantially parallel to the predetermined reference direction. Finally, the wafer cell is cleaved at a location substantially along the notch.

Methods For Testing Lasers Using Optical Burn-In

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US Patent:
8067949, Nov 29, 2011
Filed:
Sep 13, 2010
Appl. No.:
12/881070
Inventors:
Robert W. Herrick - San Jose CA, US
Charles B. Roxlo - Saratoga CA, US
T. H. Ola Sjolund - Morgan Hill CA, US
Tsurugi Sudo - San Jose CA, US
Assignee:
Finisar Corporation - Sunnyvale CA
International Classification:
G01R 31/10
US Classification:
32475005, 32476201
Abstract:
Semiconductor lasers are aged to identify weak or flawed devices, resulting in improved reliability of the remaining devices. The lasers can be aged using a high-power optical burn-in that includes providing a high drive current to the lasers for a period of time, and maintaining the ambient temperature of the lasers at a low temperature. After the high-power optical burn-in, the output of the lasers can be measured to determine if the lasers are operating within specifications. Those that are not can be discarded, while those that are can be further aged using a high-temperature thermal burn-in that includes providing a drive current to the lasers while maintaining the ambient temperature of the lasers at a high-temperature.

Method For Applying Protective Laser Facet Coatings

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US Patent:
8277877, Oct 2, 2012
Filed:
May 15, 2007
Appl. No.:
11/749052
Inventors:
Roman Dimitrov - San Jose CA, US
Ashish Verma - San Jose CA, US
Tsurugi Sudo - San Jose CA, US
Scott Lehmann - Oakland CA, US
Assignee:
Finisar Corporation - Sunnyvale CA
International Classification:
B05D 5/06
US Classification:
427162, 427209, 427471, 427596, 372 4901, 118730
Abstract:
A method for depositing protective coatings on front and rear facets of an optical device, such as a laser die, is disclosed. The protective coatings help prevent laser facet damage common to laser dies manufactured using known processes. In one embodiment, the method for coating the laser die includes placing the laser in an evacuated coating chamber before applying a first coating portion to a first facet of the laser. The first coating portion is applied to the first facet so as to form a protective covering thereon, but is applied at a coating energy that minimizes damage to the as-yet uncoated second facet. The laser is then rotated within the coating chamber, and a full coating is applied to a second facet of the laser. The laser is again rotated, and a full coating is applied atop the first coating portion to the first facet of the laser.

Distributed Feedback Laser Having Enhanced Etch Stop Features

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US Patent:
8477817, Jul 2, 2013
Filed:
Oct 11, 2010
Appl. No.:
12/902000
Inventors:
Ashish K. Verma - San Jose CA, US
Tsurugi Sudo - San Jose CA, US
Sumesh Mani K. Thiyagarajan - Fremont CA, US
David Bruce Young - Oakland CA, US
Assignee:
Finisar Corporation - Sunnyvale CA
International Classification:
H01S 5/00
US Classification:
372 4301, 372 4601, 372 5011, 372 96
Abstract:
In one example embodiment, a DFB laser includes a substrate, an active region positioned above the substrate, and a grating layer positioned above the active region. The grating layer includes a portion that serves as a primary etch stop layer. The DFB laser also includes a secondary etch stop layer located either above or below the grating layer, and a spacer layer interposed between the grating layer and the active region.
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Tsurugi Sudo from Cupertino, CA, age ~56 Get Report