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Tsukasa Azuma

from Hopewell Junction, NY
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Connected to:
Jennifer T Azuma, 62Yumiko Azuma, 52Kofi Azumah, 68Thomas W Azumbrado, 72A N Azumi, 74Ihuoma Azunna, 44Cheryl R Azurdia, 75David Azurdia, 53Jonathan A Azurdia, 34Manuel D Azurdia, 50

Tsukasa Azuma Phones & Addresses

  • Hopewell Junction, NY
  • Poughkeepsie, NY

Publications

Us Patents

Fabrication Process Using A Multi-Layer Antireflective Layer

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US Patent:
59981008, Dec 7, 1999
Filed:
Sep 5, 1997
Appl. No.:
8/924652
Inventors:
Tsukasa Azuma - Poughkeepsie NY
Tokuhisa Ohiwa - Fishkill NY
Tetsuo Matsuda - Poughkeepsie NY
David M. Dobuzinsky - Hopewell Junction NY
Katsuya Okumura - Poughkeepsie NY
Assignee:
Kabushiki Kaisha Toshiba - Kawasaki
International Classification:
G03F 700
US Classification:
430313
Abstract:
A fabrication process includes a step of providing a substrate to be fabricated. A multi-layer antireflective layer is then formed on the substrate. A patterned resist having a thickness less than 850 nanometers is formed on the multi-layer antireflective layer and the substrate is fabricated using the patterned resist as a mask.

Top Antireflective Coating Material And Its Process For Duv And Vuv Lithography Systems

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US Patent:
58798536, Mar 9, 1999
Filed:
Jan 18, 1996
Appl. No.:
8/588085
Inventors:
Tsukasa Azuma - Poughkeepsie NY
Assignee:
Kabushiki Kaisha Toshiba - Kawasaki
International Classification:
G03F 7023
G03C 1825
US Classification:
430166
Abstract:
This invention relates to a top antireflective layer (TAR) which is preferably transparent to some extent and has high-etch resistance and low reflectivity at the photoresist/TAR interface. The TAR also significantly reduces CD variation in exposed photoresist film. The TAR of the present invention comprises an indanone or glutarimide copolymer, a solvent, and an additive sensitizer having an orthodiazonaphthoquinone structure. The present invention is also related to a process of forming a semiconductor by applying a photoresist layer to the surface of a substrate, forming a top antireflection layer on the photoresist layer, and selectively exposing the substrate to ultraviolet light, wherein the TAR comprises an indanone or glutarimide copolymer, a solvent, and an additive sensitizer with an orthodiazonaphthoquinone structure.

Fabrication Process Using A Thin Resist

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US Patent:
57597464, Jun 2, 1998
Filed:
May 24, 1996
Appl. No.:
8/653426
Inventors:
Tsukasa Azuma - Poughkeepsie NY
Tokuhisa Ohiwa - Fishkill NY
Tetsuo Matsuda - Poughkeepsie NY
David M. Dobuzinsky - Hopewell Junction NY
Katsuya Okumura - Poughkeepsie NY
Assignee:
Kabushiki Kaisha Toshiba - Kawasaki
International Business Machines Corp. - Armonk NY
International Classification:
G03F 726
US Classification:
430313
Abstract:
A fabrication process includes a step of providing a substrate to be fabricated. A multi-layer antireflective layer is then formed on the substrate. A patterned resist having a thickness less than 850 nanometers is formed on the multi-layer antireflective layer and the substrate is fabricated using the patterned resist as a mask.

Independently Controllable Shutters And Variable Area Apertures For Off Axis Illumination

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US Patent:
57126984, Jan 27, 1998
Filed:
Mar 4, 1996
Appl. No.:
8/610770
Inventors:
Bernhard Poschenrieder - Poughkeepsie NY
Takashi Sato - Fishkill NY
Tsukasa Azuma - Poughkeepsie NY
Assignee:
Siemens Aktiengesellschaft - Munich
Kabushiki Kaisha Toshiba - Kanagawa-ken
International Classification:
G03B 2772
US Classification:
355 71
Abstract:
New types of apertures to vary the size and shape of the aperture area without the need to change the whole aperture plate in off axis lithography. The off axis illumination apertures allow the size and shape of apertures to be changed without having to change the aperture plates for each step in the lithographic process. The aperture plate is fitted with simple shutter mechanisms that allow the ready adjustment of the aperture openings.

Avoidance Of Pattern Shortening By Using Off Axis Illumination With Dipole And Polarizing Apertures

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US Patent:
58152474, Sep 29, 1998
Filed:
Sep 21, 1995
Appl. No.:
8/531767
Inventors:
Bernhard Poschenrieder - Poughkeepsie NY
Takashi Sato - Fishkill NY
Tsukasa Azuma - Poughkeepsie NY
Assignee:
Siemens Aktiengesellschaft - Munich
Kabushiki Kaisha Toshiba - Kanagawa-Ken
International Classification:
G03B 2742
G03B 2754
G03B 2772
US Classification:
355 71
Abstract:
A system and method of avoiding pattern shortening without resorting to generating a mask with a bias solve the direction dependent differences in exposure behavior in photolithography processes in the manufacture of semiconductor devices. Instead of designing a biased mask to solve the exposure problem, the pattern shortening effect is avoided by influencing the exposure process itself. By using an off axis illumination technique, the exposure is separated into different directions. In one embodiment, off axis illumination is applied in combination with special dipole apertures (i. e. , two openings). The exposure is done in two or more parts, whereby the aperture is twisted between exposures. In another embodiment, off axis illumination is used in combination with special polarizer apertures. As with the first embodiment, the exposure is done in two or more parts, but in this case with differently polarized light.
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Tsukasa Azuma from Hopewell Junction, NY Get Report