Toshiyuki Uno

7230695, Jun 12, 2007

Jul 8, 2004

10/885641

Yoshiaki Ikuta - Guilderland NY, US
Toshiyuki Uno - Guilderland NY, US

Asahi Glass Company, Ltd. - Tokyo

G01N 21/00
G03H 3/00

3562372, 430 5

A defect repair device includes a defect inspection unit configured to find a size of a protruding defect on a front surface of a multi-layer film having a rear surface opposite to the front surface, a calculation unit configured to calculate a repair energy so as to repair the protruding defect based on the size of the protruding defect found by the defect inspection unit, an energy supplier, and an energy controller configured to control the energy supplier to supply the repair energy calculated by the calculation unit to a portion in the multi-layer film from the rear surface of the multi-layer film so as to cause a decrease in a volume of the portion and retract the protruding defect into the multi-layer film.

7678511, Mar 16, 2010

Jan 12, 2006

11/330205

Yoshiaki Ikuta - Guilderland NY, US
Toshiyuki Uno - Guilderland NY, US
Ken Ebihara - Matsudo, JP

Asahi Glass Company, Limited - Tokyo

G03F 1/00

430 5

There are provided a substrate with a reflective layer and an EUV mask blank, which can prevent particles from adhering to a surface of the reflective layer or an absorbing layer, or into a reflective layer or an absorbing layer during formation thereof by eliminating electrical connection between a film formed on a front surface of the substrate and a film formed on a rear surface of the substrate. A substrate with a reflective layer, which is usable to fabricate a reflective mask blank for EUV lithography, comprising a chucking layer formed on a rear surface opposite a surface with the reflective layer formed thereon, the chucking layer serving to chuck and support the substrate by an electrostatic chuck, wherein the reflective layer has no electrical connection to the chucking layer.

7712333, May 11, 2010

Mar 29, 2006

11/391343

Toshiyuki Uno - Guilderland NY, US
Yoshiaki Ikuta - Schenectady NY, US
Mika Yokoyama - Yokohama, JP
Ken Ebihara - Chiyoda-ku, JP

Asahi Glass Company, Limited - Tokyo

C03C 17/02

65 28, 65 601, 65 605, 65 36, 65102, 427140, 427375

To provide a method for smoothing a surface of a glass substrate having a concave defect, such as a pit or a scratch. A method for smoothing a surface of a glass substrate having a concave defect thereon, comprising: forming a film on the surface of the glass substrate having the concave defect by a dry deposition method, the film comprising a glass material having a fluid point Tf of 150 C. or above and of not higher than a strain point Ts ( C. ) of the glass substrate; and heating the film of the glass material at a temperature of not lower than Tf and not higher than Ts to put the film in such state that the film of the glass material can flow so as to bury the concave defect, followed by cooling the film of the glass material, thereby to smooth the surface of the glass substrate having the concave defect.

7960077, Jun 14, 2011

Jan 27, 2010

12/694860

Yoshiaki Ikuta - Guilderland NY, US
Toshiyuki Uno - Guilderland NY, US
Ken Ebihara - Matsudo, JP

Asahi Glass Company, Limited - Tokyo

G03F 1/00

430 5

A reflective mask blank for EUV lithography including a substrate having a front surface and a rear surface, a reflective layer formed over the front surface of the substrate, an absorbing layer formed over the reflective layer, and a chucking layer formed on the rear surface of the substrate and positioned to chuck the substrate to an electrostatic chuck. The substrate has a non-conducting portion which eliminates electrical conduction between the reflective layer and the chucking layer and electrical conduction between the absorbing layer and the chucking layer, and the non-conducting portion is formed by forming a portion of the substrate covered with one or more covering members and preventing formation of the reflective layer and the absorbing layer.