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Tigran A Nshanian

from Santa Clara, CA
Age ~76
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Also known as:
Tigran Nishanian, N N, A A, A N
Phone and address:
150 Saratoga Ave #354, Santa Clara, CA 95051
(408) 896-1310
Related to:
Jimmy AnthonyMichael T Nshanian, 45Emma NshanianEmma S Saiadian, 79
Connected to:
Nada C Nsheiwat, 43Prince O Nsiah, 43Emanuel Nso, 70Kenneth U Nsofor, 39Priscilla Nsofu, 40Binwell Nsofwa, 51Donald Y Nsom, 37Mounir T Nsouli, 42Frank M Nsumba, 68Roy Ntagozera, 43

Tigran Nshanian Phones & Addresses

  • 150 Saratoga Ave #354, Santa Clara, CA 95051 (408) 896-1310
  • 150 Saratoga Ave, Santa Clara, CA 95051
  • Cupertino, CA
  • Troy, NY
  • Mountain View, CA
  • Averill Park, NY
  • 150 Saratoga Ave UNIT 354, Santa Clara, CA 95051

Work

Position: Professional/Technical

Education

Degree: Associate degree or higher

Publications

Us Patents

Reducing Or Eliminating Nanopipe Defects In Iii-Nitride Structures

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US Patent:
20190081207, Mar 14, 2019
Filed:
Nov 14, 2018
Appl. No.:
16/190955
Inventors:
- San Jose CA, US
Isaac Harshman Wildeson - San Jose CA, US
Tigran Nshanian - Santa Clara CA, US
Parijat Pramil Deb - San Jose CA, US
Assignee:
Lumileds LLC - San Jose CA
International Classification:
H01L 33/12
H01S 5/323
H01L 33/00
H01L 33/32
H01S 5/30
H01L 25/16
H01L 27/02
H01L 33/02
H01L 33/62
H01L 33/30
H01L 33/20
H01L 33/06
Abstract:
Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

Reducing Or Eliminating Nanopipe Defects In Iii-Nitride Structures

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US Patent:
20160308092, Oct 20, 2016
Filed:
Jun 27, 2016
Appl. No.:
15/193624
Inventors:
- Eindhoven, NL
Isaac Harshman Wildeson - San Jose CA, US
Tigran Nshanian - Santa Clara CA, US
Parijat Pramil Deb - San Jose CA, US
International Classification:
H01L 33/12
H01L 33/32
H01S 5/323
H01L 27/02
H01L 25/16
H01S 5/30
H01L 33/06
H01L 33/00
Abstract:
Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

Reducing Or Eliminating Nanopipe Defects In Iii-Nitride Structures

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US Patent:
20150207024, Jul 23, 2015
Filed:
Jul 3, 2013
Appl. No.:
14/413233
Inventors:
- EINDHOVEN, NL
Isaac Harshman Wildeson - San Jose CA, US
Tigran Nshanian - Santa Clara CA, US
Parijan Pramil Deb - San Jose CA, US
International Classification:
H01L 33/00
H01L 33/06
H01L 33/62
H01L 33/32
H01L 33/30
H01L 33/02
H01L 33/20
Abstract:
Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.
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Tigran A Nshanian from Santa Clara, CA, age ~76 Get Report