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Thomas Wunderer

from Santa Cruz, CA
Age ~45
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Also known as:
Thomas Mundere, Thomas R
Connected to:
Matthew R Wunderink, 43Richard G Wunderink, 71Adam D Wunderlich, 43Amy M Wunderlich, 42Andrew J Wunderle, 29Ann H Wunderly, 46Annette C Wunderlich, 75Anthony C Wunderlich, 53Benjamin Wunderlich, 44Corey R Wunderlich, 35

Thomas Wunderer Phones & Addresses

  • Santa Cruz, CA
  • San Antonio, TX
  • Round Rock, TX
  • Palo Alto, CA
  • Berkeley, CA

Publications

Us Patents

Gap Distributed Bragg Reflectors

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US Patent:
20130050686, Feb 28, 2013
Filed:
Aug 25, 2011
Appl. No.:
13/217859
Inventors:
Thomas Wunderer - Palo Alto CA, US
Christopher L. Chua - San Jose CA, US
Brent S. Krusor - Fremont CA, US
Noble M. Johnson - Menlo Park CA, US
Assignee:
PALO ALTO RESEARCH CENTER INCORPORATED - Palo Alto CA
International Classification:
G01N 21/41
H01S 5/183
H01L 21/66
US Classification:
356128, 438 8, 372 5011, 257E2153
Abstract:
A device includes one or more reflector components. Each reflector component comprises layer pairs of epitaxially grown reflective layers and layers of a non-epitaxial material, such as air. Vias extend through at least some of the layers of the reflector components. The device may include a light emitting layer.

Removing Aluminum Nitride Sections

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US Patent:
20130052758, Feb 28, 2013
Filed:
Aug 25, 2011
Appl. No.:
13/217821
Inventors:
Brent S. Krusor - Fremont CA, US
Christopher L. Chua - San Jose CA, US
Thomas Wunderer - Palo Alto CA, US
Noble M. Johnson - Menlo Park CA, US
Bowen Cheng - Atherton CA, US
Assignee:
PALO ALTO RESEARCH CENTER INCORPORATED - Palo Alto CA
International Classification:
H01L 21/66
B44C 1/22
US Classification:
438 14, 15634515, 257E2153
Abstract:
Approaches for substantially removing bulk aluminum nitride (AlN) from one or more layers epitaxially grown on the bulk AlN are discussed. The bulk AlN is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AlN can be measured and used to control etching.

Ultraviolet Light Emitting Devices Having Enhanced Light Extraction

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US Patent:
20130082237, Apr 4, 2013
Filed:
Dec 16, 2011
Appl. No.:
13/328783
Inventors:
John E. Northrup - Palo Alto CA, US
Christopher L. Chua - San Jose CA, US
Michael Kneissl - Berlin, DE
Thomas Wunderer - Palo Alto CA, US
Noble M. Johnson - Menlo Park CA, US
Assignee:
PALO ALTO RESEARCH CENTER INCORPORATED - Palo Alto CA
International Classification:
H01L 33/04
H01L 33/02
US Classification:
257 13, 257 76, 257 77, 257103, 438 47, 257E33023, 257E33035, 257E33005
Abstract:
Light emitting devices having an enhanced degree of polarization, P, and methods for fabricating such devices are described. A light emitting device may include a light emitting region that is configured to emit light having a central wavelength, λ, and a degree of polarization, P, where P>0.006λ−b for 200 nm≦λ≦400 nm, wherein b≦1.5.

Optically Pumped Surface Emitting Lasers Incorporating High Reflectivity/ Bandwidth Limited Reflector

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US Patent:
20130250986, Sep 26, 2013
Filed:
Mar 22, 2012
Appl. No.:
13/427335
Inventors:
Thomas Wunderer - Palo Alto CA, US
John E. Northrup - Palo Alto CA, US
Mark R. Teepe - Menlo Park CA, US
Noble M. Johnson - Menlo Park CA, US
Assignee:
PALO ALTO RESEARCH CENTER INCORPORATED - Palo Alto CA
International Classification:
H01S 5/024
H01S 5/028
H01S 5/34
US Classification:
372 36, 372 4501, 372 4901
Abstract:
Optically pumped laser structures incorporate reflectors that have high reflectivity and are bandwidth limited to a relatively narrow band around the central laser radiation wavelength. In some cases, the reflectors may be -wavelength distributed Bragg reflectors (DBRs).

Surface Emitting Laser Incorporating Third Reflector

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US Patent:
20130343420, Dec 26, 2013
Filed:
Mar 22, 2012
Appl. No.:
13/427105
Inventors:
John E. Northrup - Palo Alto CA, US
Thomas Wunderer - Palo Alto CA, US
Noble M. Johnson - Menlo Park CA, US
Assignee:
PALO ALTO RESEARCH CENTER INCORPORATED - Palo Alto CA
International Classification:
H01S 5/183
US Classification:
372 5011
Abstract:
Surface emitting laser structures that include a partially reflecting element disposed in the laser optical cavity are disclosed. A vertical external cavity surface emitting laser (VECSEL) structure includes a pump source configured to emit radiation at a pump wavelength, λ, an external out-coupling reflector, a distributed Bragg reflector (DBR,) and an active region arranged between the DBR and the out-coupling reflector. The active region is configured to emit radiation at a lasing wavelength, λ. The VECSEL structure also includes partially reflecting element (PRE) arranged between the gain element and the external out-coupling reflector. The PRE has reflectivity of between about 30% and about 70% for the radiation at the lasing wavelength and reflectivity of between about 30% and about 70% for the radiation at the pump wavelength.

Method Of Growing Epitaxial Layers On A Substrate

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US Patent:
20140011345, Jan 9, 2014
Filed:
Jun 14, 2012
Appl. No.:
13/523670
Inventors:
Christopher L. Chua - San Jose CA, US
Mark R. Teepe - Menlo Park CA, US
Thomas Wunderer - Palo Alto CA, US
Zhihong Yang - San Jose CA, US
Noble M. Johnson - Menlo Park CA, US
Clifford Knollenberg - San Bruno CA, US
Assignee:
PALO ALTO RESEARCH CENTER INCORPORATED - Palo Alto CA
International Classification:
H01L 21/02
US Classification:
438503
Abstract:
An epitaxial growth method includes plasma treating a surface of a bulk crystalline Aluminum Nitride (AlN) substrate and subsequently heating the substrate in an ammonia-rich ambient to a temperature of above 1000 C. for at least 5 minutes without epitaxial growth. After heating the surface, a III-nitride layer is epitaxially grown on the surface.

Electron Beam Pumped Vertical Cavity Surface Emitting Laser

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US Patent:
20140072009, Mar 13, 2014
Filed:
Jun 14, 2012
Appl. No.:
13/523681
Inventors:
Thomas Wunderer - Palo Alto CA, US
Noble M. Johnson - Menlo Park CA, US
John E. Northrup - Palo Alto CA, US
Assignee:
PALO ALTO RESEARCH CENTER INCORPORATED - Palo Alto CA
International Classification:
H01S 5/343
US Classification:
372 45012, 438 29
Abstract:
A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λ, in response to pumping by an electron beam. One or more layers of the heterostructure may be doped. The active region is disposed between the first reflector and the second reflector and is spaced apart from the first reflector by an external cavity. An electron beam source is configured to generate the electron beam directed toward the active region. At least one electrical contact is electrically coupled to the heterostructure and is configured to provide a current path between the heterostructure and ground.

Devices Having Removed Aluminum Nitride Sections

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US Patent:
20130049005, Feb 28, 2013
Filed:
Aug 25, 2011
Appl. No.:
13/217844
Inventors:
Christopher L. Chua - San Jose CA, US
Brent S. Krusor - Fremont CA, US
Thomas Wunderer - Palo Alto CA, US
Noble M. Johnson - Menlo Park CA, US
Assignee:
PALO ALTO RESEARCH CENTER INCORPORATED - Palo Alto CA
International Classification:
H01L 33/02
C30B 25/02
B32B 3/10
US Classification:
257 76, 257 96, 4281951, 117 88, 117104, 257E33023, 257E33014
Abstract:
One or more layers are epitaxially grown on a bulk crystalline AlN substrate. The epitaxial layers include a surface which is the initial surface of epitaxial growth of the epitaxial layers. The AlN substrate is substantially removed over a majority of the initial surface of epitaxial growth.
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Thomas Wunderer from Santa Cruz, CA, age ~45 Get Report