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Thomas E Novet

from Corvallis, OR
Age ~65
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Also known as:
Thomas Eugene Novet, Tom E Novet, Tom A Novet, Wendy Novet
Phone and address:
3360 NW Crest Dr, Corvallis, OR 97330
Related to:
Maria G Novet, 58James Novet, 36
Connected to:
Matthew S Novet, 69Paul Novetsky, 73Zachary P Novetsky, 37Lynda A Novey, 65Shannon L Novey, 55Starla J Novey, 64Sergei A Novgorodov, 69Novi Novi, 35Agnes M Novia, 103Anne Novia, 82

Thomas Novet Phones & Addresses

  • 3360 NW Crest Dr, Corvallis, OR 97330
  • 2905 Ashwood Dr, Corvallis, OR 97330 (541) 753-9528
  • 6100 Happy Valley Dr, Corvallis, OR 97330 (541) 745-5360
  • San Marcos, CA
  • Highlands Ranch, CO
  • Eugene, OR
  • Springfield, OR
  • 3360 NW Crest Dr, Corvallis, OR 97330 (541) 745-5360

Work

Position: Craftsman/Blue Collar

Education

Degree: Associate degree or higher

Business Records

Name / Title
Company / Classification
Phones & Addresses
Thomas Novet
President
MIGHTY OAKS CHILDREN'S THERAPY CENTER
Residential Care
3615 Spicer Rd SE, Albany, OR 97322
3615 Spicer Dr SE, Albany, OR 97322
(541) 967-7551

Publications

Us Patents

Silicon-Based Dielectric Tunneling Emitter

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US Patent:
6753544, Jun 22, 2004
Filed:
Apr 30, 2001
Appl. No.:
09/846047
Inventors:
Zhizhang Chen - Corvallis OR
Michael David Bice - Corvallis OR
Ronald L. Enck - Corvallis OR
Michael J. Regan - Corvallis OR
Thomas Novet - Corvallis OR
Paul J. Benning - Corvallis OR
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01L 2906
US Classification:
257 10, 257 11, 257163
Abstract:
An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Annealed Tunneling Emitter

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US Patent:
6781146, Aug 24, 2004
Filed:
Apr 30, 2001
Appl. No.:
09/846127
Inventors:
Zhizhang Chen - Corvallis OR
Michael J. Regan - Corvallis OR
Brian E Bolf - Albany OR
Thomas Novet - Corvallis OR
Paul J. Benning - Lexington MA
Mark Alan Johnstone - Lebanon OR
Sriram Ramamoorthi - Corvallis OR
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01L 2906
US Classification:
257 10, 257 11, 257163
Abstract:
An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Emitter With Filled Zeolite Emission Layer

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US Patent:
6783418, Aug 31, 2004
Filed:
Jan 15, 2004
Appl. No.:
10/758801
Inventors:
Thomas Novet - Corvallis OR
David M. Schut - Philomath OR
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01J 924
US Classification:
445 24
Abstract:
An emitter includes an electron supply layer, a dielectric layer on the electron supply layer defining an emission area, and a filled zeolite emission layer within the defined emission area and in contact with the electron supply layer. The filled zeolite emission layer holds a semiconductor material within the cage of the zeolite.

Emitter With Filled Zeolite Emission Layer

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US Patent:
6787792, Sep 7, 2004
Filed:
Apr 18, 2002
Appl. No.:
10/126426
Inventors:
Thomas Novet - Corvallis OR
David M. Schut - Philomath OR
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01L 2912
US Classification:
257 10, 257 14, 313311, 313346 R
Abstract:
An emitter includes an electron supply layer, a dielectric layer on the electron supply layer defining an emission area, and a filled zeolite emission layer within the defined emission area and in contact with the electron supply layer. The filled zeolite emission layer holds a semiconductor material within the cage of the zeolite.

Silicon-Based Dielectric Tunneling Emitter

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US Patent:
6902458, Jun 7, 2005
Filed:
Jan 12, 2004
Appl. No.:
10/755890
Inventors:
Zhizhang Chen - Corvallis OR, US
Michael David Bic - Corvallis OR, US
Ronald L. Enck - Corvallis OR, US
Michael J. Regan - Corvallis OR, US
Thomas Novet - Corvallis OR, US
Paul J. Benning - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01L029/06
H01J009/04
US Classification:
445 50, 445 49, 445 51, 438 20, 427 49, 427 77, 257 10, 257 11, 313309, 313311, 313336, 313495, 313497
Abstract:
An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Tunneling Emitters

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US Patent:
6933517, Aug 23, 2005
Filed:
Oct 15, 2003
Appl. No.:
10/686965
Inventors:
Zhizhang Chen - Corvallis OR, US
Paul J. Benning - Corvallis OR, US
Sriram Ramamoorthi - Corvallis OR, US
Thomas Novet - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01L029/06
US Classification:
257 10, 257 11, 257163, 313309, 313310
Abstract:
An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.

Method Of Making A Tunneling Emitter

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US Patent:
7044823, May 16, 2006
Filed:
May 18, 2004
Appl. No.:
10/848695
Inventors:
Zhizhang Chen - Corvallis OR, US
Michael J. Regan - Corvallis OR, US
Brian E Bolf - Albany OR, US
Thomas Novet - Corvallis OR, US
Paul J. Benning - Lexington MA, US
Mark Alan Johnstone - Lebanon OR, US
Sriram Ramamoorthi - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01J 9/02
H01L 29/06
US Classification:
445 50, 445 51, 313309, 313495, 257 10, 438 20
Abstract:
An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Method Of Manufacturing An Emitter

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US Patent:
7049158, May 23, 2006
Filed:
Oct 15, 2003
Appl. No.:
10/688731
Inventors:
Zhizhang Chen - Corvallis OR, US
Paul J. Benning - Corvallis OR, US
Sriram Ramamoorthi - Corvallis OR, US
Thomas Novet - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01L 21/00
US Classification:
438 20, 438 22, 257 10, 257163, 365118, 365217
Abstract:
A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.
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Thomas E Novet from Corvallis, OR, age ~65 Get Report