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Thomas C Mele

from Sandy, UT
Age ~64
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Also known as:
Thomas Christopher Mele, Thomas G Mele, Thomas M Mele, Tobias Mele
Related to:
Thomas Ogden, 85
Connected to:
Alan J Mele, 73Albert M Mele, 64Aldo Mele, 50Amanda F Mele, 60Anila Mele, 45Colleen N Mele, 37Daniel Mele, 74Dino A Mele, 48Gerardo Mele, 66Helen F Mele, 90

Thomas Mele Phones & Addresses

  • Sandy, UT
  • 3263 Vineyard Ave SPC 49, Pleasanton, CA 94566 (530) 864-4026
  • Westlake, OH
  • Lancaster, CA
  • 2533 Lakeside Cir, Livermore, CA 94550 (925) 292-5383 (925) 443-6279
  • Mendham, NJ
  • Mesa, AZ
  • Austin, TX
  • New Britain, CT
  • Alameda, CA
  • Moraga, CA
  • 2533 Lakeside Cir, Livermore, CA 94550 (530) 864-4026

Work

Company: Applied materials, inc. Address: 2727 Augustine Drive M South 0768, Santa Clara, CA 95054 Position: Chief marketing officer Industries: Management Consulting Services

Education

Degree: High school graduate or higher

Emails

t***[email protected]

Professional Records

Medicine Doctors

Thomas Mele Photo 1

Thomas J. Mele

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Specialties:
Family Medicine
Work:
Columbia University Medical Center Student Health
60 Hvn Ave APT 3E, New York, NY 10032
(212) 305-3400 (phone), (212) 342-3955 (fax)
Education:
Medical School
McGill University Faculty of Medicine, Montreal, Canada
Graduated: 1990
Procedures:
Vaccine Administration
Conditions:
Abnormal Vaginal Bleeding
Acne
Acute Bronchitis
Acute Conjunctivitis
Acute Pharyngitis
Languages:
English
Spanish
Description:
Dr. Mele graduated from the McGill University Faculty of Medicine, Montreal, Canada in 1990. He works in New York, NY and specializes in Family Medicine. Dr. Mele is affiliated with New York Presbyterian Westchester Division.

Business Records

Name / Title
Company / Classification
Phones & Addresses
Thomas Mele
Chief Marketing Officer
Applied Materials, Inc.
Management Consulting Services
2727 Augustine Drive M South 0768, Santa Clara, CA 95054
Thomas Mele
Chief Marketing Officer
Applied Materials, Inc.
Management Consulting Services
2727 Augustine Drive M South 0768, Santa Clara, CA 95054

Publications

Us Patents

Method For Silicon Based Dielectric Chemical Vapor Deposition

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US Patent:
7473655, Jan 6, 2009
Filed:
Jun 17, 2005
Appl. No.:
11/155646
Inventors:
Yaxin Wang - Fremont CA, US
Yuji Maeda - Sakae-machi, JP
Thomas C. Mele - Livermore CA, US
Sean M. Seutter - San Jose CA, US
Sanjeev Tandon - Sunnyvale CA, US
R. Suryanarayanan Iyer - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/31
US Classification:
438791, 438793, 438794
Abstract:
Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH)—N.

Silicon Nitride Film With Stress Control

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US Patent:
7488690, Feb 10, 2009
Filed:
Jul 6, 2004
Appl. No.:
10/885969
Inventors:
R. Suryanarayanan Iyer - Santa Clara CA, US
Andrew M. Lam - San Francisco CA, US
Yuji Maeda - Chiba, JP
Thomas Mele - Livermore CA, US
Jacob W. Smith - Santa Clara CA, US
Sean M. Seutter - San Jose CA, US
Sanjeev Tandon - Sunnyvale CA, US
Randhir P. Singh Thakur - San Jose CA, US
Sunderraj Thirupapuliyur - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/302
H01L 21/461
H01L 21/425
H01L 21/336
US Classification:
438724, 438257, 438710, 438514
Abstract:
An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.

Method For Silicon Based Dielectric Chemical Vapor Deposition

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US Patent:
20090111284, Apr 30, 2009
Filed:
Jan 5, 2009
Appl. No.:
12/348382
Inventors:
Yaxin Wang - Fremont CA, US
Yuji Maeda - Chiba, JP
Thomas C. Mele - Livermore CA, US
Sean M. Seutter - San Jose CA, US
Sanjeev Tandon - Sunnyvale CA, US
R. Suryanarayanan Iyer - Santa Clara CA, US
International Classification:
H01L 21/314
US Classification:
438791, 257E21269
Abstract:
Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes heating a substrate disposed in a processing chamber to a temperature less than about 550 degrees Celsius; flowing a nitrogen and carbon containing chemical comprising (HC)—N═N—H into the processing chamber; flowing a silicon-containing source chemical with silicon-nitrogen bonds into the processing chamber; and depositing a silicon and nitrogen containing film on the substrate.
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Thomas C Mele from Sandy, UT, age ~64 Get Report