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Thomas Hurt Phones & Addresses

  • Chantilly, VA
  • Fort Belvoir, VA
  • 13379 Brookfield Ct, Chantilly, VA 20151 (540) 287-0717

Work

Position: Homemaker

Education

Degree: Associate degree or higher

Resumes

Resumes

Thomas Hurt Photo 1

Thomas Hurt

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Thomas Hurt Photo 2

Thomas Hurt

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Location:
Washington D.C. Metro Area
Industry:
Government Administration
Thomas Hurt Photo 3

Thomas Hurt

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Location:
United States

Business Records

Name / Title
Company / Classification
Phones & Addresses
Thomas C. Hurt
Incorporator
HURT EXPRESS, INC

Publications

Us Patents

Method And Apparatus For Storing Data Using Spin-Polarized Electrons

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US Patent:
55463371, Aug 13, 1996
Filed:
Sep 23, 1994
Appl. No.:
8/311738
Inventors:
Thomas D. Hurt - Chantilly VA
Scott A. Halpine - Gaithersburg MD
Assignee:
Terastore, Inc. - College Park MD
International Classification:
G11C 1304
US Classification:
365121
Abstract:
A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, the electron having a wavelength "characteristic" of unpaired electrons in the data storage layer which cause the magnetic moment of the material, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at a second wavelength at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.

Method And Apparatus For Storing Data Using Spin-Polarized Electrons

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US Patent:
61478946, Nov 14, 2000
Filed:
Sep 21, 1998
Appl. No.:
9/157368
Inventors:
Thomas D. Hurt - Chantilly VA
Assignee:
TeraStore, Inc. - Chantilly VA
International Classification:
G11C 1300
US Classification:
365118
Abstract:
A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, the electron having a wavelength "characteristic" of unpaired electrons in the data storage layer which cause the magnetic moment of the material, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at a second wavelength at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.

Data Storage Medium For Storing Data As A Polarization Of A Data Magnetic Field And Method And Apparatus Using Spin-Polarized Electrons For Storing The Data Onto The Data Storage Medium And Reading The Stored Data Therefrom

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US Patent:
56047061, Feb 18, 1997
Filed:
Mar 23, 1995
Appl. No.:
8/408784
Inventors:
Thomas D. Hurt - Chantilly VA
Scott A. Halpine - Gaithersburg MD
Assignee:
TeraStore, Inc. - College Park MD
International Classification:
G11C 700
US Classification:
365217
Abstract:
A data storage medium comprising a substrate and a data storage layer formed on the substrate. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.

Data Storage Medium For Storing Data As A Polarization Of A Data Magnetic Field And Method And Apparatus Using Spin-Polarized Electrons For Storing The Data Onto The Data Storage Medium And Reading The Stored Data Therefrom

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US Patent:
54466873, Aug 29, 1995
Filed:
Jan 31, 1994
Appl. No.:
8/188828
Inventors:
Thomas D. Hurt - Chantilly VA
Scott A. Halpine - Gaithersburg MD
Assignee:
Terastore, Inc. - Gaithersburg MD
International Classification:
G11C 1304
US Classification:
365121
Abstract:
A data storage medium comprising a substrate and a data storage layer formed on the substrate. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.

Method And Apparatus For Storing Data Using Spin-Polarized Electrons

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US Patent:
58380205, Nov 17, 1998
Filed:
May 1, 1996
Appl. No.:
8/641418
Inventors:
Thomas D. Hurt - Chantilly VA
Assignee:
TeraStore, Inc. - Chantilly VA
International Classification:
H01L 2906
US Classification:
257 10
Abstract:
A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, the electron having a wavelength "characteristic" of unpaired electrons in the data storage layer which cause the magnetic moment of the material, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at a second wavelength at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.

Method And Apparatus For Storing Data Using Spin-Polarized Electrons

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US Patent:
63044811, Oct 16, 2001
Filed:
Jul 7, 2000
Appl. No.:
9/612221
Inventors:
Thomas D. Hurt - Chantilly VA
Assignee:
TeraStore, Inc. - Chantilly VA
International Classification:
G11C 1300
US Classification:
365118
Abstract:
A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, the electron having a wavelength "characteristic" of unpaired electrons in the data storage layer which cause the magnetic moment of the material, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at a second wavelength at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.
Thomas D Hurt from Chantilly, VA, age ~73 Get Report