Talex Sajoto

6464795, Oct 15, 2002

May 3, 2000

09/563573

Semyon Sherstinsky - San Francisco CA
Calvin Augason - Los Altos CA
Leonel A. Zuniga - San Jose CA
Jun Zhao - Cupertino CA
Talex Sajoto - Campbell CA
Leonid Selyutin - San Leandro CA
Joseph Yudovsky - Campbell CA
Maitreyee Mahajani - San Jose CA
Steve G. Ghanayem - Sunnyvale CA
Tai T. Ngo - Dublin CA
Arnold Kholodenko - San Francisco CA

Applied Materials, Inc. - Santa Clara CA

G23C 1600

118728, 118715, 118725

A support member for supporting a substrate in a process chamber, the support member having a substrate support surface with one or more isolated recessed areas. A vacuum channel and a gas channel are formed in the support member along a common plane and are coupled to a vacuum source and gas source respectively. The gas channel comprises two or more concentrically disposed annular gas channels encompassing the vacuum channel. The vacuum channel is coupled to the support surface, and in particular to the one or more recessed areas, by a plurality of conduits. A portion of the conduits is disposed diametrically exterior to at least one of the annular gas channels and communicates with the vacuum channel via bypass channels.

6527865, Mar 4, 2003

Jun 16, 2000

09/595767

Talex Sajoto - San Jose CA
Charles Dornfest - Fremont CA
Leonid Selyutin - San Leandro CA
Jun Zhao - Cupertino CA
Vincent Ku - San Jose CA
Xiao Liang Jin - San Jose CA

Applied Materials, Inc. - Santa Clara CA

C23C 16000

118715, 118724

The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. In one aspect, an apparatus and process for the control of a gas flowed through a gas feedthrough in a substrate processing chamber and system is provided. In another aspect, a deposition chamber is provided for depositing BST and other materials which require vaporization, especially low volatility precursors which are transported as a liquid to a vaporizer to be converted to vapor phase and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. The chamber comprises a series of heated temperature controlled internal liners, such as a heated gas feedthrough.

6616767, Sep 9, 2003

Mar 27, 1998

09/057005

Jun Zhao - Cupertino CA
Talex Sajoto - San Jose CA
Charles Dornfest - Fremont CA
Harold Mortensen - Carlsbad CA
Richard Palicka - San Clemente CA

Applied Materials, Inc. - Santa Clara CA

C23C 1600

118723, 15634547

The present invention provides techniques for coupling radio-frequency (RF) power to a metal plate in a ceramic pedestal. Perforations in the metal plate allow ceramic-to-ceramic bonding through the metal plate. The power from an RF power feed is distributed to the perforated metal plate via several electrodes that are spaced away from the centerline of the RF power feed, thus splitting power distribution. A ceramic bonding disk between the metal plate and the RF power feed provides mechanical support for the metal plate and a ceramic body to bond to through the perforations, thus reducing cracking of the metal plate and the surrounding ceramic material.

7094313, Aug 22, 2006

Apr 21, 2004

10/829520

Eller Y. Juco - San Jose CA, US
Visweswaren Sivaramakrishnan - Santa Clara CA, US
Mario David Silvetti - Morgan Hill CA, US
Talex Sajoto - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

C23F 1/02
C23C 14/00
C23C 16/00

15634544, 15634548, 20429808, 20429807, 118723 VE, 118723 R

A substrate processing system is provided with a processing chamber, an alternating voltage supply, and an impedance matching network. The processing chamber holds a substrate during processing and the alternating voltage supply is connected with the processing chamber to capacitively couple energy to a plasma formed within the processing chamber. The impedance matching network is coupled with the alternating voltage supply and has a variable resistive element and a variable reactive element, whose states respectively define distinct real and imaginary parts of an impedance.

20020015855, Feb 7, 2002

Jun 15, 2001

09/882813

Talex Sajoto - San Jose CA, US
Elaine Pao - Los Altos Hills CA, US
Charles Dornfest - Fremont CA, US
Jun Zhao - Cupertino CA, US

C23C014/32
C23C016/00
B32B015/00

428/639000, 204/298250, 204/192120, 118/719000, 118/715000, 118/72300E, 427/248100, 427/255290, 428/544000

The present invention provides a system and method for depositing materials onto a substrate and preferably includes physical vapor deposition (PVD) and chemical vapor deposition (CVD) processing. In one aspect, a system is provided that deposits a stack of layers on a substrate comprising one or more nucleation layers, one or more conductive layers compatible with a high-dielectric-constant (HDC) material and one or more HDC layers in various sequences. The HDC material is useful in depositing thin metal-oxide films and ferroelectric films, as well as other films requiring vaporization of precursor liquids. The system allows PVD and CVD to occur within a centralized system to avoid contamination and reduce processing time. Further, different CVD layers can be deposited within the same CVD chamber. In one embodiment, multiple sets of vaporized gas passages and other gas passages can be formed through a gas manifold to allow mixing of multiple precursors near the endpoint of the flow path for control of the mixing regimes. The layer can be annealed to promote better adhesion and surface texture between adjoining layers.

20020075631, Jun 20, 2002

Dec 27, 2000

09/749262

Kaushal Singh - Santa Clara CA, US
Farid Abooameri - Santa Clara CA, US
Visweswaren Sivaramakrishnan - Santa Clara CA, US
Talex Sajoto - San Jose CA, US
Vicente Lim - Newark CA, US
Jun Zhao - Cupertino CA, US

Applied Materials, Inc.

H01G004/06

361/311000

The present invention provides a capacitor having upper and lower electrodes formed of iridium or iridium oxide or combinations thereof. The electrodes are preferably formed using physical vapor deposition. An insulating layer disposed between the electrodes can be a ferroelectric ceramic such as PZT or PLZT.

20100109263, May 6, 2010

Nov 13, 2008

12/270187

Seok Yul Jun - OSan-Si, KR
Bum Jin Park - Seoul, KR
Sun Il Kim - Giheung-gu, KR
Hyong Seok Oh - Seoul, KR
Sung Chul Cho - Sungnam, KR
Young Sam Na - O-San City, KR
Yeon Sang Cho - Seongnam-si, KR
Ha Sung Song - Yongin, KR
Seong Ju Kim - Dong Ahn-Gu, KR
Hee Sang Chae - SeongNam, KR
Talex Sajoto - Campbell CA, US

B23B 31/28
B23P 17/00

279128, 295274

Electrostatic chucks and methods of manufacturing the same are provided herein. In some embodiments, an electrostatic chuck comprises an electrically conductive body having one or more channels formed in an upper surface thereof; a plate positioned within the one or more channels to define one or more plenums between the body and the plate, wherein the surfaces of the plenum are anodized; one or more fluid passages disposed in the plate and fluidly coupling the one or more plenums to the upper surface of the body, wherein the surfaces of the fluid passages are electrically insulated; and a dielectric layer disposed over the upper surface of the body and the plate, wherein the dielectric layer forms a support surface for a substrate to be disposed thereon.

60568232, May 2, 2000

Mar 31, 1998

9/052885

Talex Sajoto - Campbell CA
Leonid Selyutin - San Leandro CA
Jun Zhao - Cupertino CA
Charles Dornfest - Fremont CA

Applied Materials, Inc. - Santa Clara CA

C23C 1600

118715

The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.