Takehito T Koshizawa

20140041803, Feb 13, 2014

Aug 8, 2012

13/569923

Takehito KOSHIZAWA - San Jose CA, US
Noriaki KAMEKAWA - Okinawa, JP
Kei KINOSHITA - Villach, AT
Michael PUGGL - Villach, AT

LAM RESEARCH AG - Villach

B44C 1/22

15634519, 15634523

In an apparatus and method for treating a wafer-shaped article, a rotary chuck is configured to hold a wafer-shaped article of a predetermined diameter such that a surface of the wafer-shaped article facing the rotary chuck is spaced from an opposing peripheral surface of the rotary chuck. The opposing peripheral surface comprises a first surface overlapping an outer peripheral edge of a wafer-shaped article when positioned on the spin chuck and a second surface positioned radially inwardly of the first surface and meeting the first surface at an interface that is radially inward of and substantially concentric with a wafer-shaped article when positioned on the rotary chuck. The second surface is substantially more hydrophobic than the first surface.

20220406594, Dec 22, 2022

Jun 18, 2021

17/352039

- Santa Clara CA, US
Rui CHENG - Santa Clara CA, US
Karthik JANAKIRAMAN - San Jose CA, US
Abhijit B. MALLICK - Fremont CA, US
Takehito KOSHIZAWA - San Jose CA, US
Bo QI - San Jose CA, US

H01L 21/02

Embodiments of the present disclosure generally relate to processes for forming silicon- and boron-containing films for use in, e.g., spacer-defined patterning applications. In an embodiment, a spacer-defined patterning process is provided. The process includes disposing a substrate in a processing volume of a processing chamber, the substrate having patterned features formed thereon, and flowing a first process gas into the processing volume, the first process gas comprising a silicon-containing species, the silicon-containing species having a higher molecular weight than SiH. The process further includes flowing a second process gas into the processing volume, the second process gas comprising a boron-containing species, and depositing, under deposition conditions, a conformal film on the patterned features, the conformal film comprising silicon and boron.

20220319601, Oct 6, 2022

Mar 28, 2022

17/705744

- Santa Clara CA, US
Tomohiko Kitajima - San Jose CA, US
Gill Yong Lee - San Jose CA, US
Qian Fu - Pleasanton CA, US
Sung-Kwan Kang - Santa Clara CA, US
Takehito Koshizawa - San Jose CA, US
Fredrick Fishburn - Aptos CA, US

Applied Materials, Inc. - Santa Clara CA

G11C 16/04
H01L 27/11582
H01L 27/11556
H01L 27/11524
H01L 27/1157

Described is a memory string including at least one select gate for drain (SGD) transistor and at least one memory transistor in a vertical hole extending through a memory stack on a substrate. The memory stack comprises alternating word lines and dielectric material. There is at least one select-gate-for-drain (SGD) transistor in a first vertical hole extending through the memory stack, the select-gate-for-drain (SGD) transistor comprising a first gate material. At least one memory transistor is in a second vertical hole extending through the memory stack, the at least one memory transistor comprising a second gate material different from the first gate material.

20220238531, Jul 28, 2022

Apr 14, 2022

17/720465

- Santa Clara CA, US
Takehito Koshizawa - San Jose CA, US
Abhijit Basu Mallick - Sunnyvale CA, US
Pramit Manna - Sunnyvale CA, US
Nancy Fung - Livermore CA, US
Eswaranand Venkatasubramanian - Sant Clara CA, US
Ho-Yung David Hwang - Cupertino CA, US
Samuel E. Gottheim - Santa Clara CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 27/108

Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

20220186365, Jun 16, 2022

Dec 11, 2020

17/119655

- Santa Clara CA, US
Susmit Singha Roy - Sunnyvale CA, US
Takehito Koshizawa - San Jose CA, US
Bo Qi - San Jose CA, US
Abhijit Basu Mallick - Palo Alto CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/40

Methods for forming coating films comprising germanium oxide are disclosed. In some embodiments, the films are super-conformal to a feature on the surface of a substrate. The films are deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the super-conformal film.

20220189824, Jun 16, 2022

Dec 11, 2020

17/119648

- Santa Clara CA, US
Susmit Singha Roy - Sunnyvale CA, US
Takehito Koshizawa - San Jose CA, US
Bo Qi - San Jose CA, US
Abhijit Basu Mallick - Palo Alto CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/768
H01L 21/311
C23C 16/40
C23C 16/455
C23C 16/56

Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material.

20230021761, Jan 26, 2023

Oct 6, 2022

17/961224

- Santa Clara CA, US
Yang YANG - San Diego CA, US
Pramit MANNA - Santa Clara CA, US
Kartik RAMASWAMY - San Jose CA, US
Takehito KOSHIZAWA - San Jose CA, US
Abhijit Basu MALLICK - Fremont CA, US

H01L 21/02
C23C 16/26
H01L 21/033

Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350 C., exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.

20210134807, May 6, 2021

Jan 12, 2021

17/147001

- Santa Clara CA, US
Takehito Koshizawa - San Jose CA, US
Abhijit Basu Mallick - Paio Aito CA, US
Pramit Manna - Sunnyvale CA, US
Nancy Fung - Livermore CA, US
Eswaranand Venkatasubramanian - Santa Clara CA, US
Ho-yung David Hwang - Cupertino CA, US
Samuel E. Gottheim - Santa Clara CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 27/108

Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.