Sungchul Yoo

20050254049, Nov 17, 2005

May 14, 2004

10/845982

Qiang Zhao - San Jose CA, US
Torsten Kaack - Los Altos CA, US
Sungchul Yoo - Campbell CA, US
Zhengquan Tan - Cupertino CA, US

G01N021/41

356369000

A method for measurement of a specimen is provided. The method includes measuring spectroscopic ellipsometric data of the specimen. The method also includes determining a nitrogen concentration of a nitrided oxide gate dielectric formed on the specimen from the spectroscopic ellipsometric data. A computer-implemented method for analysis of a specimen is also provided. This method includes determining a nitrogen concentration of a nitrided oxide gate dielectric formed on the specimen from spectroscopic ellipsometric data generated by measurement of the specimen. In some embodiments, the methods described above may include determining an index of refraction of the nitrided oxide gate dielectric from the spectroscopic ellipsometric data and determining the nitrogen concentration from the index of refraction. In another embodiment, the methods described above may include measuring reflectometric data of the specimen. The nitrogen concentration may be determined from the spectroscopic ellipsometric data in combination with the reflectometric data.

20200335406, Oct 22, 2020

Apr 13, 2020

16/847388

- Milpitas CA, US
Antonio Arion Gellineau - Santa Clara CA, US
Andrei V. Shchegrov - Campbell CA, US
Sungchul Yoo - San Jose CA, US

H01L 21/66
G01B 15/02
H01L 21/67

Methods and systems for measuring a complex semiconductor structure based on measurement data before and after a critical process step are presented. In some embodiments, the measurement is based on x-ray scatterometry measurement data. In one aspect, a measurement is based on fitting combined measurement data to a simplified geometric model of the measured structure. In some embodiments, the combined measurement data is determined by subtraction of a measured diffraction pattern before the critical process step from a measured diffraction pattern after the critical process step. In some embodiments, the simplified geometric model includes only the features affected by the critical process step. In another aspect, a measurement is based on a combined data set and a trained signal response metrology (SRM) model. In another aspect, a measurement is based on actual measurement data after the critical process step and simulated measurement data before the critical process step.

20160322267, Nov 3, 2016

Jul 7, 2016

15/204461

- Milpitas CA, US
Xin Li - Shanghai, CN
Leonid Poslavsky - Belmont CA, US
Liequan Lee - Fremont CA, US
Meng Cao - Union City CA, US
Sungchul Yoo - San Jose CA, US
Andrei V. Shchegrov - Los Gatos CA, US
Sangbong Park - Union City CA, US

KLA-Tencor Corporation - Milpitas CA

H01L 21/66
G06F 17/50
G03F 7/20
H01L 21/67

Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of models having varying combinations of floating and fixed critical parameters and corresponding simulated spectra is generated. Each model is generated to determine one or more critical parameters for unknown structures based on spectra collected from such unknown structures. It is determined which one of the models best correlates with each critical parameter based on reference data that includes a plurality of known values for each of a plurality of critical parameters and corresponding known spectra. For spectra obtained from an unknown structure using a metrology tool, different ones of the models are selected and used to determine different ones of the critical parameters of the unknown structure based on determining which one of the models best correlates with each critical parameter based on the reference data.

20150058813, Feb 26, 2015

Aug 14, 2014

14/459516

- Milpitas CA, US
Xin Li - Shanghai, CN
Leonid Poslavsky - Belmont CA, US
Liequan Lee - Fremont CA, US
Meng Cao - Union City CA, US
Sungchul Yoo - San Jose CA, US
Andrei V. Shchegrov - Los Gatos CA, US
Sangbong Park - Union City CA, US

KLA-Tencor Corporation - Milpitas CA

G06F 17/50

716 52

Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of models having varying combinations of floating and fixed critical parameters and corresponding simulated spectra is generated. Each model is generated to determine one or more critical parameters for unknown structures based on spectra collected from such unknown structures. It is determined which one of the models best correlates with each critical parameter based on reference data that includes a plurality of known values for each of a plurality of critical parameters and corresponding known spectra. For spectra obtained from an unknown structure using a metrology tool, different ones of the models are selected and used to determine different ones of the critical parameters of the unknown structure based on determining which one of the models best correlates with each critical parameter based on the reference data.