Search

Sung Hee Kang

from San Jose, CA
Age ~53
Get Report
Also known as:
Sung H Kang, Seong Woo Kang, Sung Hee Ahn, Sunghee Kang
Phone and address:
1282 Hillcrest Dr, San Jose, CA 95120
Related to:
Injae Lee, 59Seong W Kang, 57Heetae Ahn, 56Hee KangAhn Hyojune, 53Myunghee Nam, 53
Connected to:
Allen L Kang, 53Aman Kang, 46Ashley B Kang, 40Baljinder K Kang, 61Barbara J Kang, 62Benedict J Kang, 38Birinder S Kang, 85Bong S Kang, 58Boon Y Kang, 77Bradley Kang, 38

Sung Kang Phones & Addresses

  • 1282 Hillcrest Dr, San Jose, CA 95120
  • Martinez, CA
  • Fremont, CA
  • Danville, CA
  • Saratoga, CA
  • Alameda, CA
  • Santa Clara, CA

Professional Records

Lawyers & Attorneys

Sung Kang Photo 1

Sung Kang - Lawyer

View page
Office:
Lowenstein Sandler LLP
ISLN:
1000858158
Admitted:
2019
Sung Kang Photo 2

Sung Kwan Kang - Lawyer

View page
Address:
Cleary Gottlieb Steen & Hamilton LLP
(252) 141-22xx (Office)
Licenses:
New York - Currently registered 1995
Education:
Harvard
Sung Kang Photo 3

Sung Kang - Lawyer

View page
Office:
Fordham Law School
Admitted:
2017

Business Records

Name / Title
Company / Classification
Phones & Addresses
Sung Kwang Kang
Chairman
Sung Kwang Kang
Fluid Power Pumps and Motors
1245Altissimo Pi, San Jose, CA 95130
Sung Kwang Kang
Chairman
Sung Kwang Kang
Fluid Power Pumps and Motors
1245Altissimo Pi, San Jose, CA 95130
Sung W. Kang
Owner
Rancho Coin Launry
Coin-Operated Laundry
930 23 St, Richmond, CA 94804
Sung W. Kang
Owner
Rancho Market
Ret Groceries & Meat Market · Ret Groceries Ret Meat/Fish
930 23 St, Richmond, CA 94804
(510) 235-3066
Sung Yong Kang
Soc signatory
TECHNOLOGIES NETWORK SYSTEMS, LLC
Sung Mook Kang
President
RED SEA JLK, INC
2324 Hilltop Mall Rd, San Pablo, CA 94806
Sung Kang
President
PROVIDENCE GLOBAL, INC
Business Services at Non-Commercial Site · Nonclassifiable Establishments
3112 Mckinley Dr, Santa Clara, CA 95051
Sung Il Kang
President
HANG SUNG INTERNATIONAL CORPORATION
* 1650 Zanker Rd #127, San Jose, CA 95112
1650 Zanker Rd, San Jose, CA 95112

Publications

Wikipedia

Sung Kang

Sung Kang

View page

Sung Kang is an American actor, known for his role as Han Luein the films Better Luck Tomorrow, The Fast and the Furious: Tokyo Drift, Fast & Furious, and Fast Five.

Sung Mo Kang

View page

Sung-Mo Steve Kang is an electrical engineering scientist, professor, author, inventor and entrepreneur. Kang was appointed as the second chancellor of the

Us Patents

Method For Forming Carbon Nanotubes With Post-Treatment Step

View page
US Patent:
6841002, Jan 11, 2005
Filed:
Nov 22, 2002
Appl. No.:
10/302126
Inventors:
Sung Gu Kang - San Jose CA, US
Craig Bae - San Jose CA, US
Assignee:
cDream Display Corporation - San Jose CA
International Classification:
C03B 1524
US Classification:
117 92, 117 93, 117102, 117103, 117108, 117921, 117929
Abstract:
Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed nanotube structures. The post-treatment removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The post-treatment is performed with the plasma at the same substrate temperature. For the post-treatment, the hydrogen containing gas is used as a plasma source gas. During the transition from the nanotube growth step to the post-treatment step, the pressure in the plasma process chamber is stabilized with the aforementioned purifying gas without shutting off the plasma in the chamber. This eliminates the need to purge and evacuate the plasma process chamber.

Method For Forming Carbon Nanotubes With Intermediate Purification Steps

View page
US Patent:
6841003, Jan 11, 2005
Filed:
Nov 22, 2002
Appl. No.:
10/302206
Inventors:
Sung Gu Kang - San Jose CA, US
Craig Bae - San Jose CA, US
Assignee:
cDream Display Corporation - San Jose CA
International Classification:
C30B 2514
US Classification:
117 92, 117 93, 117102, 117103, 117108, 117921, 117929
Abstract:
Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a purification step is performed on the newly formed nanotube structures. The purification removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The purification is performed with the plasma at the same substrate temperature. For the purification, the hydrogen containing gas added as an additive to the source gas for the plasma chemical deposition is used as the plasma source gas. Because the source gas for the purification plasma is added as an additive to the source gas for the chemical plasma deposition, the grown carbon nanotubes are purified by reacting with the continuous plasma which is sustained in the plasma process chamber. This eliminates the need to purge and evacuate the plasma process chamber as well as to stabilize the pressure with the purification plasma source gas. Accordingly, the growth and the purification may be performed without shutting off the plasma in the plasma process chamber.

Forming Carbon Nanotubes At Lower Temperatures Suitable For An Electron-Emitting Device

View page
US Patent:
7175494, Feb 13, 2007
Filed:
Jun 19, 2003
Appl. No.:
10/600226
Inventors:
Sung Gu Kang - San Jose CA, US
Woo Kyung Bae - San Jose CA, US
Jung Jae Kim - San Jose CA, US
Assignee:
cDream Corporation - San Jose CA
International Classification:
H01J 9/04
US Classification:
445 50, 445 51, 4234471, 4234473, 4234474
Abstract:
An electron-emitting device contains a vertical emitter electrode patterned into multiple laterally separated sections situated between the electron-emissive elements, on one hand, and a substrate, on the other hand. The electron-emissive elements comprising carbon nanotubes are grown at a temperature range of 300 C. to 500 C. compatible with the thermal stress of the underlying substrate. The electron-emissive elements are grown on a granulized catalyst layer that provides a large surface area for growing the electron-emissive elements at such low temperature ranges. To ensure growth uniformity of the carbon nanotubes, the granularized substrate is soaked in a pre-growth plasma gas to enhance the surface diffusion properties of the granularized substrate for carbon diffusion.

Forming Carbon Nanotubes By Iterating Nanotube Growth And Post-Treatment Steps

View page
US Patent:
20050132949, Jun 23, 2005
Filed:
Jan 10, 2005
Appl. No.:
11/034442
Inventors:
Sung Kang - San Jose CA, US
Craig Bae - Campbell CA, US
International Classification:
C30B007/00
C30B021/02
C30B028/06
US Classification:
117068000
Abstract:
Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. The nanotubes are grown by plasma enhanced chemical vapor deposition using a source gas and a plasma and are then purified by plasma etching using a purification gas. These growth and purification steps are repeated without evacuating the chamber and without turning off the plasma. After the nanotubes are grown, a post-treatment step is performed on the nanotubes by etching using the plasma. During the transition from the nanotube growth step to the post treatment step, the pressure in the plasma process chamber is stabilized without turning off the plasma. The entire process or a portion thereof may be iterated to achieve a carbon nanotube layer having highly uniform physical characteristics. Additionally, the etching in the post-treatment step may be reduced each iteration.

Emitter Structure With A Protected Gate Electrode For An Electron-Emitting Device

View page
US Patent:
20050236963, Oct 27, 2005
Filed:
Apr 14, 2005
Appl. No.:
11/107407
Inventors:
Sung Kang - San Jose CA, US
Woo Bae - Campbell CA, US
Jong Son - San Jose CA, US
Chul Chang - San Jose CA, US
Jung Kim - San Jose CA, US
International Classification:
H01J001/62
H01J001/02
H01J063/04
US Classification:
313495000, 313496000, 313311000, 313309000
Abstract:
A cathode structure of a field emission device includes a gate electrode that is protected by a passivation layer. In one method for manufacturing such a field emission device, an emitter hole is formed through an insulating layer such that the passivation layer overhangs the gate layer, which overhangs an insulating layer. When used in a display system, the gate layer is exposed to an emitter electrode but shielded from an anode.

Plasma Enhanced Chemical Vapor Deposition System For Forming Carbon Nanotubes

View page
US Patent:
20060008594, Jan 12, 2006
Filed:
Jul 12, 2004
Appl. No.:
10/889807
Inventors:
Sung Kang - San Jose CA, US
Woo Bae - Campbell CA, US
International Classification:
C23C 16/00
US Classification:
427569000, 11872300E, 427585000
Abstract:
An embodiment of a system for forming carbon nanotubes (CNTs) using plasma enhanced chemical vapor deposition (PECVD) uses one or more of RF and DC power supplies coupled to electrodes in various configurations within a process chamber of the system. By application of a sufficient DC voltage to one or more electrodes, the system allows for growing CNTs that can be straighter and have improved electrical performance characteristics.

Sub-Pixel Current Measurement For Oled Display

View page
US Patent:
20080266214, Oct 30, 2008
Filed:
Jan 23, 2008
Appl. No.:
12/018455
Inventors:
Walter Edward Naugler - Katy TX, US
Sung Gu Kang - San Jose CA, US
Cheon Hong Kim - Sunnyvale CA, US
Assignee:
LEADIS TECHNOLOGY, INC. - Sunnyvale CA
International Classification:
G09G 3/30
US Classification:
345 76
Abstract:
An active matrix drive system drives an emissive display device such as an organic light-emitting diode display and is configured to measure sub-pixel current in the emissive display device. One or more power column power lines of the emissive display device are turned off while sub-pixel current is measured. As a result, the sub-pixel current is relative large compared to the background current of the emissive display device, which facilitates accurate measurement of the sub-pixel current.

Operating Surface Characterization For Integrated Circuits

View page
US Patent:
20150212120, Jul 30, 2015
Filed:
Jan 30, 2014
Appl. No.:
14/168177
Inventors:
- Cupertino CA, US
Sung Wook Kang - Santa Clara CA, US
International Classification:
G01R 19/00
G01R 31/02
Abstract:
A device includes an integrated circuit programmed with an operating surface equation. The operating surface equation may define an operating point as a function of operating voltage, operating frequency, and leakage current. The operating surface equation may be generated by fitting a surface equation to data for operating voltage and operating frequency versus leakage current for a plurality of test integrated circuits. An operating voltage of the integrated circuit at a given operating frequency may be determined by the operating surface equation and a leakage current value fused into the device.

Isbn (Books And Publications)

Xizang Fo Jiao Mi Zong Yi Shu

View page
Author

Sung Kang

ISBN #

7119014080

Control profile
Sung Hee Kang from San Jose, CA, age ~53 Get Report