Sung Ung Kang

6337522, Jan 8, 2002

Jun 30, 1998

09/106780

Sung Kwon Kang - Chappaqua NY
Sampath Purushothaman - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

H01L 23532

257784, 257777, 257778, 257764, 257762, 257772, 257737, 257738, 257789, 257788, 257795, 257673

A new interconnection scheme is disclosed for a tape automated bonding (TAB) package, a flip chip package and an active matrix liquid crystal display (AMLCD) panel, where an electrically conducting adhesive is used to form an electrical interconnection between an active electronic device and its components. The electrically conducting adhesive can be a mixture comprising a polymer resin, a no-clean solder flux, a plurality of electrically conducting particles with an electrically conducting fusible coating which provides a metallurgical bond between the conducting particles as well as to the substrates. The advantages of using the electrically conducting adhesives include reduction in bonding pressure and/or bonding temperature, control of interfacial reactions, promotion of stable metallurgical bonds, enhanced reliability of the joints, and others.

6551931, Apr 22, 2003

Nov 7, 2000

09/706820

Daniel C. Edelstein - White Plains NY
Sung Kwon Kang - Chappaqua NY
Maurice McGlashan-Powell - Yorktown Heights NY
Eugene J. OSullivan - Nyack NY
George F. Walker - New York NY

International Business Machines Corporation - Armonk NY

H01L 2144

438687, 438678, 438679

A method to selectively cap interconnects with indium or tin bronzes and copper oxides thereof is provided. The invention also provides the interconnect and copper surfaces so formed.

6646355, Nov 11, 2003

Jan 7, 2002

10/036462

Sung Kwon Kang - Chappaqua NY
Sampath Purushothaman - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

H01L 23532

257784, 257786, 257778, 257737, 257738, 257764, 257762, 257772, 257789, 257788, 257795, 257673

A new interconnection scheme is disclosed for a tape automated bonding (TAB) package, a flip chip package and an active matrix liquid crystal display (AMLCD) panel, where an electrically conducting adhesive is used to form an electrical interconnection between an active electronic device and its components. The electrically conducting adhesive can be a mixture comprising a polymer resin, a no-clean solder flux, a plurality of electrically conducting particles with an electrically conducting fusible coating which provides a metallurgical bond between the conducting particles as well as to the substrates. The advantages of using the electrically conducting adhesives include reduction in bonding pressure and/or bonding temperature, control of interfacial reactions, promotion of stable metallurgical bonds, enhanced reliability of the joints, and others.

6784088, Aug 31, 2004

Jan 16, 2003

10/345288

Daniel C. Edelstein - White Plains NY
Sung Kwon Kang - Chappaqua NY
Maurice McGlashan-Powell - Yorktown Heights NY
Eugene J. OSullivan - Nyack NY
George F. Walker - New York NY

International Business Machines Corporation - Armonk NY

H01L 2144

438612, 438613, 438614, 438637, 438638, 438666, 438678, 438679, 438686, 438687

A method to selectively cap a cooper BEOL terminal pad with a Cu/Sn/Au alloy. The method includes providing one or more Cu BEOL terminal pads and coating the pads with a Sn coating followed by coating the Sn with a Au coating. The coated pads are then annealed to form the Cu/Sn/Au capping alloy.

6805974, Oct 19, 2004

Feb 15, 2002

10/078020

Won K. Choi - Mount Kisco NY
Charles C. Goldsmith - Poughkeepsie NY
Timothy A. Gosselin - Apalachin NY
Donald W. Henderson - Ithaca NY
Sung K. Kang - Chappaqua NY
Da-Yuan Shih - Poughkeepsie NY

International Business Machines Corporation - Armonk NY

B23K 3526

428646, 428647, 428648, 420560, 420557, 420561, 257780, 257738, 22818022, 228563

A solder composition and associated method of formation. The solder composition comprises a substantially lead-free alloy that includes tin (Sn), silver (Ag), and copper. The tin has a weight percent concentration in the alloy of at least about 90%. The silver has a weight percent concentration X in the alloy. X is sufficiently small that formation of Ag Sn plates is substantially suppressed when the alloy in a liquefied state is being solidified by being cooled to a lower temperature at which the solid Sn phase is nucleated. This lower temperature corresponds to an undercooling T relative to the eutectic melting temperature of the alloy. Alternatively, X may be about 4. 0% or less, wherein the liquefied alloy is cooled at a cooling rate that is high enough to substantially suppress Ag Sn plate formation in the alloy. The copper has a weight percent concentration in the alloy not exceeding about 1. 5%.

6841002, Jan 11, 2005

Nov 22, 2002

10/302126

Sung Gu Kang - San Jose CA, US
Craig Bae - San Jose CA, US

cDream Display Corporation - San Jose CA

C03B 1524

117 92, 117 93, 117102, 117103, 117108, 117921, 117929

Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed nanotube structures. The post-treatment removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The post-treatment is performed with the plasma at the same substrate temperature. For the post-treatment, the hydrogen containing gas is used as a plasma source gas. During the transition from the nanotube growth step to the post-treatment step, the pressure in the plasma process chamber is stabilized with the aforementioned purifying gas without shutting off the plasma in the chamber. This eliminates the need to purge and evacuate the plasma process chamber.

6841003, Jan 11, 2005

Nov 22, 2002

10/302206

Sung Gu Kang - San Jose CA, US
Craig Bae - San Jose CA, US

cDream Display Corporation - San Jose CA

C30B 2514

117 92, 117 93, 117102, 117103, 117108, 117921, 117929

Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a purification step is performed on the newly formed nanotube structures. The purification removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The purification is performed with the plasma at the same substrate temperature. For the purification, the hydrogen containing gas added as an additive to the source gas for the plasma chemical deposition is used as the plasma source gas. Because the source gas for the purification plasma is added as an additive to the source gas for the chemical plasma deposition, the grown carbon nanotubes are purified by reacting with the continuous plasma which is sustained in the plasma process chamber. This eliminates the need to purge and evacuate the plasma process chamber as well as to stabilize the pressure with the purification plasma source gas. Accordingly, the growth and the purification may be performed without shutting off the plasma in the plasma process chamber.

7079393, Jul 18, 2006

Nov 16, 2004

10/904555

Evan G. Colgan - Chestnut Ridge NY, US
Frank L. Pompeo - Redding CT, US
Glenn G. Daves - Fishkill CT, US
Hilton T. Toy - Hopewell Junction NY, US
Bruce K. Furman - Poughquag NY, US
David L. Edwards - Poughkeepsie NY, US
Michael A. Gaynes - Vestal NY, US
Mukta G. Farooq - Hopewell Junction NY, US
Sung K. Kang - Chappaqua NY, US
Steven P. Ostrander - Poughkeepsie NY, US
Jaimal M. Williamson - Wappingers Falls NY, US
Da-Yuan Shih - Poughkeepsie NY, US
Donald W. Henderson - Ithaca NY, US

International Business Machines Corporation - Armonk NY

H05K 7/20

361699, 257714, 165 804, 174 151

A cooling system for an electronic component on a component carrier is provided. The system includes a frame, a spray manifold, and a sealing member. The frame has an opening and is connectable to the component carrier so that an annular area is defined between the opening and the electronic component. The spray manifold is sealed over the opening to define a spray area over a back surface of the electronic component. The spray manifold sprays a cooling fluid on the back surface. The sealing member seals the annular region so that input/output connectors on the component carrier are isolated from the cooling fluid.