Sung T Kang

6841002, Jan 11, 2005

Nov 22, 2002

10/302126

Sung Gu Kang - San Jose CA, US
Craig Bae - San Jose CA, US

cDream Display Corporation - San Jose CA

C03B 1524

117 92, 117 93, 117102, 117103, 117108, 117921, 117929

Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed nanotube structures. The post-treatment removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The post-treatment is performed with the plasma at the same substrate temperature. For the post-treatment, the hydrogen containing gas is used as a plasma source gas. During the transition from the nanotube growth step to the post-treatment step, the pressure in the plasma process chamber is stabilized with the aforementioned purifying gas without shutting off the plasma in the chamber. This eliminates the need to purge and evacuate the plasma process chamber.

6841003, Jan 11, 2005

Nov 22, 2002

10/302206

Sung Gu Kang - San Jose CA, US
Craig Bae - San Jose CA, US

cDream Display Corporation - San Jose CA

C30B 2514

117 92, 117 93, 117102, 117103, 117108, 117921, 117929

Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a purification step is performed on the newly formed nanotube structures. The purification removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The purification is performed with the plasma at the same substrate temperature. For the purification, the hydrogen containing gas added as an additive to the source gas for the plasma chemical deposition is used as the plasma source gas. Because the source gas for the purification plasma is added as an additive to the source gas for the chemical plasma deposition, the grown carbon nanotubes are purified by reacting with the continuous plasma which is sustained in the plasma process chamber. This eliminates the need to purge and evacuate the plasma process chamber as well as to stabilize the pressure with the purification plasma source gas. Accordingly, the growth and the purification may be performed without shutting off the plasma in the plasma process chamber.

7175494, Feb 13, 2007

Jun 19, 2003

10/600226

Sung Gu Kang - San Jose CA, US
Woo Kyung Bae - San Jose CA, US
Jung Jae Kim - San Jose CA, US

cDream Corporation - San Jose CA

H01J 9/04

445 50, 445 51, 4234471, 4234473, 4234474

An electron-emitting device contains a vertical emitter electrode patterned into multiple laterally separated sections situated between the electron-emissive elements, on one hand, and a substrate, on the other hand. The electron-emissive elements comprising carbon nanotubes are grown at a temperature range of 300 C. to 500 C. compatible with the thermal stress of the underlying substrate. The electron-emissive elements are grown on a granulized catalyst layer that provides a large surface area for growing the electron-emissive elements at such low temperature ranges. To ensure growth uniformity of the carbon nanotubes, the granularized substrate is soaked in a pre-growth plasma gas to enhance the surface diffusion properties of the granularized substrate for carbon diffusion.

7187327, Mar 6, 2007

Apr 1, 2004

10/814649

Michael Eugene Coluzzi - Los Angeles CA, US
Sung Phill Kang - La Mirada CA, US

ITT Manufacturing Enterprises, Inc. - Wilmington DE

G01S 3/02
G01S 1/24

342458, 342387

A method and system for determining the location of an object. The system may implement a number of sensors at different locations that are positioned to receive a transmitted or reflected signal from the object. Also disclosed is a system and method of calculating object position based upon the time difference of arrival (TDOA) from each sensor, or the relative time difference of arrival (RTDOA). A known distribution of noise is added to the time of arrival (TOA) prior to calculating the object position.

7272495, Sep 18, 2007

Apr 1, 2004

10/814650

Michael Eugene Coluzzi - Los Angeles CA, US
Bernard Andrew Rees - Sherman Oaks CA, US
Sung Phill Kang - La Mirada CA, US

ITT Manufacturing Enterprises, Inc. - Wilmington DE

G01C 21/26
G01S 3/00

701207, 701200, 342450, 34235709, 340988

A method and system for location-determination of a mobile comprising of a receiver with a variable processor gain of up to 45. 15 dB for detecting signals transmitted from transmitters that at a farther distance as well as from transmitters that are situated in sparsely populated areas. The system also includes a plurality of terrestrially deployed transmitters known as “pseudolites” that broadcast GPS-like signals, and in addition implementing the use of existing, available information from modulated signals, such as phase, amplitude and convolution with pseudorandom codes.

20050132949, Jun 23, 2005

Jan 10, 2005

11/034442

Sung Kang - San Jose CA, US
Craig Bae - Campbell CA, US

C30B007/00
C30B021/02
C30B028/06

117068000

Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. The nanotubes are grown by plasma enhanced chemical vapor deposition using a source gas and a plasma and are then purified by plasma etching using a purification gas. These growth and purification steps are repeated without evacuating the chamber and without turning off the plasma. After the nanotubes are grown, a post-treatment step is performed on the nanotubes by etching using the plasma. During the transition from the nanotube growth step to the post treatment step, the pressure in the plasma process chamber is stabilized without turning off the plasma. The entire process or a portion thereof may be iterated to achieve a carbon nanotube layer having highly uniform physical characteristics. Additionally, the etching in the post-treatment step may be reduced each iteration.

20050236963, Oct 27, 2005

Apr 14, 2005

11/107407

Sung Kang - San Jose CA, US
Woo Bae - Campbell CA, US
Jong Son - San Jose CA, US
Chul Chang - San Jose CA, US
Jung Kim - San Jose CA, US

H01J001/62
H01J001/02
H01J063/04

313495000, 313496000, 313311000, 313309000

A cathode structure of a field emission device includes a gate electrode that is protected by a passivation layer. In one method for manufacturing such a field emission device, an emitter hole is formed through an insulating layer such that the passivation layer overhangs the gate layer, which overhangs an insulating layer. When used in a display system, the gate layer is exposed to an emitter electrode but shielded from an anode.

20060008594, Jan 12, 2006

Jul 12, 2004

10/889807

Sung Kang - San Jose CA, US
Woo Bae - Campbell CA, US

C23C 16/00

427569000, 11872300E, 427585000

An embodiment of a system for forming carbon nanotubes (CNTs) using plasma enhanced chemical vapor deposition (PECVD) uses one or more of RF and DC power supplies coupled to electrodes in various configurations within a process chamber of the system. By application of a sufficient DC voltage to one or more electrodes, the system allows for growing CNTs that can be straighter and have improved electrical performance characteristics.