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Subhendu Guha

from Bloomfield Hills, MI
Age ~82
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Also known as:
Guha Subhendu, Guma Subhendu, E Guha
Phone and address:
437 Five Gaits Ct, Bloomfield, MI 48304
(248) 332-8457
Related to:
John C KnollJames KnollFrederick SelbyMona L Selby, 100Perry Mcmillian, 39Shelia Thomas, 63
Connected to:
Akash Guha, 49Anna M Guha, 50Anurag Guha, 40Aparupa Guha, 49Baishali Guha, 57Debmalya Guha, 48Devashish Guha, 38Gopa Guha, 49Jaideep Guha, 47Joydeep Guha, 44

Subhendu Guha Phones & Addresses

  • 437 Five Gaits Ct, Bloomfield Hills, MI 48304 (248) 332-8457
  • Bloomfield, MI
  • Rochester Hills, MI
  • Troy, MI
  • Clawson, MI
  • Bloomfld Hls, MI
  • 437 Five Gaits Ct, Bloomfield, MI 48304 (248) 563-7169

Work

Position: Retired

Education

Degree: Graduate or professional degree

Business Records

Name / Title
Company / Classification
Phones & Addresses
Subhendu Guha
ManagingChairman, President
UNITED SOLAR OVONIC CORP
Design Develop Manufacture & Sell Photov · Design Manufacture and Sell Photovoltaic · Manufacture of Solar Products · Mfg Semiconductors/Related Devices
3800 Lapeer Rd, Auburn Hills, MI 48326
2956 Waterview Dr, Rochester, MI 48309
(248) 475-0100, (248) 364-5756

Publications

Us Patents

Method Of Manufacturing Lightweight, High Efficiency Photovoltaic Module

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US Patent:
6468828, Oct 22, 2002
Filed:
Jun 9, 2000
Appl. No.:
09/591133
Inventors:
Troy Glatfelter - Royal Oak MI
Subhendu Guha - Troy MI
Assignee:
Sky Solar L.L.C. - Troy MI
International Classification:
H01L 31042
US Classification:
438 80, 438 85, 438 98, 438 66, 438 69, 136249, 136244, 136251, 136256, 257436, 257437, 257443
Abstract:
A photovoltaic device includes a transparent, electrically conductive top electrode which functions as an anti-reflective layer. The thickness of this layer is selected to establish a three-quarter anti-reflective condition. Use of this layer allows for the manufacture of a gridless photovoltaic device having an enhanced overall efficiency.

Method For Manufacturing High Efficiency Photovoltaic Devices At Enhanced Depositions Rates

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US Patent:
6468829, Oct 22, 2002
Filed:
May 8, 2001
Appl. No.:
09/850836
Inventors:
Subhendu Guha - Bloomfield Hills MI
Chi C. Yang - Troy MI
Kenneth Lord - Rochester Hills MI
Assignee:
United Solar Systems Corporation - Troy MI
International Classification:
H01L 2100
US Classification:
438 96
Abstract:
A P-I-N type photovoltaic device is manufactured by a process wherein the deposition rate of the intrinsic layer is controlled so that a portion of the intrinsic layer which is closest to the P-I interface, and which comprises at least 10% of the thickness of the intrinsic layer, is deposited at a rate which is less than the average rate at which the entire intrinsic layer is deposited.

Lightweight Semiconductor Device And Method For Its Manufacture

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US Patent:
6767762, Jul 27, 2004
Filed:
Jul 23, 2002
Appl. No.:
10/201095
Inventors:
Subhendu Guha - Bloomfield Hills MI
Assignee:
United Solar Systems Corporation - Troy MI
International Classification:
H01L 2144
US Classification:
438113, 438459
Abstract:
An ultra lightweight semiconductor device comprises a substrate electrode, a body of semiconductor material, and a top electrode, and is manufactured by a process wherein the thickness dimension of a portion of the substrate electrode is decreased so as to reduce the weight of the device. The portions of the device having a thick substrate serve to support and reinforce the device during processing and handling. These portions may subsequently be severed away to further reduce the weight of the device. Also disclosed are configurations of ultra lightweight semiconductor devices.

Photovoltaic Roofing Structure

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US Patent:
6875914, Apr 5, 2005
Filed:
Jan 13, 2003
Appl. No.:
10/341263
Inventors:
Subhendu Guha - Bloomfield Hills MI, US
Tim Ellison - Royal Oak MI, US
Assignee:
United Solar Systems Corporation - Auburn Hills MI
International Classification:
H01L031/048
H01L031/05
US Classification:
136251, 136244, 136291, 521733, 257433
Abstract:
A photovoltaic roofing system includes front surface electrical connections and can be installed utilizing conventional tools and techniques. The system includes particularly configured photovoltaic power generating roofing shingles which provide for linearly aligned electrical terminals when installed. The system may be used in conjunction with a protective cap which shields the connections.

Ultra Lightweight Photovoltaic Device And Method For Its Manufacture

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US Patent:
7517465, Apr 14, 2009
Filed:
Oct 20, 2005
Appl. No.:
11/254838
Inventors:
Subhendu Guha - Bloomfield Hills MI, US
Arindam Banerjee - Bloomfield Hills MI, US
Kevin Beernink - Clarkston MI, US
Todd Johnson - Royal Oak MI, US
Ginger Pietka - Harrison Township MI, US
Gregory DeMaggio - Ann Arbor MI, US
Shengzhong (Frank) Liu - Rochester Hills MI, US
Jeffrey Yang - Troy MI, US
Assignee:
United Solar Ovonic LLC - Auburn Hills MI
International Classification:
B29D 11/00
H01L 31/06
US Classification:
216 24, 216 41, 216 83, 438745, 136243, 136245, 136251, 136261, 136262
Abstract:
An ultra lightweight semiconductor device such as a photovoltaic device is fabricated on a non-etchable barrier layer which is disposed upon an etchable substrate. The device is contacted with an appropriate etchant for a period of time sufficient to remove at least a portion of the thickness of the substrate. The barrier layer prevents damage to the photovoltaic material during the etching process. Photovoltaic devices fabricated by this method have specific power levels in excess of 300 w/kg.

Method For Depositing High-Quality Microcrystalline Semiconductor Materials

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US Patent:
7902049, Mar 8, 2011
Filed:
Jan 27, 2004
Appl. No.:
10/765435
Inventors:
Subhendu Guha - Bloomfield Hills MI, US
Chi C. Yang - Troy MI, US
Baojie Yan - Rochester Hills MI, US
Assignee:
United Solar Ovonic LLC - Auburn Hills MI
International Classification:
H01L 21/00
US Classification:
438485, 438486, 438487, 438482, 438488, 438 96, 438 97
Abstract:
A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Method And Apparatus For The Laser Scribing Of Ultra Lightweight Semiconductor Devices

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US Patent:
7964476, Jun 21, 2011
Filed:
Mar 24, 2008
Appl. No.:
12/053712
Inventors:
Shengzhong Liu - Rochester Hills MI, US
Ginger Pietka - Harrison Township MI, US
Kevin Beernink - Clarkston MI, US
Arindam Banerjee - Bloomfield Hills MI, US
Chi Yang - Troy MI, US
Subhendu Guha - Bloomfield Hills MI, US
Assignee:
United Solar Ovonic LLC - Auburn Hills MI
International Classification:
H01L 21/00
US Classification:
438463, 438460
Abstract:
A system for the laser scribing of semiconductor devices includes a laser light source operable to selectably deliver laser illumination at a first wavelength and at a second wavelength which is shorter than the first wavelength. The system further includes a support for a semiconductor device and an optical system which is operative to direct the laser illumination from the light source to the semiconductor device. The optical system includes optical elements which are compatible with the laser illumination of the first wavelength and the laser illumination of the second wavelength. In specific instances, the first wavelength is long wavelength illumination such as illumination of at least 1000 nanometers, and the second wavelength is short wavelength illumination which in specific instances is 300 nanometers or shorter. By the use of the differing wavelengths, specific layers of the semiconductor device may be scribed without damage to subjacent layers. Also disclosed are specific scribing processes.

Support System For Photovoltaic Device And Method For Its Use

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US Patent:
20050166955, Aug 4, 2005
Filed:
Dec 8, 2004
Appl. No.:
11/006959
Inventors:
Prem Nath - Rochester Hills MI, US
Subhendu Guha - Bloomfield Hills MI, US
International Classification:
H01L025/00
US Classification:
136251000, 052173300
Abstract:
A support system for retaining a photovoltaic device on a generally planar surface, without any mechanical connection to the surface, includes a frame assembly which rests upon the surface and supports one or more photovoltaic devices in a spaced apart relationship with the surface. At least one ballast pan is attached to the frame assembly. The ballast pan is configured to retain a ballast material therein. The ballast pan may comprise a peripheral ballast pan which extends along the perimeter of the assembly or it may comprise an internal ballast pan which is disposed beneath the photovoltaic device. Also disclosed herein is a method for using the support system.
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Subhendu Guha from Bloomfield Hills, MI, age ~82 Get Report