Resumes
Resumes
Steven Herschbein Phones & Addresses
-
21 Baker Rd, Hopewell Jct, NY 12533 (845) 226-8031
-
Hopewell Junction, NY
-
Poughquag, NY
-
21 Baker Rd, Hopewell Junction, NY 12533
Work
Position:
Professional/Technical
Education
Degree:
Graduate or professional degree
Publications
Us Patents
Focused Ion Beam Process For Removal Of Copper
View pageUS Patent:
6730237, May 4, 2004
Filed:
Jun 22, 2001
Appl. No.:
09/887791
Inventors:
Michael R. Sievers - Holmes NY
Steven B. Herschbein - Hopewell Junction NY
Aaron D. Shore - Poughkeepsie NY
Steven B. Herschbein - Hopewell Junction NY
Aaron D. Shore - Poughkeepsie NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
C23F 100
US Classification:
216 62, 216 66, 216 78, 20412934
Abstract:
A process for milling copper metal from a substrate having an exposed copper surface includes absorbing a halogen gas onto the exposed copper surface to generate reaction products of copper and the halogen gas; removing unreacted halogen gas from the surface; and directing a focused ion beam onto the surface to selectively remove a portion of the surface comprising the reaction products.
Metal Dry Etch Using Electronic Field
View pageUS Patent:
6843893, Jan 18, 2005
Filed:
Dec 12, 2002
Appl. No.:
10/317679
Inventors:
Steven B. Herschbein - Hopewell Junction NY, US
Herschel M. Marchman - Poughquag NY, US
Chad Rue - Poughkeepsie NY, US
Michael R. Sievers - Poughkeepsie NY, US
Herschel M. Marchman - Poughquag NY, US
Chad Rue - Poughkeepsie NY, US
Michael R. Sievers - Poughkeepsie NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
C10B 100
H01L 21302
H01L 21302
US Classification:
204224M, 15634511, 15634539, 1563454
Abstract:
A method and structure for an apparatus for removing metal from an integrated circuit structure is disclosed. A container holds an integrated circuit structure that has a metal portion. An electronic device connected to the container produces an electronic field proximate to a limited region of the metal portion. A first supply connected to the container supplies an oxidizing agent within the container. A solvent supply connected to the container supplies solvent to the limited region of the metal portion.
Method For Electrically Characterizing Charge Sensitive Semiconductor Devices
View pageUS Patent:
6858530, Feb 22, 2005
Filed:
Jun 30, 2003
Appl. No.:
10/609789
Inventors:
Terence Kane - Wappingers Falls NY, US
Lawrence S. Fischer - Poughkeepsie NY, US
Steven B. Herschbein - Hopewell Junction NY, US
Ying Hong - San Jose CA, US
Michael P. Tenney - Poughkeepsie NY, US
Lawrence S. Fischer - Poughkeepsie NY, US
Steven B. Herschbein - Hopewell Junction NY, US
Ying Hong - San Jose CA, US
Michael P. Tenney - Poughkeepsie NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L021/4763
US Classification:
438632
Abstract:
A method and structure for the electrical characterization of a semiconductor device comprising, first, forming a hole having a diameter less than 0. 15 μm, wherein the hole is created using focused ion beam (FIB) etching, and through at least a protective cap layer formed over the device. The FIB etching occurs in an electron mode using a beam current less than 35 ρA with an aperture size less than 50 μm, and at an acceleration voltage of about 50 kV. Second, the surface of the hole is coated with a metal, preferably using chemical vapor deposition (CVD) and preferably using a FIB device. Third, a metal pad is deposited, preferably by FIB CVD, over the hole. Fourth, the pad is probed to determine characteristics and/or detect defects of the electrical device. The present invention allows for electrical characterization without causing damage to the device or its features.
Dry Etch Process To Edit Copper Lines
View pageUS Patent:
6900137, May 31, 2005
Filed:
Mar 28, 2003
Appl. No.:
10/249289
Inventors:
Steven B. Herschbein - Hopewell Junction NY, US
Ville S. Kiiskinen - Newburgh NY, US
Chad Rue - Poughkeepsie NY, US
Carmelo F. Scrudato - Ossining NY, US
Michael R. Sievers - Poughkeepsie NY, US
Ville S. Kiiskinen - Newburgh NY, US
Chad Rue - Poughkeepsie NY, US
Carmelo F. Scrudato - Ossining NY, US
Michael R. Sievers - Poughkeepsie NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01I021/302
US Classification:
438712, 438705, 438714, 438717, 438725, 438734, 216 62, 216 66
Abstract:
The present invention is directed to methods for editing copper features embedded within an organic body by exposing at least a portion of a top surface of the copper feature, forming a mill box there-over and then simultaneously milling both the copper feature and any organic material exposed through the mill box in a single step using an ion beam in combination with a XeFgas for a dwell time of at least 10 milliseconds. The invention dramatically increases the efficiency of Focused Ion Beam milling of copper features embedded in organic layers by milling these features in a gas-depleted environment at significantly increased dwell time while avoiding the problems of graphitization, destruction of the organic layer and metal redeposition.
Sample Mount For Performing Sputter-Deposition In A Focused Ion Beam (Fib) Tool
View pageUS Patent:
6946064, Sep 20, 2005
Filed:
Jul 8, 2003
Appl. No.:
10/604272
Inventors:
Lawrence S. Fischer - Poughkeepsie NY, US
Steven B. Herschbein - Hopewell Junction NY, US
Chad Rue - Poughkeepsie NY, US
Steven B. Herschbein - Hopewell Junction NY, US
Chad Rue - Poughkeepsie NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
C23C014/34
B23Q003/18
B23Q003/18
US Classification:
20429815, 20429804, 269 58
Abstract:
A method and structure for a sample processing apparatus that uses a vacuum enclosure is disclosed. A focused ion beam tool, sputter target, movable stage, and hinged mount are all included within the vacuum enclosure. The hinged mount includes a sample mounting portion, for holding a sample being processed in the vacuum enclosure, and a counterweight portion. The counterweight portion is connected to the sample mounting portion at an approximate right angle to the sample mounting portion. More specifically, one end of the sample mounting portion is connected to one end of the counterweight portion, such that the sample mounting portion and the counterweight portion form an approximate right angle. There is also an axis around which the mount rotates. The axis passes through the sample mounting portion and the counterweight portion at a location where the sample mounting portion and the counterweight portion connect to one another.
Semiconductor Copper Line Cutting Method
View pageUS Patent:
6987067, Jan 17, 2006
Filed:
Aug 21, 2002
Appl. No.:
10/225517
Inventors:
Lawrence Fischer - Poughkeepsie NY, US
Steven B. Herschbein - Hopewell Junction NY, US
Steven B. Herschbein - Hopewell Junction NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/302
H01L 21/461
H01L 21/461
US Classification:
438712, 438742, 216 66, 216 78, 20419234, 20429836
Abstract:
A method of repairing a semiconductor chip containing copper is taught, whereby copper is selectively removed from the chip. The method involves processing the chip inside a chamber in which the chip is exposed to various gases and an energy source, such as a focused ion beam. To the extent the chip may have non-copper materials, such as nitride and oxide layers, on top of the copper that is to be removed, those non-copper materials will first be selectively removed. Such removal typically results in a hole (a so-called “elevator shaft”) leading to the copper that is to be removed. Next, the method teaches the introduction of a combination of nitrogen and oxygen into the chamber and the directing of the ion beam at the spot where the copper is to be removed. In this manner, the copper on the chip is cleanly and reliably removed, without causing damage to the processing chamber.
Ion Detector For Ion Beam Applications
View pageUS Patent:
7119333, Oct 10, 2006
Filed:
Nov 10, 2004
Appl. No.:
10/904438
Inventors:
Steven B. Herschbein - Hopewell Junction NY, US
Narender Rana - Albany NY, US
Chad Rue - Poughkeepsie NY, US
Michael R. Sievers - Poughkeepsie NY, US
Narender Rana - Albany NY, US
Chad Rue - Poughkeepsie NY, US
Michael R. Sievers - Poughkeepsie NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G01N 23/225
H01J 37/00
H01J 37/00
US Classification:
250309, 250397, 25049221
Abstract:
Detection of weak ion currents scattered from a sample by an ion beam is improved by the use of a multiplier system in which a conversion electrode converts incident ions to a number of secondary electrons multiplied by a multiplication factor, the secondary electrons being attracted to an electron detector by an appropriate bias. In one version, the detector is a two stage system, in which the secondary electrons strike a scintillator that emits photons that are detected in a photon detector such as a photomultiplier or a CCD.
High-Resolution Optical Channel For Non-Destructive Navigation And Processing Of Integrated Circuits
View pageUS Patent:
7351966, Apr 1, 2008
Filed:
May 23, 2006
Appl. No.:
11/419811
Inventors:
Herschel M. Marchman - Austin TX, US
Steven B. Herschbein - Hopewell Junction NY, US
Chad Rue - Poughkeepsie NY, US
Michael Renner - Highland NY, US
Narender Rana - Albany NY, US
Steven B. Herschbein - Hopewell Junction NY, US
Chad Rue - Poughkeepsie NY, US
Michael Renner - Highland NY, US
Narender Rana - Albany NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01J 37/244
US Classification:
250306, 250309, 250310
Abstract:
An optical-fiber based light channel system is included in an ion/electron beam tool for imaging and/or processing integrated circuits. The optical channel system includes an image collection portion, an optical fiber image transmission portion and a detector portion. The image collection portion includes micro-optical components and has submillimeter dimensions, so that it is easily accommodated within the working distance of the ion/electron beam tool. The entire system is sufficiently compact and lightweight so that it may easily be mounted on a translation stage inside the sample chamber, which permits the optical channel to be mechanically extended and retracted to avoid blocking the primary ion or electron beam. The system may be mounted to a translation stage or to a gas injector assembly, which may itself be mounted to a flange plate on the chamber wall with feed-through ports for electrical and optical signals.