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Stephen Mark Rossnagel

from Palmyra, VA
Age ~70
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Also known as:
Stephen M Rossnagel, Steven Rossnagel, Steph Rossnagel, Rossnagel Steph
Phone and address:
9 Lakeview Cir, Bybee, VA 22963
Related to:
Andrew I Rossnagel, 35Jennifer M Williams, 45Amy Rossnagel, 40Amy Williams, 40Philip K Rossnagel, 37Nicholas L Williams, 42Jeffrey P Williams, 47Nancy B Rossnagel, 73
Connected to:
Alyssa A Rossnagel, 43Lauren B Rossnan, 37Louis W Rossnan, 78Susan G Rossnan, 77Keri R Rossner, 47Patricia Rossner, 42Petra M Rossner, 44David W Rossney, 64Robert B Rossney, 63Adrian D Rosso, 60

Stephen Rossnagel Phones & Addresses

  • 9 Lakeview Cir, Palmyra, VA 22963
  • New York, NY
  • 49 Ashland Ave, Pleasantville, NY 10570 (914) 773-0244
  • 100 Nannahagan Rd, Pleasantville, NY 10570 (914) 773-0244
  • White Plains, NY
  • Croton on Hudson, NY
  • Fort Collins, CO
  • Westchester, NY

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Stephen Rossnagel

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Publications

Us Patents

Method Of Controlling Gas Density In An Ionized Physical Vapor Deposition Apparatus

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US Patent:
6342132, Jan 29, 2002
Filed:
Oct 29, 1999
Appl. No.:
09/430830
Inventors:
Stephen Mark Rossnagel - Pleasantville NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
C23C 1435
US Classification:
20419212, 20419213
Abstract:
Gas rarefaction, and loss of ionization efficiency, resulting from magnetron sputtering in IPVD may be avoided by operating the magnetron in a pulsed fashion, rather than in a steady state, during the deposition process. The magnetron is powered during a first time period to produce a flux of atoms which heat the gas, and depowered during a second time period. The gas flows through the device during the powering step and the depowering step so as to prevent rarefaction of the gas by heating. The flow of gas through the device is characterized by a residence time. If the residence time is given as , and the first time period and the second time period are substantially equal, the operation of the magnetron may be characterized by a frequency of 1/. The second time period may be greater than the first time period.

Method For Forming An Open-Bottom Liner For A Conductor In An Electronic Structure And Device Formed

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US Patent:
6380075, Apr 30, 2002
Filed:
Sep 29, 2000
Appl. No.:
09/676546
Inventors:
Cyril Cabral, Jr. - Ossining NY
Chao-Kun Hu - Sommers NY
Sandra Guy Malhotra - Beacon NY
Fenton Read McFeely - Ossining NY
Stephen Mark Rossnagel - Pleasantville NY
Andrew Herbert Simon - Fishkill NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 214763
US Classification:
438637, 438627, 438643, 438653
Abstract:
A method for forming an open-bottom liner for a conductor in an electronic structure and devices formed are disclosed. In the method, a pre-processed electronic substrate that has a dielectric layer on top is first provided. Via openings are then formed in a dielectric layer to expose an underlying conductive layer. The electronic substrate is then positioned in a cold-wall, low pressure chemical vapor deposition chamber, while the substrate is heated to a temperature of at least 350Â C. A precursor gas is then flowed into the CVD chamber to a partial pressure of not higher than 10 mTorr, and metal is deposited from the precursor gas onto sidewalls of the via openings while bottoms of the via openings are substantially uncovered by the metal. The present invention method may be further enhanced by, optionally, modifications of a I-PVD technique or a seed layer deposition technique.

Atomic Layer Deposition Of Metallic Contacts, Gates And Diffusion Barriers

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US Patent:
6943097, Sep 13, 2005
Filed:
Aug 19, 2003
Appl. No.:
10/643534
Inventors:
Cyril Cabral, Jr. - Ossining NY, US
Hyungjun Kim - Lagrangeville NY, US
Stephen M. Rossnagel - Pleasantville NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L021/285
US Classification:
438485, 438513, 438538, 438565, 438569, 438655, 438656, 438664, 438682, 438683, 438685, 438785
Abstract:
The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic silicides and a plasma-enhanced atomic layer deposition (PE-ALD) method of forming metallic silicon nitride film. The methods of the present invention are capable of forming metallic films having a thickness of a monolayer or less on the surface of a substrate. The metallic films provided in the present invention can be used for contact metallization, metal gates or as a diffusion barrier.

Crystallographic Modification Of Hard Mask Properties

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US Patent:
7001835, Feb 21, 2006
Filed:
Nov 21, 2003
Appl. No.:
10/707119
Inventors:
Lawrence A. Clevenger - LaGrangeville NY, US
Andrew P. Cowley - Wappingers Falls NY, US
Timothy J. Dalton - Ridgefield CT, US
Mark Hoinkis - Fishkill NY, US
Steffen K. Kaldor - Fishkill NY, US
Kaushik A. Kumar - Beacon NY, US
Stephen M. Rossnagel - Pleasantville NY, US
Andrew H. Simon - Fishkill NY, US
Douglas C. La Tulipe, Jr. - Danbury CT, US
Assignee:
International Business Machines Corporation - Armonk NY
Infineon Technologies, AG - Munich
International Classification:
H01L 21/4763
US Classification:
438618, 438637
Abstract:
A hardmask layer in the back end of an integrated circuit is formed from TaN having a composition of less than 50% Ta and a resistivity greater than 400 μOhm-cm, so that it is substantially transparent in the visible and permits visual alignment of upper and lower alignment marks through the hardmask and intervening layer(s) of ILD. A preferred method of formation of the hardmask is by sputter deposition of Ta in an ambient containing Nand a flow rate such that (Nflow)/(N+carrier flow)>0. 5.

Ald Deposition Of Ruthenium

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US Patent:
7074719, Jul 11, 2006
Filed:
Nov 28, 2003
Appl. No.:
10/724438
Inventors:
Hyungiun Kim - Lagrangeville NY, US
Stephen M. Rossnagel - Pleasantville NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/44
US Classification:
438687
Abstract:
A method to deposit nucleation problem free ruthenium by ALD. The nucleation problem free, relatively smooth ruthenium ALD film is deposited by the use of plasma-enhanced ALD of ruthenium underlay for consequent thermal ruthenium ALD layer. In addition, oxygen or nitrogen plasma treatments of SiOor other dielectrics leads to uniform ALD ruthenium deposition. The method has application as a direct plating layer for a copper interconnect or metal gate structure for advanced CMOS devices.

Interconnect Structure Diffusion Barrier With High Nitrogen Content

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US Patent:
7098537, Aug 29, 2006
Filed:
Nov 21, 2003
Appl. No.:
10/707117
Inventors:
Cyril Cabral, Jr. - Ossining NY, US
Steffen K. Kaldor - Fishkill NY, US
Hyungjun Kim - Lagrangeville NY, US
Stephen M. Rossnagel - Pleasantville NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 23/52
H01L 23/48
US Classification:
257751, 257758, 257753
Abstract:
In an interconnect structure of an integrated circuit, a diffusion barrier film in a damascene structure is formed of a film having the composition TaN, where x is greater than 1. 2 and with a thickness of 0. 5 to 5 nm.

Plasma Enhanced Ald Of Tantalum Nitride And Bilayer

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US Patent:
7186446, Mar 6, 2007
Filed:
Oct 31, 2003
Appl. No.:
10/699226
Inventors:
Hyungjun Kim - Lagrangeville NY, US
Andrew J. Kellock - Sunnyvale CA, US
Stephen M. Rossnagel - Pleasantville NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H05H 1/24
US Classification:
427569, 427576
Abstract:
A method to deposit TaN by plasma enhanced layer with various nitrogen content. Using a mixture of hydrogen and nitrogen plasma, the nitrogen content in the film can be controlled from 0 to N/Ta=1. 7. By turning off the nitrogen flow during deposition of TaN, a TaN/Ta bilayer is easily grown, which has copper diffusion barrier properties superior to those of a single Ta layer or a single TaN layer.

Pe-Ald Of Tan Diffusion Barrier Region On Low-K Materials

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US Patent:
7211507, May 1, 2007
Filed:
Jun 2, 2004
Appl. No.:
10/709865
Inventors:
Derren N. Dunn - Fishkill NY, US
Hyungjun Kim - Lagrangeville NY, US
Stephen M. Rossnagel - Pleasantville NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/285
US Classification:
438627, 438653, 257E21584
Abstract:
Methods of depositing a tantalum-nitride (TaN) diffusion barrier region on low-k materials. The methods include forming a protective layer on the low-k material substrate by performing plasma-enhanced atomic layer deposition (PE-ALD) from tantalum-based precursor and a nitrogen plasma in a chamber. The protective layer has a nitrogen content greater than its tantalum content. A substantially stoichiometric tantalum-nitride layer is then formed by performing PE-ALD from the tantalum-based precursor and a plasma including hydrogen and nitrogen. The invention also includes the tantalum-nitride diffusion barrier region so formed. In one embodiment, the metal precursor includes tantalum penta-chloride (TaCl). The invention generates a sharp interface between low-k materials and liner materials.

Isbn (Books And Publications)

Thin Films: Modeling of Film Deposition for Microelectronic Applications

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Author

Stephen Rossnagel

ISBN #

0125330227

Thin Films

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Author

Stephen Rossnagel

ISBN #

0125330251

Frontiers of Thin Film Technology

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Author

Stephen M. Rossnagel

ISBN #

0125330286

Non-Crystalline Films for Device Structures

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Author

Stephen M. Rossnagel

ISBN #

0125330294

Handbook of Plasma Processing Technology: Fundamentals, Etching, Deposition, and Surface Interactions

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Author

Stephen M. Rossnagel

ISBN #

0815512201

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Stephen Mark Rossnagel from Palmyra, VA, age ~70 Get Report