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Stacy J Kowsz

from Hammondsport, NY
Age ~37
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Related to:
Harriet C PalmerTracy PalmerRobert A Palmer, 95
Connected to:
Keith N Kowta, 56Michael B Kowtko, 67Walter E Kowtoniuk, 42Pete Kowtun, 69Edwin Kowynia, 66Margaret Kowynia, 58Maureen M Kowzan, 41Ann C Kox, 60Antone Kox, 37Donald C Koy, 89

Stacy Kowsz Phones & Addresses

  • Hammondsport, NY
  • Detroit, MI
  • Goleta, CA
  • 217 Martin Rd, Hebron, CT 06248 (860) 228-1637

Work

Company: Uc santa barbara 2010 Position: Graduate student reseacher

Education

Degree: Doctor of Philosophy (Ph.D.) School / High School: University of California, Santa Barbara 2010 to 2015 Specialities: Materials Engineering

Languages

English

Industries

Research

Resumes

Resumes

Stacy Kowsz Photo 1

Associate

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Location:
25 Arlington Ave, Santa Barbara, CA 93101
Industry:
Research
Work:
UC Santa Barbara since 2010
Graduate Student Reseacher
Rochester Institute of Technology Mar 2010 - Aug 2010
Undergraduate Researcher (Microsystems Engineering)
Rochester Institute of Technology Jan 2010 - Mar 2010
Undergraduate Researcher (Imaging Science)
Xerox - Webster, NY Jun 2009 - Nov 2009
Co-op
Rochester Institute of Technology Jan 2009 - Mar 2009
Undergraduate Researcher (Chemistry)
Education:
University of California, Santa Barbara 2010 - 2015
Doctor of Philosophy (Ph.D.), Materials Engineering Rochester Institute of Technology 2005 - 2010
Bachelor of Science (B.S.), Chemistry
Languages:
English

Publications

Us Patents

Binderless Overcoat Layer

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US Patent:
20100015540, Jan 21, 2010
Filed:
Sep 25, 2009
Appl. No.:
12/567640
Inventors:
Edward C. Savage - Webster NY, US
Marc J. LiVecchi - Rochester NY, US
Robert W. Hedrick - Spencerport NY, US
Linda L. Ferrarese - Rochester NY, US
Sherri A. Toates - Webster NY, US
Stacy J. Kowsz - Hebron CT, US
Assignee:
XEROX CORPORATION - Norwalk CT
International Classification:
G03G 5/06
US Classification:
430 588, 430 66
Abstract:
Embodiments pertain to a novel imaging member, namely, an imaging member or photoreceptor comprising a binderless overcoat layer which exhibits substantially improved electrical performance, such as low residual potential and good electrical cyclic stability. The overcoat layer of the present embodiments is formed from a formulation comprising a small transport molecule, a crosslinking agent, an acid catalyst and a solvent.

Iii-Nitride Light Emitting Diodes With Tunnel Junctions Wafer Bonded To A Conductive Oxide And Having Optically Pumped Layers

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US Patent:
20200335663, Oct 22, 2020
Filed:
Feb 6, 2017
Appl. No.:
16/075949
Inventors:
- Oakland CA, US
Stacy J. Kowsz - Goleta CA, US
Robert M. Farrell - Goleta CA, US
Benjamin P. Yonkee - Goleta CA, US
Erin C. Young - Santa Barbara CA, US
Christopher D. Pynn - Goleta CA, US
Tal Margalith - Santa Barbara CA, US
James S. Speck - Santa Barbara CA, US
Shuji Nakamura - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 33/32
H01L 25/075
H01L 33/06
H01L 33/00
H01S 5/04
H01S 5/30
H01S 5/343
H01S 5/40
Abstract:
A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.
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Stacy J Kowsz from Hammondsport, NY, age ~37 Get Report