US Patent:
20170263733, Sep 14, 2017
Inventors:
- Grand Cayman, KY
Bingwu LIU - Clifton Park NY, US
Johannes Marinus VAN MEER - Delmar NY, US
Sruthi MURALIDHARAN - Troy NY, US
Assignee:
GLOBALFOUNDRIES Inc. - Grand Cayman
International Classification:
H01L 29/66
H01L 21/3213
H01L 21/324
H01L 21/02
H01L 29/78
H01L 21/265
H01L 21/266
H01L 21/268
H01L 21/3105
Abstract:
The invention provides a method of forming a semiconductor structure, which include: providing an intermediate semiconductor structure having semiconductor substrate, a fin having an EG oxide layer in contact with at least a portion of the fin, and a gate stack disposed over a portion of the fin; forming a silicon nitride layer over portions of the fin that are not located under the gate stack; and after forming the silicon nitride layer, performing one or more ion implantation steps on the intermediate semiconductor structure. The invention also provides a method of forming a semiconductor structure including: providing an intermediate semiconductor structure having a semiconductor substrate, a fin having an EG oxide layer in contact with at least a portion of the fin, and a gate material disposed over the fin; forming, over the fin and gate material of the intermediate semiconductor structure, a gate stack hardmask including an oxide layer; forming a silicon nitride barrier layer on the oxide layer of the gate stack hardmask; performing one or more gate stack hardmask patterning steps; removing the EG oxide layer from portions of the fin that are not located under the gate; and subsequent to removing the EG oxide layer from portions of the fin that are not located under the gate, performing one or more ion implantation steps.