Inventors:
Srikanth B. Samavedam - Austin TX
Philip J. Tobin - Austin TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 2144
US Classification:
438652, 438655, 438656, 438657, 438682, 438683, 438592, 257751, 257755, 257754
Abstract:
A semiconductor device and a process for forming the device includes a conductor that overlies an insulating layer. In one embodiment, the conductor includes a first conductive portion, a second conductive portion, and a third conductive portion. The second conductive portion lies between the first and third conductive portions. The first conductive portion includes a first element, and the third conductive portion includes a metal and silicon without a significant amount of the first element. In another embodiment, the conductor is a gate electrode or a capacitor electrode. The conductor includes a first conductive portion, a second conductive portion, a third conductive portion, and a fourth conductive portion. The second conductive portion lies between the first and third conductive portions and has a different composition compared to the first, third, and fourth conductive portion. The third conductive portion lies between the second and fourth conductive portions and has a different composition compared to the first and fourth conductive portions.