Resumes
Resumes
Sol Schneider Phones & Addresses
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100 Arrowwood Ct, Red Bank, NJ 07701 (732) 741-7429
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Shrewsbury, NJ
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Little Silver, NJ
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Newton Falls, OH
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Toms River, NJ
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100 Secretariat Ct, Tinton Falls, NJ 07724 (732) 389-0453
Work
Position:
Professional/Technical
Education
Degree:
High school graduate or higher
Publications
Us Patents
Sharpening High Power Pulses
View pageUS Patent:
41550170, May 15, 1979
Filed:
Nov 9, 1977
Appl. No.:
5/849820
Inventors:
Gerhart K. Gaule - Elberon NJ
Sol Schneider - Little Silver NJ
Stephen Levy - Ocean NJ
Sol Schneider - Little Silver NJ
Stephen Levy - Ocean NJ
Assignee:
The United States of America as represented by the Secretary of the Army - Washington DC
International Classification:
H03K 512
H03K 508
H03K 604
H03K 508
H03K 604
US Classification:
307268
Abstract:
A metal oxide threshold switch (MOTS, e. g. , NbO. sub. x, x preferably fractally less than 2) series connected is used to sharpen the pulse rise to about one nanosecond, with a peak of thousands of volts, and up to 100 amperes or more. A trigger pulse is used to further sharpen the pulse and reduce jitter.
Sharpening High Power Pulses
View pageUS Patent:
41550161, May 15, 1979
Filed:
Nov 8, 1977
Appl. No.:
5/849565
Inventors:
Gerhart K. Gaule - Elberon NJ
Sol Schneider - Little Silver NJ
Stephen Levy - Ocean NJ
Paul R. Laplante - Falls Church VA
Sol Schneider - Little Silver NJ
Stephen Levy - Ocean NJ
Paul R. Laplante - Falls Church VA
Assignee:
The United States of America as represented by the Secretary of the Army - Washington DC
International Classification:
H03K 512
H03K 508
H03K 604
H03K 508
H03K 604
US Classification:
307268
Abstract:
A metal oxide threshold switch (MOTS, e. g. , NbOx, x preferably fractionally ess than 2) series connected is used to sharpen the pulse rise to about one or less nanosecond, with a peak up to several kilovolts, and up to 100 amperes or more.
Modulator And Clamper For Variable Impedance Load
View pageUS Patent:
40244300, May 17, 1977
Filed:
Sep 29, 1975
Appl. No.:
5/617881
Inventors:
Sol Schneider - Little Silver NJ
Assignee:
The United States of America as represented by the Secretary of the Army - Washington DC
International Classification:
H03K 508
US Classification:
315289
Abstract:
A transformerless Blumlein type circuit is combined with a novel clamper circuit for driving a cold cathode electron beam gun for a CO. sub. 2 laser where the E-beam gun has resistance essentially infinite at the leading end of a driving pulse and has several ohms resistance at the end of the driving pulse. At the leading end of a driving pulse the voltage output of the Blumlein circuit is twice the rated load voltage since the load as infinite impedance. The clamper circuit limits the pulse voltage across the load to its rated voltage and the excess power from the Blumlein circuit over that required by the load is dissipated in the clamper circuit. The clamper circuit as variable impedance that is approximately the inverse of the load impedance during a driving pulse so that the Blumlein circuit looks into an approximately constant impedance equal to its impedance.
On-Board Laser-Triggered Multi-Layer Semiconductor Power Switch
View pageUS Patent:
61544779, Nov 28, 2000
Filed:
May 12, 1998
Appl. No.:
9/076110
Inventors:
Douglas M. Weidenheimer - Brentwood CA
Sol Schneider - Red Bank NJ
Jeffry Golden - Laurel MD
Sol Schneider - Red Bank NJ
Jeffry Golden - Laurel MD
Assignee:
Berkeley Research Associates, Inc. - Berkeley CA
International Classification:
H01L 2974
H01S 330
H01S 500
H01S 330
H01S 500
US Classification:
372 50
Abstract:
A laser activated semiconductor switching device has a semiconductor structure housed in a semiconductor structure housing, and a laser array assembly directly connected to the semiconductor structure housing. The laser array assembly houses a plurality of laser diodes and diode control circuitry which energizes the laser diodes to emit light directly onto a surface of the semiconductor structure, which can be the cathode or anode surface, to cause the semiconductor structure to generate current carriers which enable passage of current through the semiconductor structure. The device can further include a second laser array assembly which is connected to the side of the semiconductor structure housing opposite to that on which the first laser array assembly is connected, and is configured to operate in a manner similar to the first laser array assembly. The surfaces of the semiconductor structure can be covered with metal layers having openings which permit the passage of the laser light into the semiconductor structure. The metal layers are reflective to the laser light and prevent the laser light that has passed into the semiconductor structure from exiting the structure to improve current carrier generation.