20140054755, Feb 27, 2014
Xinyu Zhang - Bristow VA,
Soichi Sugiura - Bristow VA,
Yu Zeng - Woodbridge VA,
MICRON TECHNOLOGY, INC. - Boise ID
257635, 438761, 438710, 257629, 257E29002, 257E2124, 257E21218
A method of forming a semiconductor device structure comprises forming at least one reflective structure comprising at least two dielectric materials having different refractive indices over at least one radiation-sensitive structure, the at least one reflective structure configured to substantially reflect therefrom radiation within a predetermined wavelength range and to substantially transmit therethrough radiation within a different predetermined wavelength range. Additional methods of forming a semiconductor device structure are described. Semiconductor device structures are also described.