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Sisira K Gamage

from Palo Alto, CA
Age ~57
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Also known as:
Sisira Kankanam Gamage, Sisira G Kankanam, Gamage Sisira Kankanam, Gamage Thoranage Kankanam, Sisira E
Phone and address:
3266 Maddux Dr, Palo Alto, CA 94303
Connected to:
Barry L Gamage, 58Chinthaka Gamage, 41Dilhani K Gamage, 53Ethan E Gamage, 48Indu R Gamage, 51Jennifer L Gamage, 44Kumudu J Gamage, 39Muditha P Gamage, 50Rachel R Gamage, 39Tharindu Gamage, 37

Sisira Gamage Phones & Addresses

  • 3266 Maddux Dr, Palo Alto, CA 94303
  • 2327 Sierra Ct, Palo Alto, CA 94303
  • 4200 Bay St, Fremont, CA 94538
  • 50 Meadowbrook Ln, Palmer, MA 01069
  • Norwood, MA
  • Hauppauge, NY
  • Melville, NY
  • Cincinnati, OH
  • Atlanta, GA
  • Santa Clara, CA
  • Bronx, NY

Publications

Us Patents

Method For Fabricating A Sensor

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US Patent:
7998777, Aug 16, 2011
Filed:
Dec 15, 2010
Appl. No.:
12/968346
Inventors:
Sisira Kankanam Gamage - Palo Alto CA, US
Naresh Venkata Mantravadi - San Jose CA, US
Assignee:
General Electric Company - Schenectady NY
International Classification:
H01L 21/00
G01L 9/00
US Classification:
438 53, 438 50, 438 51, 257419, 257E27006, 73715, 73721, 73727, 73754
Abstract:
A method for fabricating a sensor is disclosed that in one embodiment bonds a first device wafer to an etched second device wafer to create a suspended structure, the flexure of which is determined by an embedded sensing element that is in electrical communication with an outer surface of the sensor through an interconnect embedded in a device layer of the first device wafer. In one embodiment the suspended structure is enclosed by a cap and the sensor is configured to measure absolute pressure.

Sensor And Method For Fabricating The Same

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US Patent:
8435821, May 7, 2013
Filed:
Jun 18, 2010
Appl. No.:
12/818611
Inventors:
Sisira Kankanam Gamage - Palo Alto CA, US
Naresh Venkata Mantravadi - San Jose CA, US
Michael Klitzke - Nevada City CA, US
Terry Lee Cookson - Hayward CA, US
Assignee:
General Electric Company - Schenectady NY
International Classification:
H01L 21/00
US Classification:
438 53, 438456, 257E21536
Abstract:
A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched device wafer comprising a silicon on insulator wafer to create a suspended structure, the flexure of which is determined by an embedded sensing element to measure absolute pressure. Interconnect channels embedded in the sensor facilitate streamlined packaging of the device while accommodating interconnectivity with other devices.

Device For Measuring Environmental Forces And Method Of Fabricating The Same

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US Patent:
8511171, Aug 20, 2013
Filed:
May 23, 2011
Appl. No.:
13/113131
Inventors:
Sisira Kankanam Gamage - Palo Alto CA, US
Naresh Venkata Mantravadi - San Jose CA, US
Assignee:
General Electric Company - Schenectady NY
International Classification:
G01L 9/00
US Classification:
73754, 438 53
Abstract:
A device for measuring environmental forces, and a method for fabricating the same, is disclosed that comprises a device wafer, the device wafer comprising a first device layer separated from a second device layer by a first insulation layer. The first device wafer is bonded to an etched substrate wafer to create a suspended diaphragm and boss, the flexure of which is determined by an embedded sensing element.

Method For Fabricating A Microelectromechanical Sensor With A Piezoresistive Type Readout

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US Patent:
8569092, Oct 29, 2013
Filed:
Dec 28, 2009
Appl. No.:
12/647660
Inventors:
Naresh Venkata Mantravadi - San Jose CA, US
Sisira Kankanam Gamage - Fremont CA, US
Assignee:
General Electric Company - Schenectady NY
International Classification:
H01L 21/00
US Classification:
438 52, 438 48, 438 53, 257E21214
Abstract:
A method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched device wafer comprising a double silicon on insulator wafer to create a suspended structure, the flexure of which is sensed by an embedded piezoresistive sensor element. In one embodiment the sensor measures acceleration. In other embodiments the sensor measures pressure.

Sensor And Method For Fabricating The Same

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US Patent:
8569851, Oct 29, 2013
Filed:
Jun 18, 2010
Appl. No.:
12/818635
Inventors:
Sisira Kankanam Gamage - Palo Alto CA, US
Naresh Venkata Mantravadi - San Jose CA, US
Michael Klitzke - Nevada City CA, US
Terry Lee Cookson - Hayward CA, US
Assignee:
General Electric Company - Schenectady NY
International Classification:
H01L 29/84
US Classification:
257419, 257E21211, 257E29324, 438 53
Abstract:
A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched first device wafer comprising a silicon on insulator wafer which is then bonded to a second device wafer comprising a silicon on insulator wafer to create a vented, suspended structure, the flexure of which is sensed by an embedded sensing element to measure differential pressure. In one embodiment, interconnect channels embedded in the sensor facilitate streamlined packaging of the device while accommodating interconnectivity with other devices.

Pressure Sensors And Methods Of Making The Same

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US Patent:
20070052046, Mar 8, 2007
Filed:
Aug 24, 2005
Appl. No.:
11/210309
Inventors:
Stanley Chu - Cupertino CA, US
Sisira Gamage - Fremont CA, US
Hyon-Jin Kwon - Fremont CA, US
International Classification:
H01L 29/84
US Classification:
257415000
Abstract:
A pressure sensor includes a base substrate silicon fusion bonded to a cap substrate with a chamber disposed between the base substrate and the cap substrate. Each of the base substrate and the cap substrate include silicon. The base substrate includes walls defining a cavity and a diaphragm portion positioned over the cavity, wherein the cavity is open to an environment to be sensed. The chamber is hermetically sealed from the environment.

Component Assembly Using A Temporary Attach Material

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US Patent:
20130049232, Feb 28, 2013
Filed:
Aug 23, 2011
Appl. No.:
13/215393
Inventors:
Elizabeth Anne Logan - Danville CA, US
Terry Lee Marvin Cookson - Hayward CA, US
Sisira Kankanam Gamage - Palo Alto CA, US
Ronald Almy Hollis - Pleasant Grove UT, US
Assignee:
GENERAL ELECTRIC COMPANY - Schenectady NY
International Classification:
H01L 23/498
H01L 21/60
US Classification:
257783, 438118, 257E21506, 257E2306
Abstract:
A method of attaching a die to a carrier using a temporary attach material is disclosed. The method comprises attaching the temporary attach material between a surface of the die and a surface of the carrier. The temporary attach material attaches the die to the carrier. The method comprises bonding at least one connector to the die and the carrier. The connector includes a first end bonded to the carrier and a second end bonded to the die. The method further comprises encapsulating at least a portion of the die and at least a portion of the at least one connector by an encapsulation material.

Catheter Die And Method Of Fabricating The Same

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US Patent:
20130220972, Aug 29, 2013
Filed:
Feb 27, 2012
Appl. No.:
13/406395
Inventors:
Sisira Kankanam Gamage - Palo Alto CA, US
Assignee:
GENERAL ELECTRIC COMPANY - Schenectady NY
International Classification:
H05K 13/00
B29C 65/00
US Classification:
216 39, 156358, 156298
Abstract:
A catheter die is provided and includes a device layer defining a cavity and including a piezoresistive pressure sensor operably disposed proximate to the cavity and an insulator having an opening and being disposed on an upper surface of the device layer such that a portion of the piezoresistive pressure sensor is exposed through the opening. The catheter die further includes an insulation layer bonded to a lower surface of the device layer and first and second bond pads, the first bond pad being electrically coupled to the portion of the piezoresistive pressure sensor via the opening and the second bond pad being disposed on the insulation layer.
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Sisira K Gamage from Palo Alto, CA, age ~57 Get Report