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Simone Raoux

from New York, NY
Age ~63
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Also known as:
Simone Anders, Simone Andres
Phone and address:
312 11Th St, New York, NY 10001
(212) 643-1646
Related to:
Karlyn A Kurata, 33Cathryn L Pauley, 63Andre Anders, 63Stephanie D Kurata, 61Mark Anders, 37Mieko K AndersChristine K Anders, 67Sebastien Raoux, 57George T Kurata
Connected to:
Caroline L Raoux, 52Angelo J Rapa, 87Carl J Rapa, 62Carlos M Rapa, 44George F Rapa, 85James Rapa, 68John H Rapa, 65Joshua B Rapa, 41Karen D Rapa, 58Renato Rapa, 82

Simone Raoux Phones & Addresses

  • 312 11Th St, New York, NY 10001 (212) 643-1646
  • 316 11Th St, New York, NY 10001 (212) 643-1646
  • Santa Clara, CA
  • San Francisco, CA
  • Cupertino, CA
  • Albany, CA

Work

Company: Institute nanospectroscopy for energy material design and optimization Jan 2014 Position: Head of institute

Skills

Research • Computer Hardware

Industries

Computer Hardware

Resumes

Resumes

Simone Raoux Photo 1

Head Of Institute

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Location:
New York, NY
Industry:
Computer Hardware
Work:
Institute Nanospectroscopy For Energy Material Design and Optimization
Head of Institute
Skills:
Research
Computer Hardware

Publications

Us Patents

Indirect Switching And Sensing Of Phase Change Memory Cells

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US Patent:
7009694, Mar 7, 2006
Filed:
May 28, 2004
Appl. No.:
10/856547
Inventors:
Mark W. Hart - San Jose CA, US
Chung H. Lam - Peekskill NY, US
Christie R. K. Marrian - San Jose CA, US
Gary M. McClelland - Palo Alto CA, US
Simone Raoux - Cupertino CA, US
Charles T. Rettner - San Jose CA, US
Hemantha K. Wickramasinghe - San Jose CA, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G11C 11/00
US Classification:
356163, 365161, 438102
Abstract:
A method and structure for a memory cell comprising a phase change material; a heating element in thermal contact with the phase change material, wherein the heating element is adapted to induce a phase change in the phase change material; and electrical lines configured to pass current through the heating element, wherein the phase change material and the heating element are arranged in a configuration other than being electrically connected in series. The memory cell further comprises a sensing element in thermal contact with the phase change material, wherein the sensing element is adapted to detect a change in at least one physical property of the phase change material, wherein the sensing element is adapted to detect a change in a thermal conductivity of the phase change material.

Method And Structure For High Performance Phase Change Memory

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US Patent:
7221579, May 22, 2007
Filed:
Jun 13, 2005
Appl. No.:
11/150188
Inventors:
Lia Krusin-Elbaum - Dobbs Ferry NY, US
Rudolf Ludeke - Millwood NY, US
Dennis M. Newns - Yorktown Heights NY, US
Simone Raoux - Santa Clara CA, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G11C 13/04
US Classification:
365148, 365157, 365158
Abstract:
A method (and structure) for a memory cell having a phase change material (PCM) element and a heating element external to the PCM element. The heating element causes one of a presence of and an absence of a phase boundary within the PCM element for storing information in the PCM element.

Phase-Change Memory Cell And Method Of Fabricating The Phase-Change Memory Cell

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US Patent:
7459266, Dec 2, 2008
Filed:
Jun 13, 2005
Appl. No.:
11/150184
Inventors:
Jonathan Zanhong Sun - Shrub Oak NY, US
Simone Raoux - Santa Clara CA, US
Hemantha Wichramasinghe - San Jose CA, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/71
US Classification:
430319, 438694
Abstract:
A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer in the first opening, and an electrically conductive layer including a first portion formed on the stencil layer and defining a second electrode layer and a second portion formed on the phase-change material layer.

Structure For Confining The Switching Current In Phase Memory (Pcm) Cells

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US Patent:
7488967, Feb 10, 2009
Filed:
Apr 6, 2005
Appl. No.:
11/100312
Inventors:
Geoffrey W. Burr - Cupertino CA, US
Chung Hon Lam - Peekskill NY, US
Simone Raoux - Santa Clara CA, US
Stephen M. Rossnagel - Pleasantville NY, US
Alejandro G. Schrott - New York NY, US
Jonathan Z. Sun - Shrub Oak NY, US
Hemantha K. Wickramasinghe - San Jose CA, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 29/02
US Classification:
257 2, 257 3, 257 4
Abstract:
Disclosed are a phase change memory cell and a method of forming the memory cell. The memory cell comprises a main body of phase change material connected directly to a bottom contact and via a narrow channel of phase change material to a top contact. The channel is tapered from the top contact towards the main body. A minimum width of the channel has a less than minimum lithographic dimension and is narrower than a width of the main body. Therefore, the channel provides a confined region for the switching current path and restricts phase changing to within the channel. In addition an embodiment of the memory cell isolates the main body of phase change material by providing a space between the phase change material and the cell walls. The space allows the phase change material to expand and contract and also limits heat dissipation.

Phase Change Materials For Applications That Require Fast Switching And High Endurance

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US Patent:
7491573, Feb 17, 2009
Filed:
Mar 13, 2008
Appl. No.:
12/047459
Inventors:
Alejandro G Schrott - New York NY, US
Chung H Lam - Peekskill NY, US
Simone Raoux - Santa Clara CA, US
Chieh-Fang Chen - Tarrytown NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/336
US Classification:
438 95, 438102, 438103, 438257, 438604, 438FOR 256, 438FOR 267, 438FOR 292, 438FOR 344, 257E21662, 257E21679, 257E27104, 257E31029
Abstract:
A memory device utilizing a phase change material as the storage medium, the phase change material based on antimony as the solvent in a solid solution.

Solution-Based Deposition Process For Metal Chalcogenides

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US Patent:
7494841, Feb 24, 2009
Filed:
May 12, 2006
Appl. No.:
11/432484
Inventors:
David B. Mitzi - Mahopac NY, US
Simone Raoux - Santa Clara CA, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/00
US Classification:
438 95, 438102, 438104, 438502, 257 42, 257E21068, 257E21633
Abstract:
A solution of a hydrazine-based precursor of a metal chalcogenide is prepared by adding an elemental metal and an elemental chalcogen to a hydrazine compound. The precursor solution can be used to form a film. The precursor solutions can be used in preparing field-effect transistors, photovoltaic devices and phase-change memory devices.

Phase Change Materials And Associated Memory Devices

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US Patent:
7501648, Mar 10, 2009
Filed:
Aug 16, 2006
Appl. No.:
11/465077
Inventors:
Yi-Chou Chen - San Jose CA, US
Frances Anne Houle - Fremont CA, US
Simone Raoux - Santa Clara CA, US
Charles Thomas Rettner - San Jose CA, US
Alejandro Gabriel Schrott - New York NY, US
Assignee:
International Business Machines Corporation - Armonk NY
Macronix International Co., Ltd. - Hsinchu
International Classification:
H01L 47/00
US Classification:
257 3, 257 4
Abstract:
A memory device utilizes a phase change material as the storage medium. The phase change material includes at least one of Ge, Sb, Te, Se, As, and S, as well as a nitride compound as a dopant. The memory device can be a solid-state memory cell with electrodes in electrical communication with the phase change medium, an optical phase change storage device in which data is read and written optically, or a storage device based on the principle of scanning probe microscopy.

Current Constricting Phase Change Memory Element Structure

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US Patent:
7745807, Jun 29, 2010
Filed:
Jul 11, 2007
Appl. No.:
11/776301
Inventors:
Chieh-Fang Chen - Banciao, TW
Shih Hung Chen - Jhudong Township, TW
Yi-Chou Chen - Hsinchu, TW
Thomas Happ - Tarrytown NY, US
Chia Hua Ho - Kaohsiung, TW
Ming-Hsiang Hsueh - Hsinchu, TW
Chung Hon Lam - Peekskill NY, US
Hsiang-Lan Lung - Hsinchu, TW
Jan Boris Philipp - Peekskill NY, US
Simone Raoux - Santa Clara CA, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 29/02
US Classification:
257 2, 257 3, 257 4, 257 5, 257E29002, 438102, 438103, 365163
Abstract:
A layer of nanoparticles having a dimension on the order of 10 nm is employed to form a current constricting layer or as a hardmask for forming a current constricting layer from an underlying insulator layer. The nanoparticles are preferably self-aligning and/or self-planarizing on the underlying surface. The current constricting layer may be formed within a bottom conductive plate, within a phase change material layer, within a top conductive plate, or within a tapered liner between a tapered via sidewall and a via plug contains either a phase change material or a top conductive material. The current density of the local structure around the current constricting layer is higher than the surrounding area, thus allowing local temperature to rise higher than surrounding material. The total current required to program the phase change memory device, and consequently the size of a programming transistor, is reduced due to the current constricting layer.
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Simone Raoux from New York, NY, age ~63 Get Report